JPH03792B2 - - Google Patents
Info
- Publication number
- JPH03792B2 JPH03792B2 JP27393586A JP27393586A JPH03792B2 JP H03792 B2 JPH03792 B2 JP H03792B2 JP 27393586 A JP27393586 A JP 27393586A JP 27393586 A JP27393586 A JP 27393586A JP H03792 B2 JPH03792 B2 JP H03792B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- drain
- insulated gate
- channel
- static induction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000006698 induction Effects 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 24
- 230000003068 static effect Effects 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 230000000694 effects Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27393586A JPS63128675A (ja) | 1986-11-19 | 1986-11-19 | 切り込み型絶縁ゲ−ト静電誘導トランジスタ |
DE3752273T DE3752273T2 (de) | 1986-11-19 | 1987-11-10 | Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung |
EP95114168A EP0690513B1 (de) | 1986-11-19 | 1987-11-10 | Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung |
EP87310185A EP0268472B1 (de) | 1986-11-19 | 1987-11-18 | Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung |
EP92101661A EP0481965B1 (de) | 1986-11-19 | 1987-11-18 | Verfahren zur Herstellung der Statischen Induktionstransistoren mit isoliertem Gatter in einer eingeschnitteten Stufe |
DE3752255T DE3752255T2 (de) | 1986-11-19 | 1987-11-18 | Statische Induktiontransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung |
DE87310185T DE3789003T2 (de) | 1986-11-19 | 1987-11-18 | Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung. |
DE3752215T DE3752215T2 (de) | 1986-11-19 | 1987-11-18 | Verfahren zur Herstellung der Statischen Induktionstransistoren mit isoliertem Gatter in einer eingeschnitteten Stufe |
EP93101675A EP0547030B1 (de) | 1986-11-19 | 1987-11-18 | Statische Induktiontransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung |
US07/752,934 US5115287A (en) | 1986-11-19 | 1991-08-30 | Step-cut insulated gate static induction transistors and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27393586A JPS63128675A (ja) | 1986-11-19 | 1986-11-19 | 切り込み型絶縁ゲ−ト静電誘導トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63128675A JPS63128675A (ja) | 1988-06-01 |
JPH03792B2 true JPH03792B2 (de) | 1991-01-08 |
Family
ID=17534620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27393586A Granted JPS63128675A (ja) | 1986-11-19 | 1986-11-19 | 切り込み型絶縁ゲ−ト静電誘導トランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63128675A (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5169795A (en) * | 1989-02-28 | 1992-12-08 | Small Power Communication Systems Research Laboratories Co., Ltd. | Method of manufacturing step cut type insulated gate SIT having low-resistance electrode |
-
1986
- 1986-11-19 JP JP27393586A patent/JPS63128675A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS63128675A (ja) | 1988-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |