JPS60246667A - 相補型ｍｏｓ半導体装置 - Google Patents

相補型ｍｏｓ半導体装置

Info

Publication number
JPS60246667A
JPS60246667A JP59102866A JP10286684A JPS60246667A JP S60246667 A JPS60246667 A JP S60246667A JP 59102866 A JP59102866 A JP 59102866A JP 10286684 A JP10286684 A JP 10286684A JP S60246667 A JPS60246667 A JP S60246667A
Authority
JP
Japan
Prior art keywords
semiconductor device
opening
diffusion region
conplementary
type mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59102866A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0410747B2 (enExample
Inventor
Mineo Hayashi
林　峰雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59102866A priority Critical patent/JPS60246667A/ja
Publication of JPS60246667A publication Critical patent/JPS60246667A/ja
Publication of JPH0410747B2 publication Critical patent/JPH0410747B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59102866A 1984-05-22 1984-05-22 相補型ｍｏｓ半導体装置 Granted JPS60246667A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59102866A JPS60246667A (ja) 1984-05-22 1984-05-22 相補型ｍｏｓ半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59102866A JPS60246667A (ja) 1984-05-22 1984-05-22 相補型ｍｏｓ半導体装置

Publications (2)

Publication Number Publication Date
JPS60246667A true JPS60246667A (ja) 1985-12-06
JPH0410747B2 JPH0410747B2 (enExample) 1992-02-26

Family

ID=14338827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59102866A Granted JPS60246667A (ja) 1984-05-22 1984-05-22 相補型ｍｏｓ半導体装置

Country Status (1)

Country Link
JP (1) JPS60246667A (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848960A (ja) * 1982-09-03 1983-03-23 Hitachi Ltd 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848960A (ja) * 1982-09-03 1983-03-23 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
JPH0410747B2 (enExample) 1992-02-26

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