JPS58182832A - ＧａＡｓ基板のエツチング方法 - Google Patents
ＧａＡｓ基板のエツチング方法Info
- Publication number
- JPS58182832A JPS58182832A JP6771382A JP6771382A JPS58182832A JP S58182832 A JPS58182832 A JP S58182832A JP 6771382 A JP6771382 A JP 6771382A JP 6771382 A JP6771382 A JP 6771382A JP S58182832 A JPS58182832 A JP S58182832A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- tartaric acid
- hydrogen peroxide
- range
- alpha
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 title claims description 6
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims abstract description 14
- 235000002906 tartaric acid Nutrition 0.000 claims abstract description 14
- 239000011975 tartaric acid Substances 0.000 claims abstract description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000007864 aqueous solution Substances 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 3
- LRRBNLHPFPHVCW-UHFFFAOYSA-N 2,3-dihydroxybutanedioic acid;hydrogen peroxide Chemical compound OO.OC(=O)C(O)C(O)C(O)=O LRRBNLHPFPHVCW-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 14
- 230000008859 change Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 238000003756 stirring Methods 0.000 abstract description 4
- 238000010276 construction Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- CLXNJVPUVFOJSC-UHFFFAOYSA-N O.OO.C(C(O)C(O)C(=O)O)(=O)O Chemical compound O.OO.C(C(O)C(O)C(=O)O)(=O)O CLXNJVPUVFOJSC-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6771382A JPS58182832A (ja) | 1982-04-20 | 1982-04-20 | ＧａＡｓ基板のエツチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6771382A JPS58182832A (ja) | 1982-04-20 | 1982-04-20 | ＧａＡｓ基板のエツチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58182832A true JPS58182832A (ja) | 1983-10-25 |
| JPH0415616B2 JPH0415616B2 (enrdf_load_stackoverflow) | 1992-03-18 |
Family
ID=13352870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6771382A Granted JPS58182832A (ja) | 1982-04-20 | 1982-04-20 | ＧａＡｓ基板のエツチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58182832A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006060207A (ja) * | 2004-08-03 | 2006-03-02 | Samsung Electronics Co Ltd | エッチング溶液及びこれを利用した磁気記憶素子の形成方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5171236A (ja) * | 1974-12-18 | 1976-06-19 | Mitsubishi Electric Corp | Etsuchingueki |
-
1982
- 1982-04-20 JP JP6771382A patent/JPS58182832A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5171236A (ja) * | 1974-12-18 | 1976-06-19 | Mitsubishi Electric Corp | Etsuchingueki |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006060207A (ja) * | 2004-08-03 | 2006-03-02 | Samsung Electronics Co Ltd | エッチング溶液及びこれを利用した磁気記憶素子の形成方法 |
| US8092698B2 (en) | 2004-08-03 | 2012-01-10 | Samsung Electronics Co., Ltd. | Methods of forming semiconductor devices formed by processes including the use of specific etchant solutions |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0415616B2 (enrdf_load_stackoverflow) | 1992-03-18 |
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