USRE36185E - Method of fabricating Group III-V compound semiconductor devices using selective etching - Google Patents
Method of fabricating Group III-V compound semiconductor devices using selective etching Download PDFInfo
- Publication number
- USRE36185E USRE36185E US08/751,776 US75177696A USRE36185E US RE36185 E USRE36185 E US RE36185E US 75177696 A US75177696 A US 75177696A US RE36185 E USRE36185 E US RE36185E
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- United States
- Prior art keywords
- citric acid
- moles
- liter
- concentration
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000005530 etching Methods 0.000 title claims description 30
- 239000004065 semiconductor Substances 0.000 title claims description 21
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 114
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 27
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 20
- 150000003839 salts Chemical class 0.000 claims abstract description 18
- 239000001508 potassium citrate Substances 0.000 claims abstract description 9
- 229960002635 potassium citrate Drugs 0.000 claims abstract description 9
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 claims abstract description 9
- 235000011082 potassium citrates Nutrition 0.000 claims abstract description 9
- 239000000243 solution Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 21
- 239000007979 citrate buffer Substances 0.000 claims description 16
- 230000005669 field effect Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 3
- 229920006395 saturated elastomer Polymers 0.000 abstract description 5
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 23
- 235000012431 wafers Nutrition 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 5
- 239000000872 buffer Substances 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- 241000288724 Talpa europaea Species 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- -1 i.e. Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/751,776 USRE36185E (en) | 1993-03-25 | 1996-12-05 | Method of fabricating Group III-V compound semiconductor devices using selective etching |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/037,074 US5374328A (en) | 1993-03-25 | 1993-03-25 | Method of fabricating group III-V compound |
US08/751,776 USRE36185E (en) | 1993-03-25 | 1996-12-05 | Method of fabricating Group III-V compound semiconductor devices using selective etching |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/037,074 Reissue US5374328A (en) | 1993-03-25 | 1993-03-25 | Method of fabricating group III-V compound |
Publications (1)
Publication Number | Publication Date |
---|---|
USRE36185E true USRE36185E (en) | 1999-04-06 |
Family
ID=21892303
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/037,074 Ceased US5374328A (en) | 1993-03-25 | 1993-03-25 | Method of fabricating group III-V compound |
US08/751,776 Expired - Fee Related USRE36185E (en) | 1993-03-25 | 1996-12-05 | Method of fabricating Group III-V compound semiconductor devices using selective etching |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/037,074 Ceased US5374328A (en) | 1993-03-25 | 1993-03-25 | Method of fabricating group III-V compound |
Country Status (6)
Country | Link |
---|---|
US (2) | US5374328A (en) |
EP (1) | EP0642425A4 (en) |
JP (1) | JP2871857B2 (en) |
KR (1) | KR950701582A (en) |
IL (1) | IL108762A (en) |
WO (1) | WO1994021474A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060281327A1 (en) * | 2003-01-23 | 2006-12-14 | Yoshifumi Sato | Semiconductor laser element and method of fabrication thereof |
US20070091956A1 (en) * | 2003-01-23 | 2007-04-26 | Yoshifumi Sato | Semiconductor laser element and method of fabrication thereof |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5405606A (en) * | 1993-12-03 | 1995-04-11 | Efh, Inc. | Embalming composition and method |
US5639343A (en) * | 1995-12-13 | 1997-06-17 | Watkins-Johnson Company | Method of characterizing group III-V epitaxial semiconductor wafers incorporating an etch stop layer |
US5700383A (en) * | 1995-12-21 | 1997-12-23 | Intel Corporation | Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide |
US5652179A (en) * | 1996-04-24 | 1997-07-29 | Watkins-Johnson Company | Method of fabricating sub-micron gate electrode by angle and direct evaporation |
JP3097557B2 (en) * | 1996-05-20 | 2000-10-10 | 日本電気株式会社 | Method for manufacturing semiconductor device |
US6060402A (en) * | 1998-07-23 | 2000-05-09 | The Whitaker Corporation | Process for selective recess etching of epitaxial field effect transistors with a novel etch-stop layer |
US6524899B1 (en) * | 2000-09-21 | 2003-02-25 | Trw Inc. | Process for forming a large area, high gate current HEMT diode |
KR100567346B1 (en) * | 2004-03-23 | 2006-04-04 | 학교법인 포항공과대학교 | Etchant for wet etching AlGaAs epitaxial layer and method for manufacturing semiconductor device using the etchant |
CN109545681A (en) * | 2018-10-31 | 2019-03-29 | 中国科学院西安光学精密机械研究所 | A kind of caustic solution of the complete ultrafast detection chip of light solid |
US11437250B2 (en) * | 2018-11-15 | 2022-09-06 | Tokyo Electron Limited | Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions |
US10982335B2 (en) * | 2018-11-15 | 2021-04-20 | Tokyo Electron Limited | Wet atomic layer etching using self-limiting and solubility-limited reactions |
US11915941B2 (en) | 2021-02-11 | 2024-02-27 | Tokyo Electron Limited | Dynamically adjusted purge timing in wet atomic layer etching |
US11802342B2 (en) | 2021-10-19 | 2023-10-31 | Tokyo Electron Limited | Methods for wet atomic layer etching of ruthenium |
US11866831B2 (en) | 2021-11-09 | 2024-01-09 | Tokyo Electron Limited | Methods for wet atomic layer etching of copper |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0095302A1 (en) * | 1982-05-28 | 1983-11-30 | Smithkline Diagnostics, Inc. | Improved specimen slide for occult blood testing |
US4486536A (en) * | 1982-05-28 | 1984-12-04 | Smithkline Diagnostics, Inc. | Specimen slide for occult blood testing |
EP0292057A1 (en) * | 1987-05-18 | 1988-11-23 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor comprising a titanium-tungsten layer |
US4835101A (en) * | 1986-02-10 | 1989-05-30 | Kallestad Diagnostics, Inc. | Luminescent analyses with enhanced storage stability |
EP0323220A2 (en) * | 1987-12-25 | 1989-07-05 | Mitsubishi Kasei Corporation | Hetero junction field effect transistor device |
US4914488A (en) * | 1987-06-11 | 1990-04-03 | Hitachi, Ltd. | Compound semiconductor structure and process for making same |
US4935377A (en) * | 1989-08-01 | 1990-06-19 | Watkins Johnson Company | Method of fabricating microwave FET having gate with submicron length |
US5041393A (en) * | 1988-12-28 | 1991-08-20 | At&T Bell Laboratories | Fabrication of GaAs integrated circuits |
US5110765A (en) * | 1990-11-30 | 1992-05-05 | At&T Bell Laboratories | Selective etch for GaAs-containing group III-V compounds |
US5215885A (en) * | 1990-10-23 | 1993-06-01 | Beckman Instruments, Inc. | Stable two-part chromogen substrate |
EP0617458A2 (en) * | 1993-03-19 | 1994-09-28 | Mitsubishi Denki Kabushiki Kaisha | Etching solution and etching method for semiconductor therefor |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5436185A (en) * | 1977-08-26 | 1979-03-16 | Toshiba Corp | Etching method of gaas system compound semiconductor crystal |
JPS6242532A (en) * | 1985-08-20 | 1987-02-24 | Matsushita Electric Ind Co Ltd | Surface treating method of compound semiconductor |
JPH02206117A (en) * | 1989-02-06 | 1990-08-15 | Yokogawa Electric Corp | Manufacture of semiconductor device |
JPH03160733A (en) * | 1989-11-17 | 1991-07-10 | Sanyo Electric Co Ltd | Epitaxial wafer |
JPH04105319A (en) * | 1990-08-24 | 1992-04-07 | Sony Corp | Selective etching method |
-
1993
- 1993-03-25 US US08/037,074 patent/US5374328A/en not_active Ceased
-
1994
- 1994-02-24 IL IL10876294A patent/IL108762A/en not_active IP Right Cessation
- 1994-03-03 WO PCT/US1994/002328 patent/WO1994021474A1/en not_active Application Discontinuation
- 1994-03-03 KR KR1019940704223A patent/KR950701582A/en not_active Application Discontinuation
- 1994-03-03 JP JP6521065A patent/JP2871857B2/en not_active Expired - Lifetime
- 1994-03-03 EP EP94910829A patent/EP0642425A4/en not_active Withdrawn
-
1996
- 1996-12-05 US US08/751,776 patent/USRE36185E/en not_active Expired - Fee Related
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0095302A1 (en) * | 1982-05-28 | 1983-11-30 | Smithkline Diagnostics, Inc. | Improved specimen slide for occult blood testing |
US4486536A (en) * | 1982-05-28 | 1984-12-04 | Smithkline Diagnostics, Inc. | Specimen slide for occult blood testing |
US4835101A (en) * | 1986-02-10 | 1989-05-30 | Kallestad Diagnostics, Inc. | Luminescent analyses with enhanced storage stability |
EP0292057A1 (en) * | 1987-05-18 | 1988-11-23 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor comprising a titanium-tungsten layer |
US4914488A (en) * | 1987-06-11 | 1990-04-03 | Hitachi, Ltd. | Compound semiconductor structure and process for making same |
EP0323220A2 (en) * | 1987-12-25 | 1989-07-05 | Mitsubishi Kasei Corporation | Hetero junction field effect transistor device |
US5041393A (en) * | 1988-12-28 | 1991-08-20 | At&T Bell Laboratories | Fabrication of GaAs integrated circuits |
US4935377A (en) * | 1989-08-01 | 1990-06-19 | Watkins Johnson Company | Method of fabricating microwave FET having gate with submicron length |
US5215885A (en) * | 1990-10-23 | 1993-06-01 | Beckman Instruments, Inc. | Stable two-part chromogen substrate |
US5110765A (en) * | 1990-11-30 | 1992-05-05 | At&T Bell Laboratories | Selective etch for GaAs-containing group III-V compounds |
EP0617458A2 (en) * | 1993-03-19 | 1994-09-28 | Mitsubishi Denki Kabushiki Kaisha | Etching solution and etching method for semiconductor therefor |
Non-Patent Citations (38)
Title |
---|
"A comparative study of wet and dry selective etching processes for GaAs/AlGaAs/InGaAs pseudomorphic MODFETs"; M. Tong et al.; J. Elec. Mat. 21 (1992); p. 9. |
"AlAs etch-stop layers for InGaAlAs/InP heterostructure devices and circuits"; T.P.E. Broekaert et al.; IEEE Trans. Elec. Dev. 39, (1992); p. 533. |
"An edge-defined technique for fabricating submicron metal-semiconductor field effect transistor gates"; W.A. Strifler et al.; J. Vac. Sci. Technol. B8(6), Nov./Dec. 1990; pp. 1297-1299. |
"An edge-defined technique for fabricating submicron metal-semiconductor field effect transistor gates"; W.A. Strifler et al.; J. Vac.Sci. Tech B8 (1990); p. 1297. |
"Damage studies of dry etched GaAs recessed gates for field effect transistors"; S. Saliman et al.; J.Vac.Sci. Tech B9 (1991); p. 114. |
"Dry etch induced damage in GaAs investigated using Raman scattering spectroscopy"; D.G. Lishan et al.; J.Vac.Sci.Tech B7(3), May/Jun. 1989; p. 556. |
"Electron concentration and mobility loss in GaAs/GaAlAs heterostructures caused by reactive ion etching"; W. Beinstingl et al.; Appl. Phy. Lett 57, (1990); pp. 177-179. |
"GaAs/AlGaAs HEMTs with sub 0.5 micron gatelength written by E-beam and recessed by dry-etching for direct-coupled FET logic (DCFL)"; A. Hulsmann et al.; Proc. Int. Symp on GaAs and Related Compounds, Jersey (1990); pp. 429-434. |
"Preferential etching of GaAs through photoresist masks"; M. Otsubo et al.; J. Electro. Chem Soc. 123,676 (1976); pp. 676-680. |
"Reactive ion etching damage to GaAs layers with etch stops"; C.M. Knoedler et al.; J. Vac. Sci. Technol B6, (1988); pp. 1573-1576. |
"Selective etching of GaAs and Al0.30 Ga0.70 as with citric/acit/hydrogen peroxide solutions"; C. Juang et al.; J. Vac.Sci Tech B8 (1990); pp. 1122-1124. |
"Selective etching of GaAs and AlGaAs"; C.M. Chang et al.; MRI Bull. Res. Dev. 4 (1990); pp. 95-99. |
"Selective reactive ion etching for short-gate-length GaAs/AlGaAs/InGaAs pseudomorphic modulation-doped field effect transistors"; A.A. Ketterson et al.; J. Vac.Sci. Tech. B7, (1989). pp. 1493-1496. |
"The role of aluminum in selective reactive ion etching of GaAs on AIGaAsa) "; K.L. Seaward et al.; J. Vac Sci. Tech. B6 (6), Nov./Dec. 1988; pp. 1645-1649. |
"Use of thin AlGaAs and InGaAs stop-etch layers for reactive ion etch processing of III-V compound semiconductor devices"; C.B. Cooper III et al.; Appl. Phy. Let 51. (1987); pp. 2225-2226. |
A comparative study of wet and dry selective etching processes for GaAs/AlGaAs/InGaAs pseudomorphic MODFETs ; M. Tong et al.; J. Elec. Mat. 21 (1992); p. 9. * |
AlAs etch stop layers for InGaAlAs/InP heterostructure devices and circuits ; T.P.E. Broekaert et al.; IEEE Trans. Elec. Dev. 39, (1992); p. 533. * |
An edge defined technique for fabricating submicron metal semiconductor field effect transistor gates ; W.A. Strifler et al.; J. Vac. Sci. Technol. B8(6), Nov./Dec. 1990; pp. 1297 1299. * |
An edge defined technique for fabricating submicron metal semiconductor field effect transistor gates ; W.A. Strifler et al.; J. Vac.Sci. Tech B8 (1990); p. 1297. * |
Broekaert, Tom P.E., et al., "Novel, Organic Acid-Based Etchants for InGaAlAs/InP Heterostructure Devices with AlAs Etch-Stop Layers", J. Electrochem. Soc., vol. 139, No. 3, Mar. 1992, pp. 2306-2309. |
Broekaert, Tom P.E., et al., Novel, Organic Acid Based Etchants for InGaAlAs/InP Heterostructure Devices with AlAs Etch Stop Layers , J. Electrochem. Soc., vol. 139, No. 3, Mar. 1992, pp. 2306 2309. * |
Damage studies of dry etched GaAs recessed gates for field effect transistors ; S. Saliman et al.; J.Vac.Sci. Tech B9 (1991); p. 114. * |
De Salvo, Tsens, Comas, "Etch rates and selectivities of Citricacid/hydrogen peroxide on GaAs, AlGaAs, InGaAs (In0.2 Ga0.8 As), (In0.53 Ga0.47 As); (In0.52 Al0.48 As) and Indium Phosphid". J. Electrochem, Soc., 139(3), 831-5. 76-3. (Electric Phenomena.). |
De Salvo, Tsens, Comas, Etch rates and selectivities of Citricacid/hydrogen peroxide on GaAs, AlGaAs, InGaAs (In 0.2 Ga 0.8 As), (In 0.53 Ga 0.47 As); (In 0.52 Al 0.48 As) and Indium Phosphid . J. Electrochem, Soc., 139(3), 831 5. 76 3. (Electric Phenomena.). * |
DeSalvo, Gregory C., et al., "Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs, Al0.3 Ga0.7 As, In0.2 Ga0.8 As, In0.53 Ga0.47 As, In0.52 Al0.48 As, and InP", J. Electrochem. Soc., vol. 139, No. 3, Mar. 1992, pp. 831-835. |
DeSalvo, Gregory C., et al., Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs, Al 0.3 Ga 0.7 As, In 0.2 Ga 0.8 As, In 0.53 Ga 0.47 As, In 0.52 Al 0.48 As, and InP , J. Electrochem. Soc., vol. 139, No. 3, Mar. 1992, pp. 831 835. * |
Dry etch induced damage in GaAs investigated using Raman scattering spectroscopy ; D.G. Lishan et al.; J.Vac.Sci.Tech B7(3), May/Jun. 1989; p. 556. * |
Electron concentration and mobility loss in GaAs/GaAlAs heterostructures caused by reactive ion etching ; W. Beinstingl et al.; Appl. Phy. Lett 57, (1990); pp. 177 179. * |
GaAs/AlGaAs HEMTs with sub 0.5 micron gatelength written by E beam and recessed by dry etching for direct coupled FET logic (DCFL) ; A. Hulsmann et al.; Proc. Int. Symp on GaAs and Related Compounds, Jersey (1990); pp. 429 434. * |
Preferential etching of GaAs through photoresist masks ; M. Otsubo et al.; J. Electro. Chem Soc. 123,676 (1976); pp. 676 680. * |
Reactive ion etching damage to GaAs layers with etch stops ; C.M. Knoedler et al.; J. Vac. Sci. Technol B6, (1988); pp. 1573 1576. * |
Selective etching of GaAs and Al 0.30 Ga 0.70 as with citric/acit/hydrogen peroxide solutions ; C. Juang et al.; J. Vac.Sci Tech B8 (1990); pp. 1122 1124. * |
Selective etching of GaAs and AlGaAs ; C.M. Chang et al.; MRI Bull. Res. Dev. 4 (1990); pp. 95 99. * |
Selective reactive ion etching for short gate length GaAs/AlGaAs/InGaAs pseudomorphic modulation doped field effect transistors ; A.A. Ketterson et al.; J. Vac.Sci. Tech. B7, (1989). pp. 1493 1496. * |
The role of aluminum in selective reactive ion etching of GaAs on AIGaAs a) ; K.L. Seaward et al.; J. Vac Sci. Tech. B6 (6), Nov./Dec. 1988; pp. 1645 1649. * |
Tong, M., et al., "Process for Enhancement/Depletion-Mode GaAs/InGaAs/AlGaAs Pseudomorphic MODFETs Using Selective Wet Gate Recessing", J. Electrochem. Soc., vol. 139, No. 3, Mar. 1992, pp. 1633-1634. |
Tong, M., et al., Process for Enhancement/Depletion Mode GaAs/InGaAs/AlGaAs Pseudomorphic MODFETs Using Selective Wet Gate Recessing , J. Electrochem. Soc., vol. 139, No. 3, Mar. 1992, pp. 1633 1634. * |
Use of thin AlGaAs and InGaAs stop etch layers for reactive ion etch processing of III V compound semiconductor devices ; C.B. Cooper III et al.; Appl. Phy. Let 51. (1987); pp. 2225 2226. * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060281327A1 (en) * | 2003-01-23 | 2006-12-14 | Yoshifumi Sato | Semiconductor laser element and method of fabrication thereof |
US20070091956A1 (en) * | 2003-01-23 | 2007-04-26 | Yoshifumi Sato | Semiconductor laser element and method of fabrication thereof |
US7736922B2 (en) * | 2003-01-23 | 2010-06-15 | Sony Corporation | Semiconductor laser element and method of fabrication thereof |
Also Published As
Publication number | Publication date |
---|---|
EP0642425A4 (en) | 1996-11-06 |
WO1994021474A1 (en) | 1994-09-29 |
EP0642425A1 (en) | 1995-03-15 |
JP2871857B2 (en) | 1999-03-17 |
US5374328A (en) | 1994-12-20 |
IL108762A (en) | 1995-11-27 |
JPH07503583A (en) | 1995-04-13 |
KR950701582A (en) | 1995-04-28 |
IL108762A0 (en) | 1994-05-30 |
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