JPH0373093B2 - - Google Patents

Info

Publication number
JPH0373093B2
JPH0373093B2 JP60257283A JP25728385A JPH0373093B2 JP H0373093 B2 JPH0373093 B2 JP H0373093B2 JP 60257283 A JP60257283 A JP 60257283A JP 25728385 A JP25728385 A JP 25728385A JP H0373093 B2 JPH0373093 B2 JP H0373093B2
Authority
JP
Japan
Prior art keywords
target
diameter
ray
thin wire
rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60257283A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62117246A (ja
Inventor
Toshihisa Tomie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60257283A priority Critical patent/JPS62117246A/ja
Publication of JPS62117246A publication Critical patent/JPS62117246A/ja
Publication of JPH0373093B2 publication Critical patent/JPH0373093B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP60257283A 1985-11-15 1985-11-15 高輝度ｘ線発生用標的 Granted JPS62117246A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60257283A JPS62117246A (ja) 1985-11-15 1985-11-15 高輝度ｘ線発生用標的

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60257283A JPS62117246A (ja) 1985-11-15 1985-11-15 高輝度ｘ線発生用標的

Publications (2)

Publication Number Publication Date
JPS62117246A JPS62117246A (ja) 1987-05-28
JPH0373093B2 true JPH0373093B2 (enExample) 1991-11-20

Family

ID=17304222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60257283A Granted JPS62117246A (ja) 1985-11-15 1985-11-15 高輝度ｘ線発生用標的

Country Status (1)

Country Link
JP (1) JPS62117246A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04275894A (ja) * 1991-02-07 1992-10-01 Mitsubishi Electric Corp 産業ロボットの旋回装置
WO2000019496A1 (en) * 1998-09-28 2000-04-06 Hitachi, Ltd. Laser plasma x-ray generator, semiconductor aligner having the generator, and semiconductor exposure method
JP4005551B2 (ja) * 2003-03-19 2007-11-07 日本電信電話株式会社 Ｘ線及び高エネルギー粒子発生装置とその発生方法
EP1837897A4 (en) 2005-01-12 2008-04-16 Nikon Corp LASER PLASMA EUV LIGHT SOURCE, TARGET MEMBER, MANUFACTURING PROCESS FOR A TARGET MEMBER, TARGET PROCESSING METHOD AND EUV EXPOSURE SYSTEM

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3342531A1 (de) * 1983-11-24 1985-06-05 Max Planck Gesellschaft Verfahren und einrichtung zum erzeugen von kurz dauernden, intensiven impulsen elektromagnetischer strahlung im wellenlaengenbereich unter etwa 100 nm

Also Published As

Publication number Publication date
JPS62117246A (ja) 1987-05-28

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term