JPH0366815B2 - - Google Patents
Info
- Publication number
- JPH0366815B2 JPH0366815B2 JP57165350A JP16535082A JPH0366815B2 JP H0366815 B2 JPH0366815 B2 JP H0366815B2 JP 57165350 A JP57165350 A JP 57165350A JP 16535082 A JP16535082 A JP 16535082A JP H0366815 B2 JPH0366815 B2 JP H0366815B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- contact
- insulating film
- capacitor
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 claims description 45
- 239000003990 capacitor Substances 0.000 claims description 44
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 229910052814 silicon oxide Inorganic materials 0.000 description 22
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16535082A JPS5954257A (ja) | 1982-09-22 | 1982-09-22 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16535082A JPS5954257A (ja) | 1982-09-22 | 1982-09-22 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5954257A JPS5954257A (ja) | 1984-03-29 |
| JPH0366815B2 true JPH0366815B2 (zh) | 1991-10-18 |
Family
ID=15810684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16535082A Granted JPS5954257A (ja) | 1982-09-22 | 1982-09-22 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5954257A (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61272963A (ja) * | 1985-05-28 | 1986-12-03 | Toshiba Corp | 半導体装置 |
| JP2740177B2 (ja) * | 1988-01-19 | 1998-04-15 | 三洋電機株式会社 | 半導体集積回路 |
| JP2743369B2 (ja) * | 1988-03-14 | 1998-04-22 | ソニー株式会社 | 半導体装置とその製造方法 |
| JPH06105761B2 (ja) * | 1988-05-10 | 1994-12-21 | 富士電機株式会社 | 集積回路装置の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5754360A (ja) * | 1980-09-18 | 1982-03-31 | Nec Corp | Handotaisochinoseizohoho |
-
1982
- 1982-09-22 JP JP16535082A patent/JPS5954257A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5754360A (ja) * | 1980-09-18 | 1982-03-31 | Nec Corp | Handotaisochinoseizohoho |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5954257A (ja) | 1984-03-29 |
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