JPH0379320B2 - - Google Patents
Info
- Publication number
- JPH0379320B2 JPH0379320B2 JP4560285A JP4560285A JPH0379320B2 JP H0379320 B2 JPH0379320 B2 JP H0379320B2 JP 4560285 A JP4560285 A JP 4560285A JP 4560285 A JP4560285 A JP 4560285A JP H0379320 B2 JPH0379320 B2 JP H0379320B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- melt
- crucible
- pulling
- segregation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 85
- 239000012535 impurity Substances 0.000 claims description 43
- 239000000155 melt Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 24
- 239000007788 liquid Substances 0.000 claims description 15
- 230000008018 melting Effects 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 238000002109 crystal growth method Methods 0.000 claims description 3
- 238000005204 segregation Methods 0.000 description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 230000004323 axial length Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4560285A JPS61205691A (ja) | 1985-03-06 | 1985-03-06 | 結晶成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4560285A JPS61205691A (ja) | 1985-03-06 | 1985-03-06 | 結晶成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61205691A JPS61205691A (ja) | 1986-09-11 |
| JPH0379320B2 true JPH0379320B2 (ko) | 1991-12-18 |
Family
ID=12723898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4560285A Granted JPS61205691A (ja) | 1985-03-06 | 1985-03-06 | 結晶成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61205691A (ko) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63252989A (ja) * | 1987-04-08 | 1988-10-20 | Sumitomo Electric Ind Ltd | 引上法による半導体単結晶の製造方法 |
| JPH0532480A (ja) * | 1991-02-20 | 1993-02-09 | Sumitomo Metal Ind Ltd | 結晶成長方法 |
| DE4204777A1 (de) * | 1991-02-20 | 1992-10-08 | Sumitomo Metal Ind | Vorrichtung und verfahren zum zuechten von einkristallen |
| JP2606046B2 (ja) * | 1992-04-16 | 1997-04-30 | 住友金属工業株式会社 | 単結晶引き上げ時における単結晶酸素濃度の制御方法 |
| JPH0680495A (ja) * | 1992-06-16 | 1994-03-22 | Sumitomo Metal Ind Ltd | 結晶成長方法 |
| JPH06263583A (ja) * | 1993-03-15 | 1994-09-20 | Sumitomo Sitix Corp | 結晶成長方法 |
| JP2640315B2 (ja) * | 1993-03-22 | 1997-08-13 | 住友シチックス株式会社 | シリコン単結晶の製造方法 |
| JPH06279170A (ja) * | 1993-03-29 | 1994-10-04 | Sumitomo Sitix Corp | 単結晶の製造方法及びその装置 |
| JPH07267776A (ja) * | 1994-03-31 | 1995-10-17 | Sumitomo Sitix Corp | 結晶成長方法 |
-
1985
- 1985-03-06 JP JP4560285A patent/JPS61205691A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61205691A (ja) | 1986-09-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |