JPH0416011B2 - - Google Patents

Info

Publication number
JPH0416011B2
JPH0416011B2 JP59233453A JP23345384A JPH0416011B2 JP H0416011 B2 JPH0416011 B2 JP H0416011B2 JP 59233453 A JP59233453 A JP 59233453A JP 23345384 A JP23345384 A JP 23345384A JP H0416011 B2 JPH0416011 B2 JP H0416011B2
Authority
JP
Japan
Prior art keywords
etching
oxide film
etching solution
contact
contact hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59233453A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61111544A (ja
Inventor
Akinori Shimizu
Misao Saga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP23345384A priority Critical patent/JPS61111544A/ja
Publication of JPS61111544A publication Critical patent/JPS61111544A/ja
Publication of JPH0416011B2 publication Critical patent/JPH0416011B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP23345384A 1984-11-06 1984-11-06 エツチング方法 Granted JPS61111544A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23345384A JPS61111544A (ja) 1984-11-06 1984-11-06 エツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23345384A JPS61111544A (ja) 1984-11-06 1984-11-06 エツチング方法

Publications (2)

Publication Number Publication Date
JPS61111544A JPS61111544A (ja) 1986-05-29
JPH0416011B2 true JPH0416011B2 (enrdf_load_stackoverflow) 1992-03-19

Family

ID=16955272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23345384A Granted JPS61111544A (ja) 1984-11-06 1984-11-06 エツチング方法

Country Status (1)

Country Link
JP (1) JPS61111544A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6159980B2 (ja) 2013-04-19 2017-07-12 株式会社Ｊｏｌｅｄ 酸化アルミニウム膜用のエッチング液と、当該エッチング液を用いた薄膜半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956482A (ja) * 1982-08-30 1984-03-31 Daikin Ind Ltd エツチング剤組成物

Also Published As

Publication number Publication date
JPS61111544A (ja) 1986-05-29

Similar Documents

Publication Publication Date Title
JPH04290232A (ja) 溝埋込み配線形成方法
JP2720796B2 (ja) 半導体装置の製造方法
US7037822B2 (en) Method of forming metal line in semiconductor device
JP2004023031A (ja) 半導体装置およびその製造方法
US20030087514A1 (en) Hard mask damascene process used to form a semiconductor device
US6319844B1 (en) Method of manufacturing semiconductor device with via holes reaching interconnect layers having different top-surface widths
JPH0416011B2 (enrdf_load_stackoverflow)
JPS6255694B2 (enrdf_load_stackoverflow)
JPH01212451A (ja) 半導体装置の製法
JP2888213B2 (ja) 半導体装置の製造方法
JP2001308179A (ja) 半導体装置の製造方法
KR100278995B1 (ko) 반도체장치의 비어홀 형성방법
KR20030055802A (ko) 듀얼 다마신 공정을 이용한 반도체 소자의 제조방법
JPH0766178A (ja) 半導体装置の製造方法
JP2678049B2 (ja) 半導体装置の洗浄方法
JP2003017436A (ja) 半導体装置の製造方法
JPH02134818A (ja) 配線構造体の形成法
JP3295172B2 (ja) ドライエッチング方法及び半導体装置の製造方法
JP2712450B2 (ja) 半導体装置の製造方法
KR100468694B1 (ko) 반도체장치의콘택형성방법
JPS58155A (ja) 半導体装置の製造方法
JPH03131032A (ja) 半導体装置およびその製造方法
JPH05226278A (ja) 半導体装置の製造方法
JPS61289648A (ja) 半導体装置の製造方法
JPH06260456A (ja) 多層配線構造の製造方法