JPS6233310B2 - - Google Patents
Info
- Publication number
- JPS6233310B2 JPS6233310B2 JP18084681A JP18084681A JPS6233310B2 JP S6233310 B2 JPS6233310 B2 JP S6233310B2 JP 18084681 A JP18084681 A JP 18084681A JP 18084681 A JP18084681 A JP 18084681A JP S6233310 B2 JPS6233310 B2 JP S6233310B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- film
- solution
- alloy
- iodine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 30
- 229910000927 Ge alloy Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 claims description 6
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910001868 water Inorganic materials 0.000 claims description 3
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 11
- 229910001020 Au alloy Inorganic materials 0.000 description 8
- 229910052740 iodine Inorganic materials 0.000 description 6
- 239000011630 iodine Substances 0.000 description 6
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DKNPRRRKHAEUMW-UHFFFAOYSA-N Iodine aqueous Chemical compound [K+].I[I-]I DKNPRRRKHAEUMW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002496 iodine Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18084681A JPS5881973A (ja) | 1981-11-11 | 1981-11-11 | 金−ゲルマニウム合金膜のエツチング方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18084681A JPS5881973A (ja) | 1981-11-11 | 1981-11-11 | 金−ゲルマニウム合金膜のエツチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5881973A JPS5881973A (ja) | 1983-05-17 |
JPS6233310B2 true JPS6233310B2 (enrdf_load_stackoverflow) | 1987-07-20 |
Family
ID=16090375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18084681A Granted JPS5881973A (ja) | 1981-11-11 | 1981-11-11 | 金−ゲルマニウム合金膜のエツチング方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5881973A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0866209A (ja) * | 1994-08-16 | 1996-03-12 | Aucera Technol Corp | ウオッチバンドの構造 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4654116A (en) * | 1984-11-09 | 1987-03-31 | American Electronic Laboratories, Inc. | Method for producing high resolution etched circuit patterns from clad laminates |
TW200823318A (en) * | 2006-08-28 | 2008-06-01 | Mitsubishi Chem Corp | Etchant and etching method |
-
1981
- 1981-11-11 JP JP18084681A patent/JPS5881973A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0866209A (ja) * | 1994-08-16 | 1996-03-12 | Aucera Technol Corp | ウオッチバンドの構造 |
Also Published As
Publication number | Publication date |
---|---|
JPS5881973A (ja) | 1983-05-17 |
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