JPH0311886Y2 - - Google Patents

Description

[Detailed description of the invention] (a) Industrial application field The present invention relates to pressure contact type semiconductor devices such as electrostatic induction thyristors and gate turn-off thyristors.
In particular, it relates to improvements in its seal structure.

(B) Prior Art Generally, in pressure contact type semiconductor devices such as electrostatic induction thyristors, an insulating material is applied as a passivation to the outer peripheral portion of the surface of the device, and a large number of cathode electrodes are provided inside the insulating material.

FIG. 2 is an explanatory diagram showing an example of the seal structure of a conventional electrostatic induction thyristor, in which 1 is a copper block as a seal, 2 is a semiconductor element 6 as a cap.
3 is a lead wire for the gate electrode, 4 is a ring for press-contacting a large number of cathode electrodes, 5 is a fixing jig with an L-shaped cross section for fixing the semiconductor element 6, and 7 is a passivation. An example of this is an insulating material such as silicone rubber.

In FIG. 2, an insulator 7 is applied to the outer circumferential portion of the surface of the semiconductor element 6, and a ring 4 made of molybdenum or the like is provided inside the insulator 7 to be in contact with a number of cathode electrodes (not shown). A fixing jig 5 made of, for example, Teflon is provided for fixing the elements by engaging with the outer peripheral ends of the ring 4, the semiconductor element 6, and the copper block 2 so as to cover the elements. Further, from the gate electrode (not shown) of the semiconductor element 6 to the center part of the ring 4 and the copper block 1
The gate lead wire 3 is led out through the inside, and the copper block 1 on the ring 4 and the semiconductor element 6 are connected to each other.
Copper block 2 as a cap that contacts the bottom surface of
The ring 4, the semiconductor element 6, etc. are brought into pressure contact with each other.

(c) Problems to be solved by the invention However, in such a seal structure, the inner surface of the fixing jig 5 comes into contact with the surface of the insulator 7 when the element is fixed, so that the insulator 7 is separated from the semiconductor element 6. This could be a factor that causes peeling, poor characteristics of the device, and deterioration.

The purpose of the present invention is to solve the above-mentioned problems and provide a fixture in which the insulator 7 does not come into contact with the inner surface of the fixing jig 5.

(d) Means for solving the problem The means is a structure in which a groove is dug into the inner surface of the fixing jig so that the upper part of the insulator does not come into contact with the inner surface of the fixing jig. The operation of the present invention will be described below in detail based on an example of an electrostatic induction thyristor shown in FIG.

(E) Embodiment FIG. 1 is an explanatory diagram similar to FIG. 2 according to the present invention, and the same reference numerals as in FIG. 2 indicate the same components.

In FIG. 1, a fixing jig 5 is placed on the top of the insulator 7 applied to the outer peripheral portion of the surface of the semiconductor element 6.
A groove Q is formed by providing a groove 51a dug into the inner surface of the fixing jig 51 so as not to contact the inner surface of the fixing jig 51.

Furthermore, when fixing the semiconductor element 6 with the fixing jig 51, the groove upper part 51b on one side of the fixing jig 51 comes into contact with the surface of the semiconductor element 6 as shown in the figure, so the state is more stable than in the conventional case. The element can be fixed with.

(f) Effects of the invention As explained above, according to the invention, the inner surface of the fixing jig 51 no longer comes into contact with the upper part of the insulator 7, so that the insulator does not peel off. This prevents the device from having poor characteristics or deteriorating. Furthermore, since the upper part of the side groove comes into contact with the surface of the element, there is less misalignment of the ring than in the conventional case. Furthermore, it is practical because the same manufacturing process and the same parts can be used.

[Brief explanation of drawings]

FIG. 1 is an explanatory diagram for explaining one embodiment of a seal structure for a semiconductor device according to the present invention, and FIG. 2 is an explanatory diagram of a conventional one. 1, 2...Copper block, 4...Ring, 5,5
1...Fixing jig, 51a...Drilling groove, 6...
Semiconductor element, 7...insulator.

Claims (1)

[Scope of utility model registration request] A fixing method in which an insulating material is applied as a passivation to the outer peripheral part of the surface of a semiconductor element, a ring is provided as an internal cathode electrode, and the element is fixed by engaging the ring and each outer peripheral end of the semiconductor element so as to cover the insulating material. In a seal structure that includes a jig and presses a ring and a semiconductor element, etc., by means of copper blocks provided on both sides of the element, the upper part of the insulator does not come into contact with the inner surface of the fixing jig. A sealing structure for a semiconductor device, characterized in that a groove is provided on the inner surface of the fixing jig.