JPH0414939Y2 - - Google Patents
Info
- Publication number
- JPH0414939Y2 JPH0414939Y2 JP1983006789U JP678983U JPH0414939Y2 JP H0414939 Y2 JPH0414939 Y2 JP H0414939Y2 JP 1983006789 U JP1983006789 U JP 1983006789U JP 678983 U JP678983 U JP 678983U JP H0414939 Y2 JPH0414939 Y2 JP H0414939Y2
- Authority
- JP
- Japan
- Prior art keywords
- external
- lead
- external leads
- insulator
- leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000012212 insulator Substances 0.000 claims description 5
- 239000011347 resin Substances 0.000 description 23
- 229920005989 resin Polymers 0.000 description 23
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Description
【考案の詳細な説明】
本考案は、高耐圧半導体装置に適した外部リー
ド構造を有する絶縁物封止半導体装置に関するも
のである。[Detailed Description of the Invention] The present invention relates to an insulator-sealed semiconductor device having an external lead structure suitable for a high voltage semiconductor device.
第１図〜第４図は従来の樹脂モールド形パワー
トランジスタの１例を示すもので、第１図と第２
図はモールドされた樹脂体のない状態、第３図と
第４図はモールドされた樹脂体のある状態であ
る。第１図と第３図は平面図、第２図と第４図は
これらのＡ−Ａ線断面図である。 Figures 1 to 4 show an example of a conventional resin-molded power transistor.
The figure shows the state without the molded resin body, and FIGS. 3 and 4 show the state with the molded resin body. 1 and 3 are plan views, and FIGS. 2 and 4 are cross-sectional views taken along the line A--A.
裏面をコレクタ電極とするトランジスタチツプ
１が放熱板２の上に固着されており、放熱板２か
らコレクタリードとなる外部リード３が延びてい
る。外部リード３と並列配置された外部リード
４，５は、それぞれベースリードとエミツタリー
ドであり、トランジスタチツプ１の表面のベース
電極あるいはエミツタ電極との間はそれぞれ内部
リード線６，７で接続されている。トランジスタ
チツプ１は樹脂体８でモールド（封止）されてお
り、外部リード３，４，５は樹脂体８から１平面
上に並列して導出されている。第１図と第２図の
破線は樹脂体８の外形を示している。外部リード
３，４，５は、樹脂体８からの導出側が幅広部３
ａ，４ａ，５ａとなつており、そこから先端側が
幅狭部３ｂ，４ｂ，５ｂとなつている。幅広部３
ａ，４ａ，５ａは、外部リードに外力が加わつて
もあるいは加えても樹脂体８からの導出部近傍で
外部リードが変形し難いように補強するためのも
のである。幅広部３ａ，４ａ，５ａは、それぞれ
の幅狭部３ｂ，４ｂ，５ｂを樹脂体８まで延長し
た部分の両側に張出した形状である。幅狭部３
ｂ，４ｂ，５ｂは、実質的に外部への接続端子と
して使われる部分であり、かなり幅を狭くしてリ
ード線として必要な柔軟性を持たせている。外部
リード４，５の放熱板２に隣接する部分は、内部
リード線６，７を接続するための端子部４ｃ，５
ｃとなつている。 A transistor chip 1 whose back surface serves as a collector electrode is fixed on a heat sink 2, and an external lead 3 serving as a collector lead extends from the heat sink 2. External leads 4 and 5 arranged in parallel with the external lead 3 are a base lead and an emitter lead, respectively, and are connected to the base electrode or emitter electrode on the surface of the transistor chip 1 by internal lead wires 6 and 7, respectively. . The transistor chip 1 is molded (sealed) with a resin body 8, and external leads 3, 4, and 5 are led out from the resin body 8 in parallel on one plane. The broken lines in FIGS. 1 and 2 indicate the outer shape of the resin body 8. The external leads 3, 4, and 5 have wide portions 3 on the side leading out from the resin body 8.
a, 4a, and 5a, and the tip end thereof becomes narrow portions 3b, 4b, and 5b. Wide part 3
a, 4a, and 5a are for reinforcing the external lead so that it is difficult to deform in the vicinity of the lead-out portion from the resin body 8 even if an external force is applied to the external lead. The wide portions 3a, 4a, 5a have shapes extending from the respective narrow portions 3b, 4b, 5b to both sides of the resin body 8. Narrow part 3
b, 4b, and 5b are portions that are essentially used as connection terminals to the outside, and are made considerably narrow in width to provide flexibility necessary for lead wires. Portions of the external leads 4 and 5 adjacent to the heat sink 2 are terminal portions 4c and 5 for connecting the internal lead wires 6 and 7.
c.
ところで、パワートランジスタチツプ１に高耐
圧のものを使用したとき、外部リード３と４の間
および外部リード３と５の間の樹脂体８の表面に
沿つての最短距離、いわゆる外部リード間の沿面
距離ｌが問題となる。すなわち、高圧が印加され
ると外部リード間の樹脂体表面を電流通路とする
耐圧不良が起きやすいので、例えば耐圧400V以
上の製品では外部リード間の沿面距離ｌを２mm以
上は取りたいところである。 By the way, when a high-voltage power transistor chip 1 is used, the shortest distance along the surface of the resin body 8 between the external leads 3 and 4 and between the external leads 3 and 5, the so-called creepage between the external leads. The distance l becomes a problem. That is, when a high voltage is applied, breakdown voltage failures are likely to occur where the resin surface between the external leads becomes a current path, so for example, in products with a breakdown voltage of 400 V or more, it is desirable to have a creepage distance l between the external leads of 2 mm or more.
しかし、外部リードの幅広部の幅ｗは、補強部
としての効果を持たせるために小さくするにも限
度がある。また、外部リードの間隔ｐは、半導体
装置の小形化の要求を応えるために樹脂体８の幅
をできるだけ小さく設計する必要のあることか
ら、大きくするにも限度がある。しかも、外部リ
ードの間隔ｐは、業界としての標準的な値があつ
て設計の自由度がない場合も多い。このため、特
に小形の樹脂モールド形パワートランジスタで
は、その耐圧からすると外部リード間の沿面距離
ｌが不足している場合があり、悪条件下の使用で
は樹脂体８の表面において耐圧不良を引き起こす
恐れがあつた。 However, there is a limit to how small the width w of the wide part of the external lead can be made to have the effect of a reinforcing part. Furthermore, there is a limit to increasing the interval p between the external leads because it is necessary to design the width of the resin body 8 as small as possible in order to meet the demand for miniaturization of semiconductor devices. Moreover, the distance p between the external leads has a standard value as an industry, and there is often no freedom in design. For this reason, especially in small resin-molded power transistors, the creepage distance l between the external leads may be insufficient considering the withstand voltage, and if used under adverse conditions, there is a risk of voltage withstand failure on the surface of the resin body 8. It was hot.
本考案は上記従来の欠点を解決するためのもの
で、外部リード間の沿面距離を大きく取れる絶縁
物封止半導体装置を提供することを目的とする。 The present invention is intended to solve the above-mentioned conventional drawbacks, and aims to provide an insulator-sealed semiconductor device in which the creepage distance between external leads can be increased.
本考案は、以下で実施例について説明するよう
に、外部リードの幅広部の形状に特徴を有する絶
縁物封止半導体装置である。 The present invention is an insulator-sealed semiconductor device characterized by the shape of the wide portion of the external lead, as will be described below with reference to embodiments.
第５図〜第８図は、本考案の１実施例に係る樹
脂モールド形パワートランジスタを示すもので、
第１図〜第４図の従来構造にそれぞれ対応してい
る。したがつて、同一箇所には同一符号を付し、
その説明を省略する。なお、断面は実質的に同一
箇所であるので、第１図〜第８図に共通する形で
Ａ−Ａ線断面と表示した。 5 to 8 show a resin molded power transistor according to an embodiment of the present invention,
These correspond to the conventional structures shown in FIGS. 1 to 4, respectively. Therefore, the same parts are given the same symbols,
The explanation will be omitted. Note that since the cross sections are at substantially the same location, they are indicated as A-A line cross sections in a common manner in FIGS. 1 to 8.
中央に位置する外部リード３については、幅広
部３ａが幅狭部３ｂを樹脂体８まで延長した部分
の両側に張出している。上側に位置する外部リー
ド４については、幅広部４ａは幅狭部４ｂを樹脂
体８まで延長した部分の上側（外部リード３に対
面する側とは反対側）にのみ張出しており、外部
リード４の下側面は樹脂体８から先端まで直線的
に延びている。下側に位置する外部リード５につ
いては、上下の違いがあるだけで、外部リード４
と同じである。 Regarding the external lead 3 located at the center, the wide portion 3a extends to both sides of the portion where the narrow portion 3b extends to the resin body 8. Regarding the external lead 4 located on the upper side, the wide part 4a protrudes only above the part extending the narrow part 4b to the resin body 8 (the side opposite to the side facing the external lead 3), and the external lead 4 The lower surface extends linearly from the resin body 8 to the tip. Regarding the external lead 5 located on the lower side, there is only a difference in the top and bottom, and the external lead 4
is the same as
なお、外部リードの幅広部３ａ，４ａ，５ａに
は、第７図に対応する第９図の平面図で示すよう
に、製造段階で外部リード同志を連結している部
材を切断した結果として残る連結部材残存部９が
見られる場合が多い。しかし、連結部材残存部９
は、樹脂体８から少し離れているので、外部リー
ド間の沿面距離ｌに関しては何らの影響を与えな
い。 Note that, as shown in the plan view of FIG. 9 corresponding to FIG. 7, the wide parts 3a, 4a, and 5a of the external leads remain as a result of cutting the members connecting the external leads together during the manufacturing stage. In many cases, the connecting member remaining portion 9 can be seen. However, the connecting member remaining portion 9
is a little apart from the resin body 8, so it does not have any influence on the creepage distance l between the external leads.
また、外部リード３と４の間および外部リード
３と５の間に、樹脂体８の形状変更による段差部
１０，１１を設けている。段差部１０，１１は、
樹脂体８に凹部１２を設けることにより形成され
ており、外部リード３を凹部１２の底面から導出
し、外部リード４，５は相対的に凸部となる凹部
１２の両側からそれぞれ導出している。段差部１
０，１１の設け方としては、凹部１２を逆に凸部
とするなどの種々の方法が考えられるが、樹脂体
８の外形寸法に影響を与えることのない凹部１２
とする方法が最も実用的である。 Furthermore, stepped portions 10 and 11 are provided between the external leads 3 and 4 and between the external leads 3 and 5 by changing the shape of the resin body 8. The step portions 10 and 11 are
It is formed by providing a recess 12 in the resin body 8, and the external lead 3 is led out from the bottom of the recess 12, and the external leads 4 and 5 are led out from both sides of the recess 12, which are relatively convex parts. . Step part 1
Various methods can be considered for providing the recesses 12 and 11, such as turning the recesses 12 into convex parts.
The most practical method is to
この実施例によれば、外部リード４，５の幅広
部４ａ，５ａの形状を直線状の外部リードと見な
せる範囲で変更したことにより、直線状の外部リ
ードのもつ取扱いの容易さを損なうことなく外部
リード間の沿面距離ｌを大きく取れる。また、樹
脂体８に凹部１２を形成したことによる段差部１
０，１１によつても外部リード間の沿面距離ｌが
大きく取られている。１例として、外部リードの
間隔ｐが2.54mmで外部リードの幅広部の幅ｗが
1.4mm、外部リードの幅狭部の幅が0.7mm、段差部
１０，１１の長さ（凹部１２の深さ）を0.6mmと
すると、外部リード間の沿面距離ｌは2.09mm（段
差部１０，１１がないときは1.49mm）となる。同
じ条件で従来構造であれば、ｌは1.14mmである。 According to this embodiment, the shapes of the wide parts 4a, 5a of the external leads 4, 5 are changed to the extent that they can be regarded as linear external leads, without impairing the ease of handling that linear external leads have. Creepage distance l between external leads can be increased. In addition, the stepped portion 1 due to the formation of the recessed portion 12 in the resin body 8
0 and 11 also have a large creepage distance l between the external leads. As an example, the interval p of the external leads is 2.54 mm, and the width w of the wide part of the external leads is
1.4 mm, the width of the narrow part of the external lead is 0.7 mm, and the length of the stepped portions 10 and 11 (depth of the recessed portion 12) is 0.6 mm, then the creepage distance l between the external leads is 2.09 mm (the width of the stepped portion 10 , 1.49mm if there is no 11). If the conventional structure is used under the same conditions, l is 1.14 mm.
以上、実施例について説明したように、本考案
によれば外部リードの間隔を増大することなく沿
面距離を大きくとれ、かつ外部リードが直線状と
みなせる形状となつている。このため、取扱性の
よい、かつ小型化した高耐圧化の可能な絶縁物封
止半導体装置を提供することができる。 As described above with respect to the embodiments, according to the present invention, the creepage distance can be increased without increasing the interval between the external leads, and the external leads have a shape that can be regarded as linear. Therefore, it is possible to provide an insulator-sealed semiconductor device that is easy to handle, compact, and capable of high voltage resistance.
なお、本考案は上記実施例に限定されることな
く、その趣旨に基づいて種々の変形・応用が可能
である。 Note that the present invention is not limited to the above-mentioned embodiments, and various modifications and applications can be made based on the spirit thereof.
第１図〜第４図は従来の絶縁物封止半導体装置
を示す。第５図〜第９図は本考案に係る絶縁物封
止半導体装置を示す。第１図、第３図、第５図お
よび第７図は平面図で、第２図、第４図、第６図
および第８図はそれぞれのＡ−Ａ線断面図であ
る。第９図も平面図である。
１はパワートランジスタチツプ（半導体素子）、
２は放熱板、３，４，５は外部リード、３ａ，４
ａ，５ａは外部リードの幅広部、３ｂ，４ｂ，５
ｂは外部リードの幅狭部、４ｃ，５ｃは外部リー
ドの内部リード線用端子部、６，７は内部リード
線、８は樹脂体（絶縁物）、９は連結部材残存部、
１０，１１は樹脂体の段差部、１２は樹脂体の凹
部。
1 to 4 show a conventional insulator-sealed semiconductor device. 5 to 9 show an insulator-sealed semiconductor device according to the present invention. 1, 3, 5, and 7 are plan views, and FIGS. 2, 4, 6, and 8 are sectional views taken along the line A--A. FIG. 9 is also a plan view. 1 is a power transistor chip (semiconductor element),
2 is a heat sink, 3, 4, 5 are external leads, 3a, 4
a, 5a are wide parts of external leads, 3b, 4b, 5
b is the narrow part of the external lead, 4c and 5c are the terminal parts for the internal lead wire of the external lead, 6 and 7 are the internal lead wires, 8 is the resin body (insulator), 9 is the remaining part of the connecting member,
10 and 11 are stepped portions of the resin body, and 12 are concave portions of the resin body.
Claims (1)
とも第１、第２および第３の外部リードが第１の
外部リードを中央に配して前記絶縁物から並列に
導出され、前記第１、第２および第３の外部リー
ドはそれぞれ前記絶縁物からの導出側が幅広部で
先端側が幅狭部である構造において、前記第１の
外部リードの前記幅広部は前記第１の外部リード
の前記幅狭部を前記絶縁物まで延長した部分の両
側に張出した形状で幅広になつており、前記第
２、第３の外部リードの前記幅広部はそれぞれ前
記第２、第３の外部リードの前記幅狭部を前記絶
縁物まで延長した部分の前記第１の外部リードに
対面する側とは反対側にのみ張出した形状で幅広
になつており、前記第２、第３の外部リードの前
記第１の外部リードに対面する側は前記導出側か
ら前記先端側まで実質的に直線的に延びているこ
とを特徴とする絶縁物封止半導体装置。 A semiconductor element is sealed with an insulator, and at least first, second, and third external leads are led out in parallel from the insulator with the first external lead in the center, and The second and third external leads each have a wide part on the side leading out from the insulator and a narrow part on the tip side, and the wide part of the first external lead is the narrow part of the first external lead. The wide portions of the second and third external leads are extended to the narrow portions of the second and third external leads, respectively. The part extends to the insulator and is widened only on the side opposite to the side facing the first external lead, and the first external lead of the second and third external leads An insulator-sealed semiconductor device characterized in that a side facing an external lead extends substantially linearly from the lead-out side to the tip side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP678983U JPS59112954U (en) | 1983-01-21 | 1983-01-21 | Insulator-encapsulated semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP678983U JPS59112954U (en) | 1983-01-21 | 1983-01-21 | Insulator-encapsulated semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59112954U JPS59112954U (en) | 1984-07-30 |
| JPH0414939Y2 true JPH0414939Y2 (en) | 1992-04-03 |
Family
ID=30138329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP678983U Granted JPS59112954U (en) | 1983-01-21 | 1983-01-21 | Insulator-encapsulated semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59112954U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0528777Y2 (en) * | 1987-10-05 | 1993-07-23 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53112275U (en) * | 1977-02-10 | 1978-09-07 | ||
| JPS5584957U (en) * | 1978-12-04 | 1980-06-11 |
-
1983
- 1983-01-21 JP JP678983U patent/JPS59112954U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59112954U (en) | 1984-07-30 |
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