JPS6359268B2 - - Google Patents

Info

Publication number
JPS6359268B2
JPS6359268B2 JP57233818A JP23381882A JPS6359268B2 JP S6359268 B2 JPS6359268 B2 JP S6359268B2 JP 57233818 A JP57233818 A JP 57233818A JP 23381882 A JP23381882 A JP 23381882A JP S6359268 B2 JPS6359268 B2 JP S6359268B2
Authority
JP
Japan
Prior art keywords
type
semiconductor layer
layer
gaas
graded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57233818A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59124771A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57233818A priority Critical patent/JPS59124771A/ja
Publication of JPS59124771A publication Critical patent/JPS59124771A/ja
Publication of JPS6359268B2 publication Critical patent/JPS6359268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57233818A 1982-12-30 1982-12-30 化合物半導体装置 Granted JPS59124771A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57233818A JPS59124771A (ja) 1982-12-30 1982-12-30 化合物半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57233818A JPS59124771A (ja) 1982-12-30 1982-12-30 化合物半導体装置

Publications (2)

Publication Number Publication Date
JPS59124771A JPS59124771A (ja) 1984-07-18
JPS6359268B2 true JPS6359268B2 (enrdf_load_stackoverflow) 1988-11-18

Family

ID=16961046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57233818A Granted JPS59124771A (ja) 1982-12-30 1982-12-30 化合物半導体装置

Country Status (1)

Country Link
JP (1) JPS59124771A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745448A (en) * 1985-12-24 1988-05-17 Raytheon Company Semiconductor devices having compensated buffer layers
JPH0787246B2 (ja) * 1987-08-20 1995-09-20 富士通株式会社 半導体装置
JPH01107578A (ja) * 1987-09-25 1989-04-25 Siemens Ag 高電子移動度電界効果トランジスタ
JPH01199475A (ja) * 1988-02-03 1989-08-10 Sanyo Electric Co Ltd ヘテロ接合電界効果トランジスタ
JP2005191449A (ja) * 2003-12-26 2005-07-14 Matsushita Electric Ind Co Ltd 電界効果トランジスタ

Also Published As

Publication number Publication date
JPS59124771A (ja) 1984-07-18

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