JPH04146631A - 混成集積回路 - Google Patents
混成集積回路Info
- Publication number
- JPH04146631A JPH04146631A JP2271044A JP27104490A JPH04146631A JP H04146631 A JPH04146631 A JP H04146631A JP 2271044 A JP2271044 A JP 2271044A JP 27104490 A JP27104490 A JP 27104490A JP H04146631 A JPH04146631 A JP H04146631A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- integrated circuit
- hybrid integrated
- conductor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000010931 gold Substances 0.000 claims abstract description 5
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 229910000679 solder Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 239000004593 Epoxy Substances 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000011368 organic material Substances 0.000 abstract description 3
- 238000005476 soldering Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 2
- 238000007906 compression Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 241001474791 Proboscis Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は混成集積回路の構造に関し、特に搭載する部品
の接続方法に関する。
の接続方法に関する。
従来より混成集積回路は半導体集積回路、絶縁性基板上
に一体的に形成されるか搭載される抵抗或いはコンデン
サを別途の部品として単独で或いは複数組合せて絶縁性
基板上で相互に接続することにより作られており、絶縁
性基板についてはその表裏を有効に利用することにより
混成集積回路の実装密度を上げる工夫をして来ているが
、その場合でも搭載する面が両面となる為に他面に部品
が既に搭載されている場合の搭載方法或いは部品端子の
接続方法は制約を受ける。
に一体的に形成されるか搭載される抵抗或いはコンデン
サを別途の部品として単独で或いは複数組合せて絶縁性
基板上で相互に接続することにより作られており、絶縁
性基板についてはその表裏を有効に利用することにより
混成集積回路の実装密度を上げる工夫をして来ているが
、その場合でも搭載する面が両面となる為に他面に部品
が既に搭載されている場合の搭載方法或いは部品端子の
接続方法は制約を受ける。
上述した従来の構造では混成集積回路を構成するだめに
半導体部品と抵抗コンデンサ等の受動部分を別個の部分
として組合せていたので、絶縁性基板の表裏を使うだけ
では全体の面積が大きくなるという欠点があった。
半導体部品と抵抗コンデンサ等の受動部分を別個の部分
として組合せていたので、絶縁性基板の表裏を使うだけ
では全体の面積が大きくなるという欠点があった。
第3図は従来から実施して来た混成集積回路の構造を示
す断面図である。第3図に於いて1は電気的に絶縁性を
示すガラスエポキシ系等の有機材料或いはアルミナセラ
ミック等の無機材料からなる基板であり、その基板1の
上に抵抗体3.配線用の導体2が形成されている。Si
の単結晶等をペースとした半導体集積回路(以下IC)
4は基板1の上に設けられたICd用のマウントランド
5の上に塗布された接着剤6等により固定されている。
す断面図である。第3図に於いて1は電気的に絶縁性を
示すガラスエポキシ系等の有機材料或いはアルミナセラ
ミック等の無機材料からなる基板であり、その基板1の
上に抵抗体3.配線用の導体2が形成されている。Si
の単結晶等をペースとした半導体集積回路(以下IC)
4は基板1の上に設けられたICd用のマウントランド
5の上に塗布された接着剤6等により固定されている。
又IC4は周囲の電子部品例えば抵抗2と電気的に接続
する為にボンディンダ用の金等の金属細線7により接続
が為さ九ている。
する為にボンディンダ用の金等の金属細線7により接続
が為さ九ている。
本発明による混成集積回路はシリコンチップ表裏にそれ
ぞれ半導体集積回路及び受動部品を備えた電子部品を有
している。
ぞれ半導体集積回路及び受動部品を備えた電子部品を有
している。
次に本発明について図面を参照して説明する。
第1図は本発明の一実施例を示す断面図である。
1は電気的に絶縁性を示すガラスエポキシ系等の有機材
料或いはアルミナセラミック等の無機材料からなる基板
を示し、その上に接続及び配線用の導体2が形成されて
いる。11は基板1の上に搭載された電子部品を示す。
料或いはアルミナセラミック等の無機材料からなる基板
を示し、その上に接続及び配線用の導体2が形成されて
いる。11は基板1の上に搭載された電子部品を示す。
電子部品11の表面側にはトランジスタ等の能動部分2
1が形成され絶縁層22.23により保護されると共に
絶縁層22の開口部を通して導体層24により電子部品
11内部での配線が為されると共に外部へ接続する為の
電極25が形成される。電子部品11の裏面側には絶縁
層31の上に抵抗体層32さらに導体層33が形成され
ている。
1が形成され絶縁層22.23により保護されると共に
絶縁層22の開口部を通して導体層24により電子部品
11内部での配線が為されると共に外部へ接続する為の
電極25が形成される。電子部品11の裏面側には絶縁
層31の上に抵抗体層32さらに導体層33が形成され
ている。
電子部品11は電極25を介して電極2とはんだ付は或
いは熱圧着等の方法により接続された後、抵抗体層32
の上に形成された導体層33と電極2′が金等の金属細
線34により接続される。
いは熱圧着等の方法により接続された後、抵抗体層32
の上に形成された導体層33と電極2′が金等の金属細
線34により接続される。
第2図は本発明の実施例2の断面図である。本例では予
め配列されて保護板35によりその間隔、向きが一定に
保たれそれぞれの両端が電極2′33に平行になるよう
に曲げられさらに予備的にはんだ或いは金等の接続用電
極37が付着されたリード列36をはんだリフロー又は
熱圧着等により、電極2’、33に接続した状態を示し
ている。
め配列されて保護板35によりその間隔、向きが一定に
保たれそれぞれの両端が電極2′33に平行になるよう
に曲げられさらに予備的にはんだ或いは金等の接続用電
極37が付着されたリード列36をはんだリフロー又は
熱圧着等により、電極2’、33に接続した状態を示し
ている。
この場合は電子部品14表面側の接続が一括で可能とな
るばかりではなく、反対側の接続についても一括又は電
子部品11の各辺の各リード列毎に一括で接続できる利
点がある。
るばかりではなく、反対側の接続についても一括又は電
子部品11の各辺の各リード列毎に一括で接続できる利
点がある。
以上説明したように本発明の混成集積回路は搭載する電
子部品の両面に能動部分、受動部分を持つことにより、
混成集積回路の使用部品数を減らすと共にその面積を小
さくすることが可能であるばかりではなく搭載部品の接
続に掛る作業時間を短縮できる効果がある。
子部品の両面に能動部分、受動部分を持つことにより、
混成集積回路の使用部品数を減らすと共にその面積を小
さくすることが可能であるばかりではなく搭載部品の接
続に掛る作業時間を短縮できる効果がある。
尚実施例では電子部品裏面に形成する受動部分の例に抵
抗のみを示したがコンデンサ或いはコイルとなるべき部
分を作ることが可能なことは熱論である。
抗のみを示したがコンデンサ或いはコイルとなるべき部
分を作ることが可能なことは熱論である。
第1図および第2図はそれぞれ本発明による混成集積回
路の実施例を示す断面図であり、第3図は従来より実施
されている混成集積回路の構造を示す断面図である。 l・・・・・・基板、2,2′・・・・・・導体、3・
・・・・・抵抗体、4・・・・・・ICl3・・・・・
・マウントランド、6・・・・・・接着剤、7・・・・
・・金細線、11・・・・・・電子部品、21・・・・
・・能動部分、22.23・・・・・・絶縁層、24・
・・・・・導体層、25・・・・・・電極、31・・・
・・・絶縁層、32・・・・・・抵抗体層、33・・・
・・・導体層、34・・・・・・金細線、35・・・・
・保持板、36・・・・・・リード列、37・・・・・
・接続用電極。 代理人 弁理士 内 原 晋 卒 ツ アー、、p /l−雷)卯シ 2/−]障却斧 25−1電秒 31−・−詰妹層 34− 釦り、tdL 2.2’−導林 22.23 虻絡暫 一抵瓶停層 導体層 矩gk 弗 基板 電)降乙 伯勤舒全 4E′pP 肴鴬所 2.2′ 22、:B わ 此舛ル 醪讃希 翠恰僧 33−一−g1所 #vf板 36−一一り−1−列 吻朗攬極
路の実施例を示す断面図であり、第3図は従来より実施
されている混成集積回路の構造を示す断面図である。 l・・・・・・基板、2,2′・・・・・・導体、3・
・・・・・抵抗体、4・・・・・・ICl3・・・・・
・マウントランド、6・・・・・・接着剤、7・・・・
・・金細線、11・・・・・・電子部品、21・・・・
・・能動部分、22.23・・・・・・絶縁層、24・
・・・・・導体層、25・・・・・・電極、31・・・
・・・絶縁層、32・・・・・・抵抗体層、33・・・
・・・導体層、34・・・・・・金細線、35・・・・
・保持板、36・・・・・・リード列、37・・・・・
・接続用電極。 代理人 弁理士 内 原 晋 卒 ツ アー、、p /l−雷)卯シ 2/−]障却斧 25−1電秒 31−・−詰妹層 34− 釦り、tdL 2.2’−導林 22.23 虻絡暫 一抵瓶停層 導体層 矩gk 弗 基板 電)降乙 伯勤舒全 4E′pP 肴鴬所 2.2′ 22、:B わ 此舛ル 醪讃希 翠恰僧 33−一−g1所 #vf板 36−一一り−1−列 吻朗攬極
Claims (1)
- 【特許請求の範囲】 1、表裏両面に能動部分および受動部分を有する電子部
品の、絶縁性基板上の導体部分にあい対する面の電極と
、絶縁性基板上の導体部分とを接続した後、該電子部分
の他の面にある電極と絶縁性基板上の導体部分とを接続
したことを特徴とする混成集積回路。 2、あい対する電極どうしの接続をバンプ形式の電極に
よるハンダリフロー又は熱圧着接続により行ない、電子
部品の他の面側の接続を金又はアルミニュウム等の細線
によるボンディングにより接続したことを特徴とする特
許請求の範囲第1項記載の混成集積回路。 3、電子部品の他の面側の接続を予め形成され、間隔・
方向を一定に保持されたリード列を介して行なうことを
特徴とする特許請求の範囲第2項記載の混成集積回路。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2271044A JPH04146631A (ja) | 1990-10-09 | 1990-10-09 | 混成集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2271044A JPH04146631A (ja) | 1990-10-09 | 1990-10-09 | 混成集積回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04146631A true JPH04146631A (ja) | 1992-05-20 |
Family
ID=17494623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2271044A Pending JPH04146631A (ja) | 1990-10-09 | 1990-10-09 | 混成集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04146631A (ja) |
-
1990
- 1990-10-09 JP JP2271044A patent/JPH04146631A/ja active Pending
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