JPS61274346A - Semiconductor device - Google Patents

Abstract

PURPOSE:To facilitate expansion of the operatable frequency band especially in an extra high frequency range from the viewpoint of electrical characteristics by forming a hollow part on the surface of the extra high frequency operation region on the semiconductor substrate of a semiconductor device. CONSTITUTION:A box shape insulator 7 is bonded to the surface of an extra high frequency operation region 6 in the semiconductor substrate 2 of a semiconductor device such as an integrated circuit with an insulating adhesive 8. Then the device is completed by sealing with a resin 5. Therefore, a hollow part 9 is formed on the region 6 and the surface of the semiconductor substrate 2 is not contacted with the resin 5 so that the electrical characteristics of the extra high frequency range is not deteriorated.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a structure on an element surface of a semiconductor device.

[Conventional technology]

In the conventional semiconductor device, as shown in FIGS. 2(5) and 2(B), respectively, a plan view and a cross-sectional view, a semiconductor substrate 2 on which a semiconductor element is formed is mounted on a lead frame 1 using a brazing material 3, and a lead portion l is mounted on a lead frame 1. and the electrodes on the semiconductor substrate 2 are connected with a thin wire 4, and the semiconductor substrate 2 and a part of the lead part 1 are sealed with a resin 5 to complete the process.

[Problem that the invention seeks to solve]

Here, the biggest drawback of conventionally used semiconductor devices is that the surface of the semiconductor substrate 20 and the resin 5 are in contact with each other, which deteriorates the electrical characteristics of the ultra-high frequency.

[Means for solving problems]

The semiconductor device according to the present invention has a high frequency region surface covered with a box-shaped insulator 7.

〔Example〕

Hereinafter, the present invention will be explained in detail with reference to the drawings. FIG. 1 shows an embodiment of the invention. As is clear from FIG. 1, a box-shaped insulator 7 is bonded with an insulating adhesive 8 to the surface of an ultra-high frequency operating region 6 of a semiconductor substrate such as an integrated circuit. After this,
It is sealed with resin 5 and completed. Therefore, there is a hollow 9 above the region 6, and there is no deterioration of high frequency characteristics.

〔Effect of the invention〕

In this way, by creating a hollow space on the surface of the ultra-high frequency operating region on the semiconductor substrate of the semiconductor device, it becomes possible to increase the number of cylinders V that can be used in terms of electrical characteristics, especially at ultra-high frequencies.

[Brief explanation of drawings]

FIGS. 1(B) and 1(B) are a plan view and a cross-sectional view, respectively, showing an embodiment of the present invention. FIGS. 2(A) and 2(B) are a plan view and a sectional view, respectively, showing a conventional example. 1...Lead frame, 2...Semiconductor substrate, 3...Raw material, 4...Thin wire, 5
...Resin, 6...Ultra high frequency operating region,
7...Box-shaped insulator, 8...Insulating adhesive% 9...Hollow. Figure 1' Ri-S Lesson 1 can 3υ-Introduction O 2nd Itto "°7 Rem

Claims (1)

[Claims] 1. A semiconductor device, characterized in that a surface of a high frequency region of a semiconductor substrate is covered with an insulator having a hollow portion to form a hollow above the surface of the high frequency region.