JPH0410747B2 - - Google Patents
Info
- Publication number
- JPH0410747B2 JPH0410747B2 JP59102866A JP10286684A JPH0410747B2 JP H0410747 B2 JPH0410747 B2 JP H0410747B2 JP 59102866 A JP59102866 A JP 59102866A JP 10286684 A JP10286684 A JP 10286684A JP H0410747 B2 JPH0410747 B2 JP H0410747B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion region
- diffusion
- wiring
- opening
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59102866A JPS60246667A (ja) | 1984-05-22 | 1984-05-22 | 相補型ｍｏｓ半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59102866A JPS60246667A (ja) | 1984-05-22 | 1984-05-22 | 相補型ｍｏｓ半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60246667A JPS60246667A (ja) | 1985-12-06 |
| JPH0410747B2 true JPH0410747B2 (enExample) | 1992-02-26 |
Family
ID=14338827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59102866A Granted JPS60246667A (ja) | 1984-05-22 | 1984-05-22 | 相補型ｍｏｓ半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60246667A (enExample) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5848960A (ja) * | 1982-09-03 | 1983-03-23 | Hitachi Ltd | 半導体装置 |
-
1984
- 1984-05-22 JP JP59102866A patent/JPS60246667A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60246667A (ja) | 1985-12-06 |
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