JPH0415616B2 - - Google Patents

Info

Publication number
JPH0415616B2
JPH0415616B2 JP57067713A JP6771382A JPH0415616B2 JP H0415616 B2 JPH0415616 B2 JP H0415616B2 JP 57067713 A JP57067713 A JP 57067713A JP 6771382 A JP6771382 A JP 6771382A JP H0415616 B2 JPH0415616 B2 JP H0415616B2
Authority
JP
Japan
Prior art keywords
etching
tartaric acid
aqueous solution
hydrogen peroxide
etchant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57067713A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58182832A (ja
Inventor
Kazuo Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6771382A priority Critical patent/JPS58182832A/ja
Publication of JPS58182832A publication Critical patent/JPS58182832A/ja
Publication of JPH0415616B2 publication Critical patent/JPH0415616B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP6771382A 1982-04-20 1982-04-20 ＧａＡｓ基板のエツチング方法 Granted JPS58182832A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6771382A JPS58182832A (ja) 1982-04-20 1982-04-20 ＧａＡｓ基板のエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6771382A JPS58182832A (ja) 1982-04-20 1982-04-20 ＧａＡｓ基板のエツチング方法

Publications (2)

Publication Number Publication Date
JPS58182832A JPS58182832A (ja) 1983-10-25
JPH0415616B2 true JPH0415616B2 (enrdf_load_stackoverflow) 1992-03-18

Family

ID=13352870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6771382A Granted JPS58182832A (ja) 1982-04-20 1982-04-20 ＧａＡｓ基板のエツチング方法

Country Status (1)

Country Link
JP (1) JPS58182832A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100626382B1 (ko) 2004-08-03 2006-09-20 삼성전자주식회사 식각 용액 및 이를 이용한 자기 기억 소자의 형성 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5171236A (ja) * 1974-12-18 1976-06-19 Mitsubishi Electric Corp Etsuchingueki

Also Published As

Publication number Publication date
JPS58182832A (ja) 1983-10-25

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