JPH0432761Y2 - - Google Patents

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a ceramic package for semiconductor devices, and particularly to a ceramic package for ultra-high frequency field effect transistors.

[Conventional technology]

A plan view of a conventional ceramic package for an ultra-high frequency field effect transistor is shown in FIG. In the figure, a metal layer 2 for pellet mounting is provided at the bottom of a recess in a tray-shaped ceramic base 1, and a pair of source leads 3a and 3b penetrate the side wall of the base 1 with the pellet mount 2 in between. and is pulled out to the outside. In addition, source lead 3
a and 3b are electrically connected to each other via the conductive film on the bottom of the case and the metal layer of the pellet mount section 2. Furthermore, a gate lead 4 and a drain lead 5 are drawn out in opposite directions with the pellet mount portion 2 in between, in a direction perpendicular to the direction of the source leads 3a and 3b.

[Problem that the invention attempts to solve]

In the conventional package described above, an ultra high frequency field effect transistor pellet having a plurality of source electrodes 7, 7, . . . as shown in the plan view of FIG. When connecting the electrode 7, gate electrode 8, drain electrode 9 and the corresponding inner end of the lead with a bonding wire, the five source electrodes 7,
7,... are divided into two parts, 2 and 3, and one is connected to the source lead 3a and the other to the source lead 3b with bonding wires. The wire bonding between the source electrode and the inner end of the lead is
Naturally, not only is the bonding work difficult to perform, but the bonding wire becomes long, which adversely affects high frequency characteristics.

[Means for solving problems]

According to the present invention, a semiconductor pellet mount made of a metal layer is provided at the center of the bottom surface of a recess in a ceramic base, and a pair of source pellets which are pulled out in opposite directions are provided with the pellet mount in between. A semiconductor device package having a lead and a gate lead and a drain lead which are electrically insulated from the pellet mount part with a pellet mount part therebetween in a direction perpendicular to the leads and which are drawn out in opposite directions. The terminal land part that electrically conducts the source lead of the transistor is placed separately from the pellet mount part, and the source electrode of the field effect transistor fixed to the pellet mount part and the terminal land are connected, and the terminal land and A package for a semiconductor device in which pellet mounting portions are formed on the same plane is obtained.

〔Example〕

Next, the present invention will be explained with reference to examples.

FIG. 1 is a plan view of an embodiment of the present invention. Comparing this example with the conventional example shown in FIG. 2, the ceramic substrate 1, source leads 3a and 3b, gate lead 4, and drain lead 5 are the same in both cases. However, in this example, the metal layer 2 for pellet mounting is placed at the center of the bottom of the tray-shaped ceramic base 1.
A terminal land 6 for connecting a source electrode is provided between the gate lead 4 and the gate lead 4, which is conductively connected to the source leads 3a and 3b by a conductive film.

[Effects of the invention] The pellets shown in FIG. When connecting each electrode and the inner end of the lead with a bonding wire, each of the multiple source electrodes should be connected to the terminal land 6 with a short bonding wire in a straight line. Moreover, since they can be connected in parallel, this connection work is extremely easy, and the bonding wires can be short, so that there is no adverse effect on high frequency characteristics.

[Brief explanation of the drawing]

Fig. 1 is a plan view of an embodiment of the present invention with the lid removed, Fig. 2 is a plan view of a conventional package for ultra-high frequency field effect transistors with the lid removed, and Fig. 3 is a plan view of the package of the present invention. FIG. 3 is a plan view of a super high frequency field effect transistor pellet to be housed. DESCRIPTION OF SYMBOLS 1... Ceramic base, 2... Pellet mount part (metal layer), 3a, 3b... Lead for source,
4...Gate lead, 5...Drain lead,
6... Terminal land for source electrode, 7... Source electrode, 8... Gate electrode, 9... Drain electrode.

Claims (1)

[Scope of utility model registration request] A semiconductor pellet mount made of a metal layer is provided on the bottom surface of the recess in the ceramic base, and a pair of source leads drawn out in opposite directions and a pair of source leads are provided in a direction perpendicular thereto, with the pellet mount placed therebetween. In the package for a semiconductor device, the semiconductor device package has a gate lead and a drain lead that are electrically insulated from the pellet mount part and led out in opposite directions, with the pellet mount part therebetween, A terminal land electrically connected to the pellet mount is arranged separately from the pellet mount, and the terminal land is connected to a source electrode of a field effect transistor fixed to the pellet mount. A package for a semiconductor device, characterized in that pellet mounting portions are formed on the same plane.