JPS6357948B2 - - Google Patents

Info

Publication number
JPS6357948B2
JPS6357948B2 JP57172174A JP17217482A JPS6357948B2 JP S6357948 B2 JPS6357948 B2 JP S6357948B2 JP 57172174 A JP57172174 A JP 57172174A JP 17217482 A JP17217482 A JP 17217482A JP S6357948 B2 JPS6357948 B2 JP S6357948B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
recess
layer
type
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57172174A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5961969A (ja
Inventor
Kinshiro Kosemura
Yoshimi Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57172174A priority Critical patent/JPS5961969A/ja
Publication of JPS5961969A publication Critical patent/JPS5961969A/ja
Publication of JPS6357948B2 publication Critical patent/JPS6357948B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs

Landscapes

  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
JP57172174A 1982-09-30 1982-09-30 半導体装置の製造方法 Granted JPS5961969A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57172174A JPS5961969A (ja) 1982-09-30 1982-09-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57172174A JPS5961969A (ja) 1982-09-30 1982-09-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5961969A JPS5961969A (ja) 1984-04-09
JPS6357948B2 true JPS6357948B2 (enrdf_load_stackoverflow) 1988-11-14

Family

ID=15936938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57172174A Granted JPS5961969A (ja) 1982-09-30 1982-09-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5961969A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0795542B2 (ja) * 1987-04-15 1995-10-11 富士通株式会社 半導体装置の製造方法
JP2751935B2 (ja) * 1989-06-14 1998-05-18 富士通株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS5961969A (ja) 1984-04-09

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