JPH0415245U - - Google Patents
Info
- Publication number
- JPH0415245U JPH0415245U JP1990055392U JP5539290U JPH0415245U JP H0415245 U JPH0415245 U JP H0415245U JP 1990055392 U JP1990055392 U JP 1990055392U JP 5539290 U JP5539290 U JP 5539290U JP H0415245 U JPH0415245 U JP H0415245U
- Authority
- JP
- Japan
- Prior art keywords
- frequency circuit
- frequency
- semiconductor element
- circuit device
- bonding wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000007789 sealing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Wire Bonding (AREA)
Description
第１図は本考案による高周波回路装置の封止構
造の例を示す説明図、第２図は９ＧＨＺ帯のマイ
クロ波発振器の本考案による封止構造による場合
と従来の封止構造による場合のチユーニング電圧
対発振周波数の相関関係を示すグラフ図、第３図
、第４図はそれぞれ従来採つてきた高周波回路装
置の封止構造の例を示す説明図である。
１……高周波半導体素子、２……ボンデイング
ワイヤ、３……キヤリア、４……基板、５……中
空キヤツプ、６……接着剤。図中同一符号は同一
または相当するものを示す。
Fig. 1 is an explanatory diagram showing an example of the sealing structure of a high frequency circuit device according to the present invention, and Fig. 2 is a tuning diagram of a 9 GHz band microwave oscillator using the sealing structure according to the present invention and the conventional sealing structure. Graphs showing the correlation between voltage and oscillation frequency, FIGS. 3 and 4 are explanatory diagrams showing examples of conventional sealing structures for high frequency circuit devices, respectively. DESCRIPTION OF SYMBOLS 1... High frequency semiconductor element, 2... Bonding wire, 3... Carrier, 4... Substrate, 5... Hollow cap, 6... Adhesive. The same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
を配置した高周波回路装置において、 該高周波半導体素子と該素子の電極パツドと回
路を接続するボンデイングワイヤが収まる高周波
回路への電気的特性の影響が小さい材質の中空キ
ヤツプで封止構造とすることを特徴とする高周波
回路装置。[Scope of Claim for Utility Model Registration] In a high-frequency circuit device in which a high-frequency semiconductor element is arranged in a high-frequency circuit formed on a substrate, electricity to the high-frequency circuit in which a bonding wire connecting the high-frequency semiconductor element, the electrode pad of the element, and the circuit is accommodated. A high-frequency circuit device characterized by having a sealed structure with a hollow cap made of a material that has little influence on physical characteristics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990055392U JPH0415245U (en) | 1990-05-29 | 1990-05-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990055392U JPH0415245U (en) | 1990-05-29 | 1990-05-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0415245U true JPH0415245U (en) | 1992-02-06 |
Family
ID=31578301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990055392U Pending JPH0415245U (en) | 1990-05-29 | 1990-05-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0415245U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06181266A (en) * | 1992-12-11 | 1994-06-28 | Mitsubishi Electric Corp | Ic package used in high-frequency band |
-
1990
- 1990-05-29 JP JP1990055392U patent/JPH0415245U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06181266A (en) * | 1992-12-11 | 1994-06-28 | Mitsubishi Electric Corp | Ic package used in high-frequency band |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0415245U (en) | ||
| JPS6144433Y2 (en) | ||
| CA1085936A (en) | Balanced-diode parametric amplifier | |
| JPS5838612Y2 (en) | Semiconductor element mounting equipment for three-dimensional planar circuits | |
| JPS5930513Y2 (en) | Grounded bypass capacitor for microwave communication | |
| JPH0614495Y2 (en) | High frequency oscillator | |
| JPS5736860A (en) | Semiconductor device | |
| JPS5883801U (en) | Microwave resonant circuit device | |
| JPS6169846U (en) | ||
| JPS6134743Y2 (en) | ||
| JPH03751Y2 (en) | ||
| JPS6352301U (en) | ||
| JPS62135435U (en) | ||
| JPS5632754A (en) | Hybrid integrated circuit | |
| JPS59143117U (en) | crystal oscillation circuit | |
| JPH0438063U (en) | ||
| JPS6359323U (en) | ||
| JPS61199931U (en) | ||
| JPS61274346A (en) | Semiconductor device | |
| JPS593644U (en) | Oscillation circuit in receiver | |
| JPS61153374U (en) | ||
| JPH0344U (en) | ||
| JPS61100172U (en) | ||
| JPH0360057A (en) | Semiconductor device | |
| JPS58101528U (en) | Crystal oscillator |