JPH036652B2 - - Google Patents
Info
- Publication number
- JPH036652B2 JPH036652B2 JP55142246A JP14224680A JPH036652B2 JP H036652 B2 JPH036652 B2 JP H036652B2 JP 55142246 A JP55142246 A JP 55142246A JP 14224680 A JP14224680 A JP 14224680A JP H036652 B2 JPH036652 B2 JP H036652B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- substrate
- hydrogen
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- H10P14/24—
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- H10P14/3411—
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- H10P14/3418—
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- H10P14/3421—
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- H10P14/3442—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55142246A JPS5766625A (en) | 1980-10-11 | 1980-10-11 | Manufacture of film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55142246A JPS5766625A (en) | 1980-10-11 | 1980-10-11 | Manufacture of film |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61310495A Division JPS62169325A (ja) | 1986-12-24 | 1986-12-24 | 被膜作製方法 |
| JP61310494A Division JPS62169324A (ja) | 1986-12-24 | 1986-12-24 | 被膜作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5766625A JPS5766625A (en) | 1982-04-22 |
| JPH036652B2 true JPH036652B2 (en:Method) | 1991-01-30 |
Family
ID=15310837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55142246A Granted JPS5766625A (en) | 1980-10-11 | 1980-10-11 | Manufacture of film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5766625A (en:Method) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59159167A (ja) * | 1983-03-01 | 1984-09-08 | Zenko Hirose | アモルフアスシリコン膜の形成方法 |
| DE3429899A1 (de) * | 1983-08-16 | 1985-03-07 | Canon K.K., Tokio/Tokyo | Verfahren zur bildung eines abscheidungsfilms |
| US4759947A (en) * | 1984-10-08 | 1988-07-26 | Canon Kabushiki Kaisha | Method for forming deposition film using Si compound and active species from carbon and halogen compound |
| US4726963A (en) * | 1985-02-19 | 1988-02-23 | Canon Kabushiki Kaisha | Process for forming deposited film |
| JPS61223756A (ja) * | 1985-03-28 | 1986-10-04 | Canon Inc | 複写装置 |
| US4818563A (en) * | 1985-02-21 | 1989-04-04 | Canon Kabushiki Kaisha | Process for forming deposited film |
| US5244698A (en) * | 1985-02-21 | 1993-09-14 | Canon Kabushiki Kaisha | Process for forming deposited film |
| US4853251A (en) * | 1985-02-22 | 1989-08-01 | Canon Kabushiki Kaisha | Process for forming deposited film including carbon as a constituent element |
| US4801468A (en) * | 1985-02-25 | 1989-01-31 | Canon Kabushiki Kaisha | Process for forming deposited film |
| JP2537175B2 (ja) * | 1985-03-27 | 1996-09-25 | キヤノン株式会社 | 機能性堆積膜の製造装置 |
| JPH07101751B2 (ja) * | 1985-03-28 | 1995-11-01 | キヤノン株式会社 | 光起電力素子の製造方法 |
| KR910003169B1 (ko) * | 1985-11-12 | 1991-05-20 | 가부시끼가이샤 한도다이 에네르기 겐뀨소 | 반도체 장치 제조 방법 및 장치 |
| JPH0647727B2 (ja) * | 1985-12-24 | 1994-06-22 | キヤノン株式会社 | 堆積膜形成法 |
| JPH084071B2 (ja) * | 1985-12-28 | 1996-01-17 | キヤノン株式会社 | 堆積膜形成法 |
-
1980
- 1980-10-11 JP JP55142246A patent/JPS5766625A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5766625A (en) | 1982-04-22 |
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