JPH0353393B2 - - Google Patents

Info

Publication number
JPH0353393B2
JPH0353393B2 JP5362583A JP5362583A JPH0353393B2 JP H0353393 B2 JPH0353393 B2 JP H0353393B2 JP 5362583 A JP5362583 A JP 5362583A JP 5362583 A JP5362583 A JP 5362583A JP H0353393 B2 JPH0353393 B2 JP H0353393B2
Authority
JP
Japan
Prior art keywords
etching
substrate
etching solution
workpiece
liquid tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5362583A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59179788A (ja
Inventor
Tsutomu Kyono
Hirokazu Shiraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5362583A priority Critical patent/JPS59179788A/ja
Publication of JPS59179788A publication Critical patent/JPS59179788A/ja
Publication of JPH0353393B2 publication Critical patent/JPH0353393B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
JP5362583A 1983-03-31 1983-03-31 ケミカルエッチング装置 Granted JPS59179788A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5362583A JPS59179788A (ja) 1983-03-31 1983-03-31 ケミカルエッチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5362583A JPS59179788A (ja) 1983-03-31 1983-03-31 ケミカルエッチング装置

Publications (2)

Publication Number Publication Date
JPS59179788A JPS59179788A (ja) 1984-10-12
JPH0353393B2 true JPH0353393B2 (de) 1991-08-14

Family

ID=12948085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5362583A Granted JPS59179788A (ja) 1983-03-31 1983-03-31 ケミカルエッチング装置

Country Status (1)

Country Link
JP (1) JPS59179788A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63162527U (de) * 1987-04-09 1988-10-24
JP3077140B2 (ja) * 1988-09-12 2000-08-14 日本電気株式会社 半導体装置の製造装置
CN103762160B (zh) * 2014-01-28 2017-05-10 北京华力创通科技股份有限公司 深硅刻蚀方法
CN111379009B (zh) * 2020-04-30 2022-04-29 中国电子科技集团公司第五十五研究所 一种薄膜铌酸锂光波导芯片抛光装置的抛光方法
KR102417059B1 (ko) * 2021-12-22 2022-07-06 램테크놀러지 주식회사 식각액 검증을 위한 배치형 식각 장치

Also Published As

Publication number Publication date
JPS59179788A (ja) 1984-10-12

Similar Documents

Publication Publication Date Title
CN108206145B (zh) 一种实现相邻晶圆对转的腐蚀装置及腐蚀方法
JPS60189936A (ja) 半導体製造装置
JPH0353393B2 (de)
US6365064B1 (en) Method for evenly immersing a wafer in a solution
JPH11162953A (ja) シリコンウェーハのエッチング方法
JPS6325498B2 (de)
JPS58123730A (ja) 半導体ウエハ−エツチング装置
JP2672822B2 (ja) 半導体基板用ウェーハのエッチング方法
JPS6386525A (ja) 半導体シリコンウエ−ハのエツチング装置
JP3153701B2 (ja) ウェット処理方法とウェット処理装置
CN216413009U (zh) 一种湿法蚀刻装置
KR950004973B1 (ko) 경사식 습식 식각조를 이용한 산화막 습식식각 방법
JPS62132325A (ja) ウエフアのエツチング方法およびそれに用いるウエフア・キヤリア
JP2886411B2 (ja) シリコンウエハのエッチング液およびその方法
JPH03142932A (ja) 半導体ウェハのエッチング方法およびエッチング装置
JPH06224171A (ja) ウエハ洗浄方法および装置
JPS61202411A (ja) 液相エピタキシヤル成長法
JPS58154234A (ja) 半導体基体の腐食方法
JPS5821335A (ja) 半導体ウエハのエツチング方法
JPH0227724A (ja) 化合物半導体のエッチング方法及び装置
JP3326777B2 (ja) 洗浄装置
JPH0677201A (ja) 基板洗浄方法
JPS63107030A (ja) ウエハ洗浄方法およびそれに用いるウエハ洗浄治具
JPH0435440B2 (de)
JPH02221187A (ja) 液相エピタキシャル成長方法