JPH0353393B2 - - Google Patents
Info
- Publication number
- JPH0353393B2 JPH0353393B2 JP5362583A JP5362583A JPH0353393B2 JP H0353393 B2 JPH0353393 B2 JP H0353393B2 JP 5362583 A JP5362583 A JP 5362583A JP 5362583 A JP5362583 A JP 5362583A JP H0353393 B2 JPH0353393 B2 JP H0353393B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- substrate
- etching solution
- workpiece
- liquid tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 39
- 238000003486 chemical etching Methods 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 10
- 238000005192 partition Methods 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 27
- 239000013078 crystal Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 10
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Description
【発明の詳細な説明】
(1) 発明の技術分野
本発明は、ケミカルエツチング装置に関し、さ
らに詳しく述べると、例えば化合物半導体結晶基
板のような被処理物の複数枚を同時に、しかもす
べての表面を均一に鏡面にエツチングすることが
可能な改良されたケミカルエツチング装置に関す
る。[Detailed Description of the Invention] (1) Technical Field of the Invention The present invention relates to a chemical etching apparatus, and more specifically, it is capable of etching a plurality of objects to be processed, such as compound semiconductor crystal substrates, simultaneously and etching all surfaces. This invention relates to an improved chemical etching device capable of uniformly etching a mirror surface.
(2) 従来技術と問題点
周知の通り、いろいろなケミカルエツチング方
法が提案され、実用されている。例えば、テフロ
ンビーカーにエツチング液を収容し、これを撹拌
しながらウエハを一枚ずつ処理する方法や、N2
ガスを用いてバブルエツチングを行なう方法、そ
してエツチング液の液面と直角をなす基板ホルダ
ーを用いて複数枚の基板をエツチングする方法等
が一般に行なわれている。ところが、上記した第
１の方法は、バツチ方式であるので、多量のウエ
ハを処理する場合にはあまりにも時間がかかりす
ぎる欠点がある。また、第２のバブルエツチング
法は、N2ガスをバブルしているために基板表面
に気泡が出来易く、表面が平滑になりにくいとい
う欠点がある。さらに、第３の方法は、結晶基板
を立ててエツチングを行なうのでエツチング液と
基板との反応により生成した気泡が上流方向に上
昇し、よつて、基板表面に縞模様が出来易いとい
う欠点がある。このような欠点に加えて、例えば
H2SO4系のような粘性の高いエツチング液を使
用すると、エツチング液の混合、撹拌がうまくい
かないので、液の流れにそつた縞模様が基板表面
上に出来上る。(2) Prior Art and Problems As is well known, various chemical etching methods have been proposed and put into practice. For example, there is a method in which an etching solution is stored in a Teflon beaker and the wafers are processed one by one while stirring the solution.
Commonly used methods include bubble etching using gas and etching a plurality of substrates using a substrate holder that is perpendicular to the surface of the etching solution. However, since the first method described above is a batch method, it has the disadvantage that it takes too much time when processing a large number of wafers. Further, the second bubble etching method has the disadvantage that bubbles are easily formed on the substrate surface because N 2 gas is bubbled, and the surface is difficult to smooth. Furthermore, the third method has the drawback that since etching is performed with the crystal substrate upright, air bubbles generated by the reaction between the etching solution and the substrate rise in the upstream direction, making it easy to form striped patterns on the substrate surface. . In addition to these drawbacks, e.g.
When a highly viscous etching solution such as H 2 SO 4 is used, mixing and stirring of the etching solution is difficult, resulting in a striped pattern on the substrate surface that follows the flow of the solution.
(3) 発明の目的
本発明は、上記したような被処理物表面の欠陥
を伴なわず、しかも多数枚の被処理物を一回の処
理でエツチングして被処理物表面を高均一な鏡面
に仕上げることのできるケミカルエツチング装置
を提供することを目的とする。このケミカルエツ
チング装置は、当然のことながら、構造簡単にし
て操作が容易でなければならない。(3) Purpose of the Invention The present invention does not involve defects on the surface of the workpiece as described above, and moreover, etches a large number of workpieces in a single process to give the surface of the workpiece a highly uniform mirror surface. The purpose of the present invention is to provide a chemical etching device that can finish the process. Naturally, this chemical etching apparatus must be simple in structure and easy to operate.
(4) 発明の構成
本発明者らは、このたび、エツチング液槽に該
エツチング液槽内壁から略水平に延び且つ複数の
孔を有する隔壁が、前記エツチング液槽内を下部
領域と上部領域とを分離する如く配設され、該下
部領域にはエツチング液を撹拌するマグネチツク
スターラーが設けられ、該上部領域には被処理物
が略水平に且つ複数枚保持できる保持具が設けら
れてなることを特徴とするケミカルエツチング装
置が上記目的の達成に有用であることを見い出し
た。(4) Structure of the Invention The present inventors have recently discovered that an etching liquid tank is provided with a partition wall that extends approximately horizontally from the inner wall of the etching liquid tank and has a plurality of holes, dividing the inside of the etching liquid tank into a lower region and an upper region. The lower region is provided with a magnetic stirrer for stirring the etching solution, and the upper region is provided with a holder capable of holding a plurality of objects to be processed substantially horizontally. It has been found that a chemical etching apparatus characterized by the following is useful for achieving the above object.
ここで、被処理物水平固定具は、それぞれが複
数本の被処理物ささえ棒を有し、そのうちの少な
くとも１本のささえ棒が可動であることが好まし
い。例えば、４点支承方式を採用し、４本のささ
え棒から水平固定具を構成し、そのうちの１本の
ささえ棒が左右に任意に移動可能とすることが推
奨される。このようにすると、被処理物のホルダ
ーへのセツトが容易であり、またそれを強固に固
定することができる。さらに、被処理物として化
合物半導体結晶基板を使用する場合、その基板結
晶の表面を上向きにしてホルダーにセツトするの
が望ましい。 Here, it is preferable that each of the horizontal fixtures for the workpiece has a plurality of workpiece support rods, and that at least one of the support rods is movable. For example, it is recommended that a four-point support system be adopted, a horizontal fixture made up of four support rods, and one of the support rods movable left and right. In this way, the object to be processed can be easily set in the holder, and it can be firmly fixed. Further, when a compound semiconductor crystal substrate is used as the object to be processed, it is desirable to set the substrate crystal in the holder with the surface of the substrate facing upward.
本発明の実施において、水平に延びた有孔隔壁
を有するエツチング液槽として例えば穴開き二重
底石英ビーカーなどを使用することができる。隔
壁の孔のサイズは、液槽のマグネツト回転領域で
エツチング液を撹拌した時にその液が隔壁の孔の
部分を通り抜けて上昇し、被処理物表面でなめら
かに流れるような乱流が生じるよう、任意に選択
することができる。一般には、この孔のサイズを
直径約８〜10mmとすることが好ましい。 In the practice of the present invention, a perforated double-bottomed quartz beaker, for example, can be used as an etching bath having a horizontally extending perforated partition. The size of the holes in the partition wall is such that when the etching liquid is stirred in the magnet rotation area of the liquid tank, the liquid passes through the hole in the partition wall and rises, creating a turbulent flow that flows smoothly on the surface of the workpiece. Can be selected arbitrarily. It is generally preferred that the pore size be about 8 to 10 mm in diameter.
本発明によるケミカルエツチング装置を、例え
ばAl，Ga，In等の周期表第族金属、例えばSi，
Sn，Pb等の周期表第族金属、そして例えば
As，Sb等の周期表第族金属の化合物半導体結
晶基板を例えばH2SO4−H2O2−H2O系エツチン
グ液の使用によりケミカルエツチングするのに有
利に利用することができる。それというのも、第
族〜第族化合物半導体結晶基板は表面が非常
に軟らかく、ミラーポリツシング等に原因する表
面ダメージ層や洗浄後の汚れ等が表面に残つてお
り、これらの表面欠陥を取り除くために約５〜
10μm程度のエツチングを要するからである。 The chemical etching apparatus according to the present invention can be used for etching metals of Group Group of the periodic table such as Al, Ga, In, etc., such as Si,
Group metals of the periodic table such as Sn, Pb, and e.g.
It can be advantageously used for chemically etching compound semiconductor crystal substrates made of group metals of the periodic table, such as As and Sb, by using, for example, an H 2 SO 4 --H 2 O 2 --H 2 O-based etching solution. This is because Group to Group compound semiconductor crystal substrates have very soft surfaces, and there are surface damage layers caused by mirror polishing, dirt, etc. left on the surface after cleaning, and these surface defects can be removed. About 5~ to remove
This is because etching of about 10 μm is required.
(5) 発明の実施例
次に、添付の図面を参照しながら本発明による
ケミカルエツチング装置を説明する。(5) Embodiments of the Invention Next, a chemical etching apparatus according to the present invention will be described with reference to the accompanying drawings.
第１図には、本発明によるケミカルエツチング
装置の好ましい一例が断面で示されている。図中
の１はマグネチツクスターラーであり、石英ビー
カー２内に収容したエツチング液３をマグネツト
４の回転を通じて入念に撹拌することができる。
その際、石英ビーカー２の隔壁５には多数個例え
ば40個程の孔が設けられており、それらの孔を通
る程よいエツチング液の乱流が形成でき、テフロ
ン製エツチングホルダー６から放射状に派生した
被処理物水平固定具７上の被処理物（基板）８の
表面をエツチング液がなめるようにいきわたる。 FIG. 1 shows a preferred example of a chemical etching apparatus according to the present invention in cross section. 1 in the figure is a magnetic stirrer, which can carefully stir the etching solution 3 contained in the quartz beaker 2 through the rotation of the magnet 4.
At this time, the partition wall 5 of the quartz beaker 2 is provided with a large number of holes, for example, about 40 holes, and a moderately turbulent flow of the etching solution can be formed through these holes. The etching solution spreads over the surface of the workpiece (substrate) 8 on the workpiece horizontal fixture 7 in a licking manner.
尚、石英ビーカー２の大きさは本実施例にあつ
ては、縦12〔cm〕、横12〔cm」、深さ10〔cm〕である。 In this embodiment, the quartz beaker 2 has dimensions of 12 cm in length, 12 cm in width, and 10 cm in depth.
図示の被処理物固定具７は、第２図に示される
ように、４本の被処理物ささえ棒９，９′，９″及
び９からなり、そのうちの１本であるささえ棒
９は矢印で示される如く左右に可動である。ささ
え棒９の左右動は、例えば、第３図に示されるよ
うに、ネジ止め１０の調節によつて達成すること
ができる。被処理物水平固定具７を上記のように
構成したので、結晶基板８をホルダー６にセツト
するのが容易であり、また、一度セツトした基板
８を強固に固定することができる。 The illustrated workpiece fixing device 7 consists of four workpiece support rods 9, 9', 9'' and 9, as shown in FIG. The horizontal movement of the support rod 9 can be achieved by adjusting the screws 10, for example, as shown in FIG. With the above structure, it is easy to set the crystal substrate 8 on the holder 6, and the substrate 8 can be firmly fixed once set.
次に、第１図のケミカルエツチング装置の操作
について説明する。先ず、石英ビーカー２にエツ
チング液の一定量３を入れ、マグネチツクスター
ラー１によつて十分に撹拌しておく。次いで、基
板ホルダー６のささえ棒９〜９で結晶基板８を
その表面が上向きとなるようにセツトし、エツチ
ング液の撹拌を一度中断してから基板ホルダー６
をエツチング液３中に浸漬し、再度エツチング液
の撹拌を開始する。石英ビーカー２の隔壁５の孔
の部分よりエツチング液に対流をおこさせ、結晶
基板表面になめらかにエツチング液をいきわたら
せる。 Next, the operation of the chemical etching apparatus shown in FIG. 1 will be explained. First, a certain amount of etching solution 3 is placed in a quartz beaker 2 and sufficiently stirred using a magnetic stirrer 1. Next, the crystal substrate 8 is set with the supporting rods 9 to 9 of the substrate holder 6 so that its surface faces upward, and stirring of the etching solution is once interrupted, and then the crystal substrate 8 is placed on the substrate holder 6.
is immersed in the etching solution 3, and stirring of the etching solution is started again. Convection is caused in the etching solution through the holes in the partition wall 5 of the quartz beaker 2, and the etching solution is spread smoothly over the surface of the crystal substrate.
なお、上記では結晶基板４枚を同時に処理する
ことの例を示したけれども、必要に応じて基板ホ
ルダー等の構成に若干の変更を加えて４枚以上の
枚数の結晶基板を同時にエツチングすることもも
ちろん可能である。 Although the above example shows how to process four crystal substrates at the same time, it is also possible to etching four or more crystal substrates at the same time by making slight changes to the structure of the substrate holder, etc., if necessary. Of course it is possible.
(6) 発明の効果
本発明によれば、複数板の結晶基板を簡単な操
作だけで１回のみでケミカルエツチングすること
ができ、また、均一性の高い鏡面様の表面を得る
ことができる。したがつて、エツチング結晶基板
の高歩留り、そして量産化が可能である。(6) Effects of the Invention According to the present invention, a plurality of crystal substrates can be chemically etched only once with simple operations, and a highly uniform mirror-like surface can be obtained. Therefore, high yield and mass production of etched crystal substrates is possible.
第１図は本発明によるケミカルエツチング装置
の好ましい一例を示した断面図、第２図はエツチ
ングホルダーに結晶基板をセツトした時の状態を
示した平面図、そして第３図は第２図の側面図で
ある。
図中、１はマグネチツクスターラー、２は石英
ビーカー、３はエツチング液、４はマグネツト、
５は有孔隔壁、６はエツチングホルダー、７は被
処理物水平固定具、８は被処理物、９はささえ
棒、そして１０はネジ止めである。
FIG. 1 is a sectional view showing a preferred example of the chemical etching apparatus according to the present invention, FIG. 2 is a plan view showing the state when a crystal substrate is set in an etching holder, and FIG. 3 is a side view of FIG. 2. It is a diagram. In the figure, 1 is a magnetic stirrer, 2 is a quartz beaker, 3 is an etching solution, 4 is a magnet,
Reference numeral 5 designates a perforated partition wall, 6 an etching holder, 7 a horizontal fixing device for a workpiece, 8 a workpiece, 9 a support rod, and 10 a screw.
Claims (1)
略水平に延び且つ複数の孔を有する隔壁が、前記
エツチング液槽内を下部領域と上部領域とを分離
する如く配設され、該下部領域にはエツチング液
を撹拌するマグネチツクスターラーが設けられ、
該上部領域には被処理物が略水平に且つ複数枚保
持できる保持具が設けられてなることを特徴とす
るケミカルエツチング装置。1. A partition wall extending substantially horizontally from the inner wall of the etching liquid tank and having a plurality of holes is disposed in the etching liquid tank so as to separate a lower region and an upper region in the etching liquid tank, and an etching wall is provided in the lower region. A magnetic stirrer is installed to stir the liquid.
A chemical etching apparatus characterized in that the upper region is provided with a holder capable of holding a plurality of objects to be processed substantially horizontally.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5362583A JPS59179788A (en) | 1983-03-31 | 1983-03-31 | Chemical etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5362583A JPS59179788A (en) | 1983-03-31 | 1983-03-31 | Chemical etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59179788A JPS59179788A (en) | 1984-10-12 |
| JPH0353393B2 true JPH0353393B2 (en) | 1991-08-14 |
Family
ID=12948085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5362583A Granted JPS59179788A (en) | 1983-03-31 | 1983-03-31 | Chemical etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59179788A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63162527U (en) * | 1987-04-09 | 1988-10-24 | ||
| JP3077140B2 (en) * | 1988-09-12 | 2000-08-14 | 日本電気株式会社 | Semiconductor device manufacturing equipment |
| CN103762160B (en) * | 2014-01-28 | 2017-05-10 | 北京华力创通科技股份有限公司 | Deep silicon etching method |
| CN111379009B (en) * | 2020-04-30 | 2022-04-29 | 中国电子科技集团公司第五十五研究所 | Polishing method of thin-film lithium niobate optical waveguide chip polishing device |
| KR102417059B1 (en) * | 2021-12-22 | 2022-07-06 | 램테크놀러지 주식회사 | Batch-type etching apparatus for verifying etchant |
-
1983
- 1983-03-31 JP JP5362583A patent/JPS59179788A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59179788A (en) | 1984-10-12 |
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