JPS6122344Y2 - - Google Patents
Info
- Publication number
- JPS6122344Y2 JPS6122344Y2 JP17176078U JP17176078U JPS6122344Y2 JP S6122344 Y2 JPS6122344 Y2 JP S6122344Y2 JP 17176078 U JP17176078 U JP 17176078U JP 17176078 U JP17176078 U JP 17176078U JP S6122344 Y2 JPS6122344 Y2 JP S6122344Y2
- Authority
- JP
- Japan
- Prior art keywords
- mixer
- dielectric substrate
- stripline
- insulating layer
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Amplitude Modulation (AREA)
- Waveguides (AREA)
Description
【考案の詳細な説明】
本考案は極めて広帯域にわたり特性の良好なマ
イクロ波用混合器に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a microwave mixer that has good characteristics over an extremely wide band.
非線形素子を4個使用するリング変調器により
マイクロ波帯で動作する混合器は第1図に示す原
理図のように構成されている。第1図においてマ
イクロ波信号入力は端子Rより平衡一不平衡変換
器BLNを介し、リング変調器RMDに印加され、
一方局部発振信号入力は端子Lより他のBLNを
介してRMDに印加される。RMDは入力信号Rと
Lとの差周波数信号を発生し、中間周波出力Iの
端子より取出す。このように中間周波出力を得る
ための変調器RMDを中心とする部分を混合器と
通称している。Cは混合器と各信号入力端子間の
直流遮断用容量を示す。第1図の構成を実現する
従来例は第2図に示すように、誘電体基板DEB
の上下各主面に薄導体板PLを並行して設け、ス
トリツプラインSTLを形成し、図の下方導体は
両端の信号印加端子近辺において幅広のものとし
て平衡一不平衡変換器BLNを形成している。
CNTは信号源との接続コネクタ端子を示す。リ
ング変調器RMDはクアド(Quad)型ダイオード
パツケージを使用すると極めて大型であり、かつ
立体構造であり、各端子の接続には異なる方向へ
不要な交差を起さないように十分留意して行なう
必要がある。また1個のパツケージになつていて
もストリツプラインと接続する接続線の長さは通
常数mm以上に達しそれらが近接して且つ各方向へ
適宜延伸しているから、数GHz帯以上で使用する
とき、接続線の配列が信号変換特性を悪化させる
原因となり、更に高周波帯では使用困難となるの
で生産量が限定され、コストが低くならない欠点
があつた。 A mixer operating in a microwave band using a ring modulator using four nonlinear elements is constructed as shown in the principle diagram shown in FIG. In FIG. 1, the microwave signal input is applied from terminal R to the ring modulator RMD via the balanced-to-unbalanced converter BLN,
On the other hand, a local oscillation signal input is applied from terminal L to RMD via another BLN. RMD generates a difference frequency signal between input signals R and L, and takes it out from the intermediate frequency output I terminal. The part centered on the modulator RMD for obtaining intermediate frequency output in this way is commonly called a mixer. C indicates the DC interrupting capacity between the mixer and each signal input terminal. A conventional example of realizing the configuration shown in Fig. 1 is a dielectric substrate DEB as shown in Fig. 2.
Thin conductor plates PL are provided in parallel on each of the upper and lower principal surfaces to form a stripline STL, and the lower conductor in the figure is wide near the signal application terminals at both ends to form a balanced-unbalanced converter BLN. ing.
CNT indicates a connector terminal for connecting to a signal source. The ring modulator RMD is extremely large when using a quad diode package and has a three-dimensional structure, so care must be taken when connecting each terminal to avoid unnecessary crossing in different directions. There is. In addition, even if it is a single package, the length of the connecting wires that connect to the stripline is usually several mm or more, and they are close to each other and extend appropriately in each direction, so they are used in bands of several GHz or more. When doing so, the arrangement of the connecting wires causes deterioration of signal conversion characteristics, and furthermore, it becomes difficult to use in high frequency bands, which limits the production volume and has the drawback that costs cannot be reduced.
本考案の目的は前述の欠点を改善し、比較的簡
易な構造で極めて広帯域にわたり特性良く動作す
るマイクロ波用混合器を提供することにある。 An object of the present invention is to improve the above-mentioned drawbacks and to provide a microwave mixer which has a relatively simple structure and operates with good characteristics over an extremely wide band.
以下図面に示す本考案実施例について説明す
る。第3図は本考案実施例を示す斜視図である。
誘電体例えばサフアイアの基板DEBの上下各面
にストリツプラインSTLを形成する薄導体板PL
1乃至PL4を設け、PL1とPL2及びPL3とPL
4とは基板DEBの中央部で間隔を有して対向し
ている。該間隔部に基板DEBを貫通してスルー
ホールTHLを2個設け、第3図の図面では内部
を金属で充填し、導線を形成させている。非線形
素子の部分は第4図に部分拡大した断面図を示す
ように構成されている。ストリツプラインを形成
する薄導体板PL2PL4を例にとると、各導体板
PL2,PL4から上下各方向へ順次に酸化珪素
Sio2の絶縁層、蒸着金属膜MF、ダイオードチツ
プDT(例えばシヨツトキ・バリアダイオードの
チツプ)を基板DEBに対し略対称に設ける。次
に対向している薄導体板PL1,PL3についての
ダイオードチツプDTを前記スルーホールTHLの
金属を介してリング変調器を形成するよう接続し
て行く。或いはスルーホールTHL内を貫通する
導線を設けそれによつてダイオードチツプDT同
志を接続することでも良い。ここで薄導体板PL
2或いはPL4と金属膜MF間には絶縁層を誘電体
として容量が形成されているから、この容量を直
流遮断用容量として有効に使用することができ
る。 Embodiments of the present invention shown in the drawings will be described below. FIG. 3 is a perspective view showing an embodiment of the present invention.
A thin conductor plate PL that forms strip lines STL on each of the upper and lower surfaces of the dielectric substrate DEB, such as sapphire.
1 to PL4 are provided, PL1 and PL2 and PL3 and PL
4 and is opposed to each other with a gap in the center of the board DEB. Two through holes THL are provided in the spaced portion passing through the substrate DEB, and in the drawing of FIG. 3, the inside is filled with metal to form a conductive wire. The nonlinear element is constructed as shown in FIG. 4, a partially enlarged sectional view. Taking thin conductor plates PL2PL4 that form a stripline as an example, each conductor plate
Silicon oxide is applied sequentially from PL2 and PL4 in each direction upward and downward.
An insulating layer of Sio 2 , a vapor-deposited metal film MF, and a diode chip DT (for example, a shot barrier diode chip) are provided approximately symmetrically with respect to the substrate DEB. Next, the diode chips DT of the opposing thin conductor plates PL1 and PL3 are connected through the metal of the through hole THL to form a ring modulator. Alternatively, a conducting wire passing through the through hole THL may be provided to connect the diode chips DT to each other. Here, thin conductor plate PL
Since a capacitor is formed between 2 or PL4 and the metal film MF using the insulating layer as a dielectric, this capacitor can be effectively used as a DC blocking capacitor.
第5図は第3図の上面図で中間周波出力段の高
周波チヨークコイルRFCもを含めて基板上に設
けたものを示している。したがつてスルーホール
THLは都合4個設けてある。第5図は縦3mm横
幅15mmのような基板に0.3mm角のダイオードチツ
プを配設した場合の寸法比較例が示され、ダイオ
ードチツプ点対称に配置されるから、接続線が互
いに離融して長さが1mm前後と極めて短かくでき
るから第4図に示す特性図のように20GHz帯に至
るまで極めて広帯域にわたり変換効率の劣化が少
ないという大きな効果を有する。 FIG. 5 is a top view of FIG. 3 and shows what is provided on the substrate including the high frequency choke coil RFC of the intermediate frequency output stage. Therefore through hole
There are four THLs available. Figure 5 shows a size comparison example when a 0.3 mm square diode chip is arranged on a board with a length of 3 mm and a width of 15 mm.Since the diode chips are arranged symmetrically, the connecting wires are fused to each other. Since the length can be made extremely short, around 1 mm, it has the great effect of minimizing deterioration in conversion efficiency over an extremely wide band up to the 20 GHz band, as shown in the characteristic diagram shown in Figure 4.
更に本考案によると構造が簡単なため、半導体
製造プロセスと同様にパターンを形成して行くこ
とができるから小型軽量の製品ができる。 Further, according to the present invention, since the structure is simple, patterns can be formed in the same manner as in semiconductor manufacturing processes, making it possible to produce small and lightweight products.
また広帯域にわたり使用できるから大量生産す
ることができ、単価が大幅減になる。更に特性が
均一化するので信頼度が向上する効果を有する。 Furthermore, since it can be used over a wide band, it can be mass produced, resulting in a significant reduction in unit cost. Furthermore, since the characteristics are made uniform, reliability is improved.
第1図はリング変調器によるマイクロ波用混合
器の原理図、第2図は第1図の構成を実現する従
来例の斜視図、第3図は本考案実施例の斜視図、
第4図は第3図の部分拡大した断面図、第5図は
第3図の上面図、第6図は第3図の動作特性を示
す図である。
R……マイクロ波入力端子、L……局部発振信
号入力端子、I……中間周波信号出力端子、C…
…直流遮断用容量、BLN……平衡一不平衡変換
器、RMD……リング変調器、STL……ストリツ
プライン、THL……スルーホール、DT……ダイ
オードチツプ、MF……蒸着金属膜、DEB……誘
導体基板、RFC……高周波チヨークコイル。
FIG. 1 is a principle diagram of a microwave mixer using a ring modulator, FIG. 2 is a perspective view of a conventional example that realizes the configuration of FIG. 1, and FIG. 3 is a perspective view of an embodiment of the present invention.
4 is a partially enlarged sectional view of FIG. 3, FIG. 5 is a top view of FIG. 3, and FIG. 6 is a diagram showing the operating characteristics of FIG. 3. R...Microwave input terminal, L...Local oscillation signal input terminal, I...Intermediate frequency signal output terminal, C...
...DC blocking capacity, BLN...balanced-unbalanced converter, RMD...ring modulator, STL...stripline, THL...through hole, DT...diode chip, MF...deposited metal film, DEB ...Dielectric substrate, RFC...High frequency chiyoke coil.
Claims (1)
体基板上において、リング状に接続した非線形
素子4個を用い、高周波受信入力と局部発振器
の出力とを印加し中間周波信号を得る混合器に
おいて、 前記上下各面のストリツプラインを切断し中間
部分に誘電体基板を貫通するスルーホールを複
数個設け、ストリツプラインの導体対向部には
誘電体基板の各上下に計4個のチツプ状非線形
素子を点対称に設置し、 各非線形素子はリング変調器を構成するよう前
期スルーホールを介して互いに接続されること
を特徴とするマイクロ波用混合器。 2 ストリツプラインの導体対向部に絶縁層を介
して金属薄膜とその外方に非線形素子を設け、
前記絶縁層を誘電体として得られる容易を、混
合器と各信号入力端子間の直流遮断用容量とし
たことを特徴とする実用新案登録請求の範囲第
1項記載のマイクロ波用混合器。[Claims for Utility Model Registration] 1. Using four nonlinear elements connected in a ring shape on a dielectric substrate with strip lines formed on each upper and lower surface, a high frequency reception input and a local oscillator output are applied, and the intermediate In a mixer for obtaining a frequency signal, the stripline on each of the upper and lower sides is cut, and a plurality of through holes are provided in the middle part to pass through the dielectric substrate, and the conductor facing part of the stripline is provided with a plurality of through holes on each of the upper and lower sides of the dielectric substrate. A microwave mixer characterized in that a total of four chip-shaped nonlinear elements are installed in a point-symmetrical manner, and each nonlinear element is connected to each other via a through hole to form a ring modulator. 2. A metal thin film is provided on the conductor facing part of the strip line with an insulating layer interposed therebetween, and a nonlinear element is provided on the outside of the metal thin film.
2. The microwave mixer according to claim 1, wherein the insulating layer is a dielectric material and is used as a direct current blocking capacitor between the mixer and each signal input terminal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17176078U JPS6122344Y2 (en) | 1978-12-12 | 1978-12-12 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17176078U JPS6122344Y2 (en) | 1978-12-12 | 1978-12-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5587010U JPS5587010U (en) | 1980-06-16 |
JPS6122344Y2 true JPS6122344Y2 (en) | 1986-07-04 |
Family
ID=29175965
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17176078U Expired JPS6122344Y2 (en) | 1978-12-12 | 1978-12-12 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6122344Y2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60103853A (en) * | 1983-11-11 | 1985-06-08 | Japan Radio Co Ltd | Phase amplitude modulation circuit |
-
1978
- 1978-12-12 JP JP17176078U patent/JPS6122344Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5587010U (en) | 1980-06-16 |
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