JPH038039B2 - - Google Patents

Info

Publication number
JPH038039B2
JPH038039B2 JP10948084A JP10948084A JPH038039B2 JP H038039 B2 JPH038039 B2 JP H038039B2 JP 10948084 A JP10948084 A JP 10948084A JP 10948084 A JP10948084 A JP 10948084A JP H038039 B2 JPH038039 B2 JP H038039B2
Authority
JP
Japan
Prior art keywords
fuse
blown
control signal
circuit
redundant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP10948084A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60254500A (ja
Inventor
Keizo Aoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59109480A priority Critical patent/JPS60254500A/ja
Publication of JPS60254500A publication Critical patent/JPS60254500A/ja
Publication of JPH038039B2 publication Critical patent/JPH038039B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP59109480A 1984-05-31 1984-05-31 ヒユ−ズを有する半導体集積回路 Granted JPS60254500A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59109480A JPS60254500A (ja) 1984-05-31 1984-05-31 ヒユ−ズを有する半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59109480A JPS60254500A (ja) 1984-05-31 1984-05-31 ヒユ−ズを有する半導体集積回路

Publications (2)

Publication Number Publication Date
JPS60254500A JPS60254500A (ja) 1985-12-16
JPH038039B2 true JPH038039B2 (enExample) 1991-02-05

Family

ID=14511309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59109480A Granted JPS60254500A (ja) 1984-05-31 1984-05-31 ヒユ−ズを有する半導体集積回路

Country Status (1)

Country Link
JP (1) JPS60254500A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63299139A (ja) * 1987-05-28 1988-12-06 Nec Corp ヒュ−ズ溶断方法
JPH10335463A (ja) * 1997-05-29 1998-12-18 Nec Corp 半導体集積回路
US7659497B2 (en) * 2005-12-06 2010-02-09 International Business Machines Corporation On demand circuit function execution employing optical sensing

Also Published As

Publication number Publication date
JPS60254500A (ja) 1985-12-16

Similar Documents

Publication Publication Date Title
US6150868A (en) Anti-fuse programming circuit
EP0095721B1 (en) Semiconductor memory device
EP0355768B1 (en) Semiconductor memory cells and semiconductor memory device employing the semiconductor memory cells
TW544683B (en) Semiconductor device
US6108261A (en) Repair circuit for redundancy circuit with anti-fuse
US4660179A (en) Semiconductor memory device with switching for redundant cells
US6144247A (en) Anti-fuse programming circuit using variable voltage generator
JPH05307898A (ja) 半導体メモリ装置
US4794568A (en) Redundancy circuit for use in a semiconductor memory device
KR910005596B1 (ko) 용단 및 비용단퓨즈를 사용한 정보기억회로
US6133778A (en) Anti-fuse programming circuit with cross-coupled feedback loop
JPH08330944A (ja) 半導体デバイス
KR900000171B1 (ko) 퓨우즈형 정보기억회로를 갖춘 반도체집적회로장치
US4571706A (en) Semiconductor memory device
JPH0324000B2 (enExample)
JPH038039B2 (enExample)
JPS6350799B2 (enExample)
US7482854B2 (en) E-fuse circuit using leakage current path of transistor
US6236241B1 (en) Redundant decoder having fuse-controlled transistor
JPH0219560B2 (enExample)
JPS58105496A (ja) 半導体集積回路
JPH07272497A (ja) 半導体メモリ装置
JP3397357B2 (ja) 半導体メモリ装置および半導体メモリの冗長アドレスプログラム回路
JP2550214B2 (ja) リダンダンシー回路の使用状態検出方法
JPH11203888A (ja) 半導体記憶装置、および半導体記憶装置におけるヒューズの切断不良判定方法