JPS62128529A - パタ−ン形成方法 - Google Patents
パタ−ン形成方法Info
- Publication number
- JPS62128529A JPS62128529A JP60269138A JP26913885A JPS62128529A JP S62128529 A JPS62128529 A JP S62128529A JP 60269138 A JP60269138 A JP 60269138A JP 26913885 A JP26913885 A JP 26913885A JP S62128529 A JPS62128529 A JP S62128529A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- nozzle
- liquid
- pure water
- perchloric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000005530 etching Methods 0.000 claims abstract description 49
- 239000000243 solution Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 20
- 150000003839 salts Chemical class 0.000 claims abstract description 17
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 9
- 239000011651 chromium Substances 0.000 claims abstract description 9
- 239000002253 acid Substances 0.000 claims abstract description 8
- 239000007921 spray Substances 0.000 claims abstract description 3
- 239000003929 acidic solution Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 abstract description 22
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 14
- 230000002378 acidificating effect Effects 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 9
- 239000007864 aqueous solution Substances 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 5
- DVARTQFDIMZBAA-UHFFFAOYSA-O ammonium nitrate Chemical compound [NH4+].[O-][N+]([O-])=O DVARTQFDIMZBAA-UHFFFAOYSA-O 0.000 abstract 1
- 239000010408 film Substances 0.000 description 9
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 8
- 239000000203 mixture Substances 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- -1 nitride carbides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60269138A JPS62128529A (ja) | 1985-11-29 | 1985-11-29 | パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60269138A JPS62128529A (ja) | 1985-11-29 | 1985-11-29 | パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62128529A true JPS62128529A (ja) | 1987-06-10 |
| JPH0416012B2 JPH0416012B2 (enrdf_load_stackoverflow) | 1992-03-19 |
Family
ID=17468217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60269138A Granted JPS62128529A (ja) | 1985-11-29 | 1985-11-29 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62128529A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04310705A (ja) * | 1991-04-10 | 1992-11-02 | Masao Moriyama | プラスチックペレットの製造装置 |
| JP2001209166A (ja) * | 2000-01-26 | 2001-08-03 | Dainippon Printing Co Ltd | フォトマスク製造用スピン処理装置 |
| JP2018205355A (ja) * | 2017-05-30 | 2018-12-27 | 株式会社エスケーエレクトロニクス | フォトマスクのウェットエッチング方法及びウェットエッチング装置 |
-
1985
- 1985-11-29 JP JP60269138A patent/JPS62128529A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04310705A (ja) * | 1991-04-10 | 1992-11-02 | Masao Moriyama | プラスチックペレットの製造装置 |
| JP2001209166A (ja) * | 2000-01-26 | 2001-08-03 | Dainippon Printing Co Ltd | フォトマスク製造用スピン処理装置 |
| JP2018205355A (ja) * | 2017-05-30 | 2018-12-27 | 株式会社エスケーエレクトロニクス | フォトマスクのウェットエッチング方法及びウェットエッチング装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0416012B2 (enrdf_load_stackoverflow) | 1992-03-19 |
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