JPH0548356U - Insulator-sealed semiconductor device - Google Patents

Insulator-sealed semiconductor device

Info

Publication number
JPH0548356U
JPH0548356U JP2570892U JP2570892U JPH0548356U JP H0548356 U JPH0548356 U JP H0548356U JP 2570892 U JP2570892 U JP 2570892U JP 2570892 U JP2570892 U JP 2570892U JP H0548356 U JPH0548356 U JP H0548356U
Authority
JP
Japan
Prior art keywords
lead
external
insulator
leads
external leads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2570892U
Other languages
Japanese (ja)
Inventor
峯秀 都外川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP2570892U priority Critical patent/JPH0548356U/en
Publication of JPH0548356U publication Critical patent/JPH0548356U/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

(57)【要約】 （修正有） 【目的】 絶縁物封止半導体装置の外部リード間に大き
な沿面距離を確保する。 【構成】 第１と第２の外部リード３と４の間及び第１
と第３の外部リード３と５の間には、樹脂体８の形状変
更による凸部１２が設けられ、十分な大きさの沿面距離
を外部リード間に確保することができる。また、凸部１
２とこれに隣合う第１、第２及び第３の外部リード３，
４，５の幅広部との間隔は全てほぼ等しいので、樹脂体
８を容易に成形することができる。外部リード３は放熱
板から延びている。 (57) [Summary] (Modified) [Purpose] To secure a large creepage distance between the external leads of an insulator-sealed semiconductor device. [Structure] Between the first and second external leads 3 and 4 and the first
A convex portion 12 formed by changing the shape of the resin body 8 is provided between the third external lead 3 and the third external lead 5 and a sufficient creeping distance can be secured between the external leads. Also, the convex portion 1
2 and the first, second and third external leads 3 and 3 adjacent to them
Since the intervals between the wide portions 4 and 5 are substantially the same, the resin body 8 can be easily molded. The external lead 3 extends from the heat sink.

Description

【考案の詳細な説明】[Detailed description of the device]

【０００１】[0001]

【産業上の利用分野】[Industrial applications]

本考案は、高耐圧半導体装置に適した絶縁物封止形状を有する絶縁物封止半導 体装置に関するものである。 The present invention relates to an insulator-sealed semiconductor device having an insulator-sealed shape suitable for a high voltage semiconductor device.

【０００２】[0002]

【従来の技術】[Prior Art]

図３〜図６は従来の樹脂モールド形パワートランジスタの１例を示し、図３は モールドされた樹脂体のない状態の平面図、図４は図３のＡ−Ａ線に沿う断面図 、図５はモールドされた樹脂体のある状態の平面図、図６は図５のＡ−Ａ線断面 図である。 3 to 6 show an example of a conventional resin-molded power transistor, FIG. 3 is a plan view of a state without a molded resin body, and FIG. 4 is a sectional view taken along the line AA of FIG. 5 is a plan view of a state where the molded resin body is present, and FIG. 6 is a sectional view taken along the line AA of FIG.

【０００３】 裏面をコレクタ電極とするトランジスタチップ（１）は、放熱板（２）の上に 固着され、コレクタリードとなる外部リード（３）は放熱板（２）から延びてい る。外部リード（３）と並列配置された外部リード（４)（５）はそれぞれベー スリードとエミッタリードであり、トランジスタチップ（１）の表面のベース電 極又はエミッタ電極との間はそれぞれ内部リード線（６）（７）で接続されてい る。トランジスタチップ（１）は絶縁物としての樹脂体（８）でモールド（封止 ）され、外部リード（３）（４）（５）は樹脂体（８）から一平面上に並列して 導出されている。図３と図４の破線は樹脂体（８）の外形を示す。外部リード（ ３）（４）（５）は樹脂体（８）からの導出側が幅広部（３a）（４a）（５a） となり、そこから先端側が幅狭部（３b）（４b）（５b）となっている。幅広部 （３a）（４a）（５a）は、外部リードに外力が加えられたとき樹脂体（８）か らの導出部近傍で外部リードが変形し難いように補強するためのものである。幅 広部（３a）（４a）（５a）は、各幅狭部（３b）（４b）（５b）を樹脂体（８） まで延長した部分の両側に張出した形状である。実質的に外部への接続端子とし て使用するため、幅狭部（３b）（４b）（５b）は、かなり幅を狭くして必要な 柔軟性が付与される。外部リード（４）（５）の放熱板（２）に隣接する部分は 、内部リード線（６）（７）を接続する端子部（４c）（５c）となる。A transistor chip (1) having a back surface as a collector electrode is fixed on a heat sink (2), and external leads (3) serving as collector leads extend from the heat sink (2). The external leads (4) and (5) arranged in parallel with the external lead (3) are a base lead and an emitter lead, respectively, and an internal lead wire is provided between the external lead (3) and the base electrode or the emitter electrode on the surface of the transistor chip (1). (6) Connected in (7). The transistor chip (1) is molded (sealed) with a resin body (8) as an insulator, and the external leads (3), (4) and (5) are led out from the resin body (8) in parallel on one plane. ing. The broken lines in FIGS. 3 and 4 show the outer shape of the resin body (8). The outer leads (3), (4), and (5) have wide portions (3a) (4a) (5a) on the lead-out side from the resin body (8), and narrow tip portions (3b) (4b) (5b) from there. Has become. The wide portions (3a), (4a), and (5a) are provided to reinforce the outer leads so that they are not easily deformed in the vicinity of the lead-out portion from the resin body (8) when an external force is applied to the outer leads. The wide portions (3a) (4a) (5a) have a shape in which each narrow portion (3b) (4b) (5b) is extended to both sides of a portion extended to the resin body (8). Since the narrow portions (3b), (4b), and (5b) are substantially used as connection terminals to the outside, the required width is given to the narrow portions (3b), (4b), and (5b). The portions of the outer leads (4) and (5) adjacent to the heat sink (2) become terminal portions (4c) and (5c) for connecting the inner lead wires (6) and (7).

【０００４】[0004]

【考案が解決しようとする課題】[Problems to be solved by the device]

ところで、高耐圧のトランジスタチップ（１）を使用したとき、外部リード（ ３）と（４）の間及び外部リード（３）と（５）の間の樹脂体（８）の表面に沿 っての最短距離、いわゆる外部リード間の沿面距離ｌが問題となる。即ち、高圧 が印加されると外部リード間の樹脂体表面を電流通路とする耐圧不良が起きやす いので、例えば耐圧４００Ｖ以上の製品では外部リード間の沿面距離ｌを２mm以 上は取りたいところである。 しかし、外部リードの幅広部の幅Ｗは、補強部と しての効果を持たせるために小さくするにも限度がある。また、半導体装置の小 形化の要求に対して樹脂体（８）の幅をできるだけ小さくする必要性があり、し かも、外部リードの間隔ｐは、規格上標準的な値であるから、外部リードの間隔 ｐを大きくするにも限度がある。このため、特に小形の樹脂モールド形パワート ランジスタでは、外部リード間の沿面距離ｌが不足して、悪条件下の使用では樹 脂体（８）の表面において耐圧不良を引き起こす恐れがあった。 By the way, when the high breakdown voltage transistor chip (1) is used, along the surface of the resin body (8) between the external leads (3) and (4) and between the external leads (3) and (5). Is the shortest distance, that is, the so-called creepage distance 1 between the external leads. That is, when a high voltage is applied, a withstand voltage failure is likely to occur with the resin body surface between the external leads as a current path, so for example, for products with a withstand voltage of 400 V or higher, the creepage distance 1 between external leads should be 2 mm or more. is there. However, the width W of the wide portion of the external lead is limited to be small in order to have an effect as a reinforcing portion. In addition, it is necessary to make the width of the resin body (8) as small as possible in response to the demand for miniaturization of the semiconductor device. However, since the external lead interval p is a standard value in the standard, There is a limit to increasing the lead spacing p. Therefore, particularly in a small-sized resin-molded power transistor, the creepage distance 1 between the external leads is insufficient, and there is a possibility that the surface of the resin body (8) may have a poor withstand voltage when used under adverse conditions.

【０００５】 本考案は上記従来の欠点を解消するため、外部リード間の沿面距離を大きく取 れる絶縁物封止半導体装置を提供することを目的とする。In order to solve the above-mentioned conventional drawbacks, an object of the present invention is to provide an insulator-sealed semiconductor device capable of increasing the creepage distance between external leads.

【０００６】[0006]

【課題を解決するための手段】[Means for Solving the Problems]

本考案による絶縁物封止半導体装置では、半導体素子の裏面が放熱板の一方の 主面に固着され、第１、第２及び第３の外部リードが第１の外部リードを中心に して並列配置されている。第１の外部リードの一端は放熱板に連結され、第２と 第３の外部リードの一端はそれぞれリード線接続用端子部となって放熱板に隣接 している。第２と第３の外部リードのリード線接続用端子部と半導体素子の表面 はそれぞれ内部リード線で接続される。少なくとも半導体素子と第１、第２及び 第３の外部リードの一端と内部リード線とは絶縁物によって封止されている。 In the insulator-sealed semiconductor device according to the present invention, the back surface of the semiconductor element is fixed to one main surface of the heat sink, and the first, second, and third external leads are arranged in parallel with each other with the first external lead as a center. It is arranged. One end of the first external lead is connected to the heat dissipation plate, and one ends of the second and third external leads serve as lead wire connection terminal portions and are adjacent to the heat dissipation plate. The lead wire connection terminals of the second and third external leads and the surface of the semiconductor element are connected by internal lead wires. At least the semiconductor element, one ends of the first, second, and third external leads and the internal lead wire are sealed with an insulator.

【０００７】 第１、第２及び第３の外部リードは絶縁物からの導出側が幅広部、幅広部から 先端側が幅狭部となっている。第１の外部リードの幅広部は第１の外部リードの 幅狭部を絶縁物まで延長した部分の両側に張出す。第２及び第３の外部リードの 幅広部は、それぞれ第２及び第３の外部リードの幅狭部を絶縁部まで延長した部 分の第１の外部リードに対面する側と反対側にのみ張出す。第２及び第３の外部 リードの第１の外部リードに対面する側は絶縁物から先端側まで直線的に延びて いる。第１、第２及び第３の外部リードは、放熱板の一方の主面よりも放熱板の 他方の主面から離間した位置において絶縁物から導出されている。第１の外部リ ードと第２の外部リードとの間及び第１の外部リードと第３の外部リードとの間 に、第１、第２及び第３の外部リードの導出方向に絶縁物から凸部が突出する。 凸部とこれに隣合う第１、第２及び第３の外部リードの幅広部との間隔は全てほ ぼ等しい。The first, second, and third external leads have a wide portion on the lead-out side from the insulator and a narrow portion on the tip side from the wide portion. The wide portion of the first external lead extends on both sides of the portion where the narrow portion of the first external lead extends to the insulator. The wide parts of the second and third external leads are stretched only on the side opposite to the side facing the first external lead, which is the part where the narrow parts of the second and third external leads are extended to the insulating part. put out. The sides of the second and third outer leads facing the first outer lead extend linearly from the insulator to the tip side. The first, second and third external leads are led out from the insulator at a position separated from one main surface of the heat sink from the other main surface of the heat sink. An insulator is provided between the first outer lead and the second outer lead and between the first outer lead and the third outer lead in the lead-out direction of the first, second and third outer leads. The convex part projects from. The intervals between the convex portion and the wide portions of the first, second and third external leads adjacent to the convex portion are all substantially equal.

【０００８】[0008]

【作用】[Action]

第１の外部リードと第２の外部リードとの間及び第１の外部リードと第３の外 部リードとの間に、絶縁物から凸部が突出するので、十分な大きさの沿面距離を 外部リード間に確保することができる。また、凸部とこれに隣合う第１、第２及 び第３の外部リードの幅広部との間隔は全てほぼ等しいので、絶縁物を容易に成 形することができる。 Since the protrusions protrude from the insulator between the first outer lead and the second outer lead and between the first outer lead and the third outer lead, a sufficient creepage distance is provided. It can be secured between external leads. Further, since the intervals between the convex portion and the wide portions of the first, second and third external leads adjacent to the convex portion are all substantially equal to each other, the insulator can be easily formed.

【０００９】[0009]

【実施例】【Example】

以下、樹脂モールド形パワートランジスタに適用した本考案による絶縁物封止 半導体装置の実施例を図１及び図２について説明する。図１及び図２では図３〜 図６に示す箇所と同一の部分には同一符号を付し、説明を省略する。 An embodiment of an insulator-sealed semiconductor device according to the present invention applied to a resin-molded power transistor will be described below with reference to FIGS. In FIGS. 1 and 2, the same parts as those shown in FIGS. 3 to 6 are designated by the same reference numerals, and the description thereof will be omitted.

【００１０】 中央に位置する第１の外部リード（３）の幅広部（３a）は、幅狭部（３b）を 樹脂体（８）まで延長した部分の両側に張出している。上側に位置する第２の外 部リード（４）の幅広部（４a）は、幅狭部（４b）を樹脂体（８）まで延長した 部分の上側（第１の外部リード（３）に対面する側とは反対側）にのみ張出し、 外部リード（４）の下側面は樹脂体（８）から先端まで直線的に延びている。下 側に位置する第３の外部リード（５）は、第２の外部リード（４）と同一形状で ある。The wide portion (3a) of the first external lead (3) located at the center extends to both sides of the portion where the narrow portion (3b) is extended to the resin body (8). The wide part (4a) of the second outer lead (4) located on the upper side is the upper part (facing the first outer lead (3)) of the part where the narrow part (4b) is extended to the resin body (8). The side surface of the external lead (4) extends linearly from the resin body (8) to the tip. The third outer lead (5) located on the lower side has the same shape as the second outer lead (4).

【００１１】 第１と第２の外部リード（３）と（４）の間及び第１と第３の外部リード（３ ）と（５）の間には、樹脂体（８）の形状変更による凸部（１０）が設けられる 。凸部（１０）とこれに隣合う第１、第２及び第３の外部リード（３）（４）（ ５）の幅広部（３a）（４a）（５a）との間隔は全てほぼ等しい。Between the first and second outer leads (3) and (4) and between the first and third outer leads (3) and (5), the shape of the resin body (8) is changed. A convex portion (10) is provided. The intervals between the convex portion (10) and the wide portions (3a) (4a) (5a) of the first, second and third external leads (3) (4) (5) adjacent thereto are all substantially equal.

【００１２】 第１の外部リード（３）と第２の外部リード（４）との間及び第１の外部リー ド（３）と第３の外部リード（５）との間に、樹脂体（８）から凸部（１０）が 突出するので、十分な大きさの沿面距離ｌを外部リード間に確保することができ る。また、凸部（１０）とこれに隣合う第１、第２及び第３の外部リード（３） （４）（５）の幅広部（３a）（４a）（５a）との間隔は全てほぼ等しいので、 樹脂体（８）を形成する際の金型からの離型が容易となり、樹脂体（８）を容易 に成形することができる。Between the first outer lead (3) and the second outer lead (4) and between the first outer lead (3) and the third outer lead (5), a resin body ( Since the convex portion (10) protrudes from 8), it is possible to secure a sufficient creeping distance 1 between the external leads. Further, the intervals between the convex portion (10) and the wide portions (3a) (4a) (5a) of the first, second and third external leads (3) (4) (5) adjacent to the convex portion (10) are all substantially Since they are the same, the mold release when forming the resin body (8) becomes easy, and the resin body (8) can be easily molded.

【００１３】 この実施例によれば、外部リード（４）（５）の幅広部（４a）（５a）の形状 を直線状の外部リードと見なせる範囲で変更したことによっても、直線状の外部 リードのもつ取扱いの容易さを損なうことなく外部リード間の沿面距離ｌが大き く取られている。１例として、外部リードの間隔ｐが２.４５mm、外部リードの 幅広部の幅Ｗが１.４mm、外部リードの幅狭部の幅が０.７mm、凸部（１０）の長 さを０.６mmとすると、外部リード間の沿面距離ｌは２.０９mm（外部リード（４ ）（５）の形状の変更がないときは１.７４mm）となる。同じ条件で従来構造で あれば、ｌは１.１４mmである。According to this embodiment, the shape of the wide portions (4a), (5a) of the external leads (4), (5) is changed within a range that can be regarded as a linear external lead. The creepage distance l between the external leads is large without impairing the ease of handling of the external leads. As an example, the distance p between the outer leads is 2.45 mm, the width W of the wide portion of the outer lead is 1.4 mm, the width of the narrow portion of the outer lead is 0.7 mm, and the length of the convex portion (10) is 0. If it is set to 0.6 mm, the creepage distance 1 between the external leads becomes 2.09 mm (1.74 mm when the shape of the external leads (4) and (5) is not changed). If the conventional structure is used under the same conditions, l is 1.14 mm.

【００１４】 以上、実施例について説明したように、本考案によれば外部リード間の沿面距 離を大きくして、絶縁物封止半導体装置の高耐圧化が可能となる。As described above with reference to the embodiments, according to the present invention, it is possible to increase the creepage distance between the external leads and increase the breakdown voltage of the insulator-sealed semiconductor device.

【図面の簡単な説明】[Brief description of drawings]

【図１】本考案に係る絶縁封止半導体装置の平面図FIG. 1 is a plan view of an insulation-sealed semiconductor device according to the present invention.

【図２】図１のＡ−Ａ線に沿う断面図FIG. 2 is a sectional view taken along the line AA of FIG.

【図３】封止樹脂体のない従来の絶縁物封止半導体装置
の平面図FIG. 3 is a plan view of a conventional insulator-sealed semiconductor device without a sealing resin body.

【図４】図３のＡ−Ａ線に沿う断面図4 is a sectional view taken along the line AA of FIG.

【図５】封止樹脂体を有する従来の絶縁物封止半導体装
置の平面図FIG. 5 is a plan view of a conventional insulator-sealed semiconductor device having a sealing resin body.

【図６】図５のＡ−Ａ線に沿う断面図6 is a sectional view taken along the line AA of FIG.

【符号の説明】[Explanation of symbols]

１．．．パワートランジスタチップ（半導体素子）、
２．．．放熱板、 ３、４、５．．．外部リード、 ３
ａ、４ａ、５ａ．．．外部リードの幅広部、３ｂ、４
ｂ、５ｂ．．．外部リードの幅狭部、 ４ｃ、５
ｃ．．．外部リードの内側リード線用端子部、 ６、
７．．．内部リード線、８．．．樹脂体（絶縁物）、
９．．．連結部材残存部、 １０．．．樹脂体の凸部1. ． ． Power transistor chip (semiconductor element),
2. ． ． Heat sink, 3, 4, 5. ． ． External lead, 3
a, 4a, 5a. ． ． Wide part of external lead, 3b, 4
b, 5b. ． ． Narrow part of external lead, 4c, 5
c. ． ． Inner lead wire terminal of external lead, 6,
7. ． ． Internal lead wire, 8. ． ． Resin body (insulator),
9. ． ． 10. Remaining portion of connecting member, ． ． Convex part of resin body

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項１】 半導体素子の裏面が放熱板の一方の主面
に固着され、第１、第２及び第３の外部リードが第１の
外部リードを中心にして並列配置され、前記第１の外部
リードの一端は前記放熱板に連結され、前記第２と第３
の外部リードの一端はそれぞれリード線接続用端子部と
なって前記放熱板に隣接し、前記第２と第３の外部リー
ドの前記リード線接続用端子部と前記半導体素子の表面
はそれぞれ内部リード線で接続され、少なくとも前記半
導体素子と前記第１、第２及び第３の外部リードの前記
一端と前記内部リード線とが絶縁物によって封止されて
いる絶縁物封止半導体装置において、 前記第１、第２及び第３の外部リードは前記絶縁物から
の導出側が幅広部、前記幅広部から先端側が幅狭部とな
り、 前記第１の外部リードの幅広部は前記第１の外部リード
の幅狭部を前記絶縁物まで延長した部分の両側に張出
し、 前記第２及び第３の外部リードの幅広部は、それぞれ前
記第２及び第３の外部リードの幅狭部を前記絶縁部まで
延長した部分の前記第１の外部リードに対面する側と反
対側にのみ張出し、 前記第２及び第３の外部リードの前記第１の外部リード
に対面する側は前記絶縁物から前記先端側まで直線的に
延びた形状とし、 前記第１、第２及び第３の外部リードは、前記放熱板の
一方の主面よりも前記放熱板の他方の主面から離間した
位置において前記絶縁物から導出され、 前記第１の外部リードと前記第２の外部リードとの間及
び前記第１の外部リードと前記第３の外部リードとの間
に、前記第１、第２及び第３の外部リードの導出方向に
前記絶縁物から凸部が突出し、 前記凸部とこれに隣合う前記第１、第２及び第３の外部
リードの幅広部との間隔は全てほぼ等しいことを特徴と
する絶縁物封止半導体装置。1. A back surface of a semiconductor element is fixed to one main surface of a heat dissipation plate, and first, second, and third external leads are arranged in parallel around a first external lead, and the first external lead is provided. One end of the external lead is connected to the heat dissipation plate, and the second and third
One end of each of the external leads serves as a lead wire connection terminal portion and is adjacent to the heat dissipation plate, and the lead wire connection terminal portions of the second and third external leads and the surface of the semiconductor element are internal leads. An insulator-encapsulated semiconductor device in which at least the semiconductor element, the one ends of the first, second, and third external leads and the inner lead wire are connected by an insulator and are connected by a wire; The first, second, and third external leads have a wide portion on the lead-out side from the insulator and a narrow portion on the tip side from the wide portion, and the wide portion of the first external lead has a width of the first external lead. The narrow portion extends to both sides of the portion extended to the insulator, and the wide portions of the second and third external leads extend the narrow portions of the second and third external leads to the insulating portion, respectively. Part of the first Part of the second and third external leads facing the first external lead is a shape that extends linearly from the insulator to the tip end side, The first, second and third external leads are led out from the insulator at a position separated from one main surface of the heat dissipation plate from the other main surface of the heat dissipation plate, and the first external lead is provided. And the second outer lead, and between the first outer lead and the third outer lead, projecting from the insulator in the lead-out direction of the first, second, and third outer leads. In the insulator-encapsulated semiconductor device, the projecting portion is formed, and the intervals between the convex portion and the wide portions of the first, second, and third external leads adjacent thereto are all substantially equal.
JP2570892U 1992-04-21 1992-04-21 Insulator-sealed semiconductor device Pending JPH0548356U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2570892U JPH0548356U (en) 1992-04-21 1992-04-21 Insulator-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2570892U JPH0548356U (en) 1992-04-21 1992-04-21 Insulator-sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPH0548356U true JPH0548356U (en) 1993-06-25

Family

ID=12173292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2570892U Pending JPH0548356U (en) 1992-04-21 1992-04-21 Insulator-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPH0548356U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2899754A3 (en) * 2014-01-27 2015-10-07 Samsung Electronics Co., Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2899754A3 (en) * 2014-01-27 2015-10-07 Samsung Electronics Co., Ltd Semiconductor device
US9711435B2 (en) 2014-01-27 2017-07-18 Samsung Electronics Co., Ltd. Semiconductor device

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