JP2561104B2 - Wet processing equipment for semiconductor substrates - Google Patents

Wet processing equipment for semiconductor substrates

Info

Publication number
JP2561104B2
JP2561104B2 JP62312083A JP31208387A JP2561104B2 JP 2561104 B2 JP2561104 B2 JP 2561104B2 JP 62312083 A JP62312083 A JP 62312083A JP 31208387 A JP31208387 A JP 31208387A JP 2561104 B2 JP2561104 B2 JP 2561104B2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
supporting member
hanger
contact portion
wet processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62312083A
Other languages
Japanese (ja)
Other versions
JPH01154530A (en
Inventor
正典 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62312083A priority Critical patent/JP2561104B2/en
Publication of JPH01154530A publication Critical patent/JPH01154530A/en
Application granted granted Critical
Publication of JP2561104B2 publication Critical patent/JP2561104B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】 〔概要〕 半導体基板の湿式処理装置の改良に関し、 半導体基板支持部材に載置された半導体基板が薬液中
に浸漬される際、ハンガーと支持手段との接触部に擦過
によって生じた粒子が、半導体基板の鏡面に付着しない
ように改良された半導体基板の湿式処理装置を提供する
ことを目的とし、 相互に並置され、半導体基板を支持する凹部を有する
少なくとも3本の棒状部材と、該棒状部材の端部を支持
固定する端部支持部材とよりなる半導体基板支持部材の
前記端部支持部材には、該半導体基板支持部材を懸架す
る支持手段が具備されている半導体基板の湿式処理装置
において、前記半導体基板支持部材を懸架する支持手段
は、少なくとも前記半導体基板の上端より上部に位置す
るように構成されている。
DETAILED DESCRIPTION OF THE INVENTION [Outline] The present invention relates to an improvement of a semiconductor substrate wet processing apparatus, wherein when a semiconductor substrate placed on a semiconductor substrate supporting member is immersed in a chemical solution, a contact portion between a hanger and a supporting means is abraded. For the purpose of providing a wet processing apparatus for a semiconductor substrate, the particles generated by the method are prevented from adhering to the mirror surface of the semiconductor substrate. A semiconductor substrate having a support means for suspending the semiconductor substrate support member, the end support member of the semiconductor substrate support member comprising a member and an end support member for supporting and fixing the end portion of the rod-shaped member. In the wet processing apparatus, the supporting means for suspending the semiconductor substrate supporting member is configured to be located at least above the upper end of the semiconductor substrate.

〔産業上の利用分野〕[Industrial applications]

本発明は、半導体基板の湿式処理装置の改良に関す
る。
The present invention relates to improvement of a wet processing apparatus for semiconductor substrates.

〔従来の技術〕[Conventional technology]

半導体基板の洗浄等の湿式処理をなす場合、半導体基
板支持部材3に複数枚の半導体基板Wを載置して、同時
に一括処理する方法が主として採用されている。半導体
基板支持部材3の材料としてはポリフェノールアクリレ
ートやテフロン等のような比較的柔らかい材料や、石
英、多結晶シリコン、炭化シリコン、サファイヤ等の硬
い材料が使用されている。
When performing wet processing such as cleaning of semiconductor substrates, a method of placing a plurality of semiconductor substrates W on the semiconductor substrate supporting member 3 and performing batch processing at the same time is mainly adopted. As a material for the semiconductor substrate supporting member 3, a relatively soft material such as polyphenol acrylate or Teflon, or a hard material such as quartz, polycrystalline silicon, silicon carbide or sapphire is used.

第4a図に示すように、半導体基板支持部材3を懸架す
る支持手段4は、半導体基板支持部材3に載置される半
導体基板Wの上端より下部に設けられる場合が多い。半
導体基板Wの取り付け取り外しが容易だからである。
As shown in FIG. 4a, the supporting means 4 for suspending the semiconductor substrate supporting member 3 is often provided below the upper end of the semiconductor substrate W placed on the semiconductor substrate supporting member 3. This is because it is easy to attach and detach the semiconductor substrate W.

半導体基板支持部材3に載置される半導体基板Wは、
載置および取り外しの簡略化し、さらには、自動化を可
能にするため、その鏡面側が、すべて同一方向に向くよ
うに載置されるのが、一般的である。その結果、半導体
基板支持部材3のいづれか一端に載置される半導体基板
の鏡面側は半導体基板支持部材3を懸架する支持手段4
に対接する。
The semiconductor substrate W placed on the semiconductor substrate supporting member 3 is
In order to simplify mounting and dismounting, and also to enable automation, it is common that the mirror surfaces are mounted in the same direction. As a result, the supporting means 4 suspends the semiconductor substrate supporting member 3 on the mirror surface side of the semiconductor substrate mounted on either one end of the semiconductor substrate supporting member 3.
To face.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

前記半導体基板支持部材3を、湿式処理のため薬液中
に浸漬する場合について、以下に説明する。
A case where the semiconductor substrate supporting member 3 is immersed in a chemical solution for wet processing will be described below.

第4a図に示すように、半導体基板支持部材3をハンガ
ーHをもって懸架し、第4b図に示すように、薬液中に降
下する。支持手段4とハンガーHとの接触部が薬液面に
達すると、支持手段4とハンガーHとの接触部が擦過し
て発生していた粒子が、図にPをもって示すように、薬
液面上に広がる。液面上に浮遊している上記粒子Pと、
液面下に没しようとしている半導体基板Wの表面とが直
接接触するため、液面上に浮遊している上記粒子Pが液
面下に没しようとしている半導体基板Wの表面に付着す
る。この欠点は鏡面側が支持手段4とハンガーHとの接
触部(ヒンジ部)に対接している端部の半導体基板の鏡
面側表面において特に顕著である。
As shown in FIG. 4a, the semiconductor substrate supporting member 3 is suspended by a hanger H and lowered into the chemical solution as shown in FIG. 4b. When the contact portion between the supporting means 4 and the hanger H reaches the chemical surface, the particles generated by rubbing the contact portion between the supporting means 4 and the hanger H are on the chemical surface as shown by P in the figure. spread. The particles P floating on the liquid surface,
Since the surface of the semiconductor substrate W that is about to be immersed below the liquid surface is in direct contact, the particles P floating above the liquid surface are attached to the surface of the semiconductor substrate W that is about to be immersed below the liquid surface. This defect is particularly remarkable on the mirror surface side surface of the semiconductor substrate at the end portion where the mirror surface side is in contact with the contact portion (hinge portion) between the supporting means 4 and the hanger H.

一般に、擦過によって生ずる粒子Pは粒径が数μm以
下と小さいため、ハンガーHと支持手段4との接触部が
液中に浸漬する以前に前記接触部に発生していた粒子P
は液面上に浮遊するが、液中に浸漬後に前記接触部に発
生する粒子Pは第4c図に示すように液中に漂い、この時
点では半導体基板Wの表面と粒子Pの間には薬液が存在
するため、これらの粒子Pが半導体基板Wの表面に付着
することは極めて少ない。
In general, the particle P generated by rubbing has a small particle size of several μm or less, and therefore the particle P generated at the contact portion before the contact portion between the hanger H and the supporting means 4 is immersed in the liquid.
Floats on the surface of the liquid, but the particles P generated at the contact portion after being immersed in the liquid float in the liquid as shown in FIG. 4c, and at this point of time, there is a gap between the surface of the semiconductor substrate W and the particles P. Due to the presence of the chemical liquid, these particles P rarely adhere to the surface of the semiconductor substrate W.

洗浄等の湿式処理が終り、ハンガーHを引き上げる場
合は、半導体基板Wと粒子Pの間に存在する薬液が、第
4d図に示すように、半導体基板表面上を流下するため、
粒子Pは半導体基板Wの表面にほとんど付着しない。
When the wet process such as cleaning is finished and the hanger H is pulled up, the chemical solution existing between the semiconductor substrate W and the particles P is
As shown in Figure 4d, because it flows down on the surface of the semiconductor substrate,
The particles P hardly adhere to the surface of the semiconductor substrate W.

上記せる有害な粒子Pは、主としてハンガーHと支持
手段4との接触部における擦過によって発生し、半導体
基板支持部材3と半導体基板Wとの接触部に発生する粒
子Pは極めて少ない。しかも、ハンガーHと支持手段4
との接触部に発生する粒子Pの半導体基板Wの表面への
付着は、ハンガーHと支持手段4との接触部が液中に浸
漬する瞬間に主として発生し、しかも、鏡面側がハンガ
ーHと支持手段4との接触部に対接する端部の半導体基
板の鏡面側に多く付着する。これは、二酸化シリコン表
面は親水性で粒子Pが付着し難いが、シリコン表面は撥
水性で粒子Pが付着し易いためである。
The harmful particles P described above are mainly generated by rubbing at the contact portion between the hanger H and the supporting means 4, and very few particles P are generated at the contact portion between the semiconductor substrate supporting member 3 and the semiconductor substrate W. Moreover, the hanger H and the supporting means 4
The adhesion of the particles P to the surface of the semiconductor substrate W generated in the contact portion with the contact occurs mainly at the moment when the contact portion between the hanger H and the supporting means 4 is immersed in the liquid, and the mirror surface side supports the hanger H and the supporting surface. A large amount is attached to the mirror surface side of the semiconductor substrate at the end portion facing the contact portion with the means 4. This is because the surface of silicon dioxide is hydrophilic and particles P are less likely to adhere to it, but the surface of silicon is water repellent and particles P are more likely to adhere to it.

これを防ぐために、半導体基板支持部材3に載置され
る半導体基板Wのうち、その鏡面側がハンガーHと支持
手段4との接触部に対接する端部の半導体基板1枚を、
その反鏡面側が前記接触部に対接するように半導体基板
支持部材3に載置する手法があるが、この手法による
と、半導体基板Wの半導体基板支持部材3への自動載置
化が困難となり、また、半導体基板Wを手動でそのよう
に(端部1枚のみを逆方向に載置すること)載置しよう
とすれば、半導体基板の鏡面に手が触れる危険性があ
り、この手法も好ましくない。
In order to prevent this, of the semiconductor substrates W mounted on the semiconductor substrate supporting member 3, one semiconductor substrate whose mirror surface side is in contact with the contact portion between the hanger H and the supporting means 4 is used.
There is a method of mounting the semiconductor substrate W on the semiconductor substrate supporting member 3 so that its non-mirror side is in contact with the contact portion. However, according to this method, it is difficult to automatically mount the semiconductor substrate W on the semiconductor substrate supporting member 3, Further, if the semiconductor substrate W is manually placed in such a manner (only one end is placed in the opposite direction), there is a risk that the mirror surface of the semiconductor substrate will be touched by the hand, and this method is also preferable. Absent.

本発明の目的は、この欠点を解消することにあり、半
導体基板支持部材3に載置された半導体基板Wが薬液中
に浸漬される際、ハンガーHと支持手段4との接触部に
擦過によって生じた粒子Pが、半導体基板Wの鏡面に付
着しないように改良された、半導体基板の湿式処理装置
を提供することにある。
An object of the present invention is to eliminate this drawback, and when the semiconductor substrate W mounted on the semiconductor substrate supporting member 3 is immersed in the chemical solution, the contact portion between the hanger H and the supporting means 4 is scraped by rubbing. It is an object of the present invention to provide a wet processing apparatus for a semiconductor substrate, which is improved so that the generated particles P do not adhere to the mirror surface of the semiconductor substrate W.

〔問題点を解決するための手段〕[Means for solving problems]

上記の目的は、相互に並置され、半導体基板を支持す
る凹部(11)を有する少なくとも3本の棒状部材(1)
と、該棒状部材(1)の端部(12)を支持固定する端部
支持部材(2)とよりなる半導体基板支持部材(3)の
前記端部支持部材(2)には、該半導体基板支持部材
(3)を懸架する支持手段(4)が具備されている半導
体基板の湿式処理装置において、前記半導体基板支持部
材(3)を懸架する支持手段(4)を、少なくとも前記
半導体基板の上端より上部に設けることによって達成さ
れる。
The above object is to provide at least three rod-shaped members (1) juxtaposed to each other and having recesses (11) for supporting a semiconductor substrate.
And an end supporting member (2) for supporting and fixing the end (12) of the rod-shaped member (1), the end supporting member (2) of the semiconductor substrate supporting member (3) includes the semiconductor substrate. In a semiconductor substrate wet processing apparatus provided with a supporting means (4) for suspending a supporting member (3), the supporting means (4) for suspending the semiconductor substrate supporting member (3) is at least the upper end of the semiconductor substrate. It is achieved by providing it on the upper side.

〔作用〕[Action]

ハンガーHと半導体基板支持部材3の接触部が半導体
基板支持部材3に載置されている半導体基板Wの上端よ
り上部に位置しているので、半導体基板支持部材3を薬
液中に浸漬する際、ハンガーHと半導体基板支持部材3
との接触部(詳しくは、半導体基板支持部材3を懸架す
る支持手段4とハンガーHとの接触部)が液中に浸漬さ
れる機会がなく、この半導体基板支持部材3を懸架する
支持手段4とハンガーHとの接触部に発生した粒子Pが
液面に浮遊することがない。仮に、ハンガーHと半導体
基板支持部材3との接触部(詳しくは、半導体基板支持
部材3を懸架する支持手段4とハンガーHとの接触部)
が液中に浸漬される機会があり、この半導体基板支持部
材3を懸架する支持手段4とハンガーHとの接触部に発
生した粒子Pが液面に浮遊することがあったとしても、
そのときには、ハンガーHと半導体基板支持部材3との
接触部が液面に到達する以前に、半導体基板Wは完全に
薬液中に浸漬されている。そのため、この粒子Pが液面
を液中に向かって通過中の半導体基板Wに付着すること
はない。
Since the contact portion between the hanger H and the semiconductor substrate supporting member 3 is located above the upper end of the semiconductor substrate W placed on the semiconductor substrate supporting member 3, when the semiconductor substrate supporting member 3 is immersed in the chemical solution, Hanger H and semiconductor substrate support member 3
There is no opportunity to immerse the contact portion (specifically, the contact portion between the supporting means 4 for suspending the semiconductor substrate supporting member 3 and the hanger H) in the liquid, and the supporting means 4 for suspending this semiconductor substrate supporting member 3 The particles P generated at the contact portion between the hanger H and the hanger H do not float on the liquid surface. Temporarily, the contact portion between the hanger H and the semiconductor substrate supporting member 3 (specifically, the contact portion between the hanger H and the supporting means 4 for suspending the semiconductor substrate supporting member 3).
There is an opportunity to be immersed in the liquid, and even if the particles P generated at the contact portion between the hanger H and the supporting means 4 for suspending the semiconductor substrate supporting member 3 may float on the liquid surface.
At that time, the semiconductor substrate W is completely immersed in the chemical liquid before the contact portion between the hanger H and the semiconductor substrate supporting member 3 reaches the liquid surface. Therefore, the particles P do not adhere to the semiconductor substrate W passing through the liquid surface into the liquid.

〔実施例〕〔Example〕

以下、図面を参照しつゝ、本発明の一実施例に係る半
導体基板の湿式処理装置について説明する。
Hereinafter, a wet processing apparatus for a semiconductor substrate according to an embodiment of the present invention will be described with reference to the drawings.

第1図、第2図、第3図参照 1は相互に並置された少なくとも3本からなる棒状部
材であり、半導体基板Wを支持する凹部11を有する。
See FIG. 1, FIG. 2, and FIG. 3. Reference numeral 1 is a rod-shaped member composed of at least three juxtaposed with each other, and has a recess 11 for supporting the semiconductor substrate W.

3は半導体基板支持部材であり、前記棒状部材1と前
記棒状部材1の端部12を支持固定する端部支持部材2と
よりなる。
A semiconductor substrate support member 3 is composed of the rod-shaped member 1 and an end portion support member 2 that supports and fixes the end portion 12 of the rod-shaped member 1.

4は前記端部支持部材2に設けられ、前記半導体基板
支持部材3を懸架する支持手段であり、少なくとも前記
半導体基板Wの上端より上部に位置するように設けられ
ている。
Reference numeral 4 denotes a support means provided on the end support member 2 for suspending the semiconductor substrate support member 3, and is provided at least above the upper end of the semiconductor substrate W.

第2図は、ハンガーHと支持手段4との接触部が半導
体基板Wの上端より上部に位置するが、湿式処理の際、
前記接触部も薬液中に浸漬する例を示す。また第3図
は、湿式処理の際、前記接触部は薬液中に浸漬しない半
導体基板の湿式処理装置を示す。
In FIG. 2, the contact portion between the hanger H and the supporting means 4 is located above the upper end of the semiconductor substrate W.
An example in which the contact portion is also immersed in the chemical solution is shown. Further, FIG. 3 shows a wet processing apparatus for a semiconductor substrate in which the contact portion is not immersed in a chemical solution during wet processing.

第3図に示す半導体基板の湿式処理装置においては、
ハンガーHと支持手段4との接触部において発生した粒
子Pが薬液中に拡散しないという点で、第2図に示す半
導体基板の湿式処理装置よりも半導体基板Wが表面の清
浄度を保つ点では効果が大きいが、引き続き例えば熱処
理を行う場合には、装置の高さが高いため、炉芯管に搬
入する際支障の原因となる等の欠点はある。したがっ
て、上記の長所、短所を考慮の上、両構造を使い分ける
ことが好ましい。
In the semiconductor substrate wet processing apparatus shown in FIG.
Since the particles P generated at the contact portion between the hanger H and the supporting means 4 do not diffuse into the chemical solution, the semiconductor substrate W has a higher surface cleanness than the semiconductor substrate wet processing apparatus shown in FIG. Although the effect is great, there is a drawback that, for example, when heat treatment is performed subsequently, the height of the apparatus is high, which causes troubles when carrying it into the furnace core tube. Therefore, it is preferable to properly use both structures in consideration of the above advantages and disadvantages.

〔発明の効果〕〔The invention's effect〕

相互に並置され、半導体基板を支持する凹部を有する
少なくとも3本の棒状部材と、この棒状部材の端部を支
持固定する端部支持部材とからなる半導体基板支持部材
を構成する端部支持部材には、半導体基板支持部材を懸
架する支持手段が設けられている半導体基板の湿式処理
装置において、ハンガーと半導体基板支持部材との接触
部が、半導体基板の上端よりも上部に位置しているの
で、半導体基板支持部材を懸架する支持手段とハンガー
との接触部が液中に浸漬される機会がなく、この半導体
基板支持部材を懸架する支持手段(突起)とハンガーと
の接触部に発生した粒子が液面に浮遊することがない。
仮に、半導体基板支持部材を懸架する支持手段とハンガ
ーとの接触部が液中に浸漬される機会があり、この半導
体基板支持部材に発生した粒子が液面に浮遊することが
あったとしても、そのときには、半導体基板支持部材を
薬液中に浸漬する際、ハンガーと半導体基板支持部材と
の接触部が液面に到達する以前に、半導体基板は完全に
薬液中に浸漬されているので、ハンガーと半導体基板支
持部材との接触部に発生した粒子が液面に浮遊し、それ
が、液面を液中に向かって通過中の半導体基板に付着す
ることはない。
An end supporting member that constitutes a semiconductor substrate supporting member including at least three rod-shaped members that are juxtaposed to each other and have a recess for supporting a semiconductor substrate, and an end supporting member that supports and fixes an end of the rod-shaped member. In a wet processing apparatus for a semiconductor substrate provided with a supporting means for suspending the semiconductor substrate supporting member, since the contact portion between the hanger and the semiconductor substrate supporting member is located above the upper end of the semiconductor substrate, There is no opportunity to immerse the contact portion between the supporting means for suspending the semiconductor substrate supporting member and the hanger in the liquid, and the particles generated at the contact portion between the supporting means (protrusion) for suspending the semiconductor substrate supporting member and the hanger are Does not float on the liquid surface.
If there is an opportunity to immerse the contact portion between the hanger and the supporting means for suspending the semiconductor substrate supporting member in the liquid, even if the particles generated in the semiconductor substrate supporting member may float on the liquid surface, At that time, when the semiconductor substrate supporting member is immersed in the chemical liquid, the semiconductor substrate is completely immersed in the chemical liquid before the contact portion between the hanger and the semiconductor substrate supporting member reaches the liquid surface. The particles generated at the contact portion with the semiconductor substrate supporting member do not float on the liquid surface and do not adhere to the semiconductor substrate passing through the liquid surface into the liquid.

実際に半導体基板の鏡面側に付着する発塵粒子の数を
測定した結果、従来技術に係る半導体基板の湿式処理装
置と比較して、本発明に係る半導体基板の湿式処理装置
においては、付着する粒子の数を数10分の1に減少する
ことができ、本発明の効果が確認された。第5、6図
は、本発明の効果を示す写真である。
As a result of actually measuring the number of dust particles attached to the mirror surface side of the semiconductor substrate, as compared with the conventional wet processing apparatus for a semiconductor substrate, the wet processing apparatus for a semiconductor substrate according to the present invention attaches the particles. The number of particles can be reduced to several tenths, and the effect of the present invention was confirmed. 5 and 6 are photographs showing the effect of the present invention.

【図面の簡単な説明】[Brief description of drawings]

第1図は、本発明に係る半導体基板の湿式処理装置の構
造図である。 第2、3図は、本発明の実施例に係る半導体基板の湿式
処理装置の構造図である。 第4a、4b、4c、4d図は、従来技術に係る半導体基板の湿
式処理装置の処理工程を示す説明図である。 1……棒状部材、 11……棒状部材の凹部、 12……棒状部材の端部、 2……端部支持部材、 3……半導体基板支持部材、 4……支持手段、 W……半導体基板、 H……ハンガー、 P……支持手段とハンガーとの擦過によって生じた粒
子。
FIG. 1 is a structural diagram of a wet processing apparatus for semiconductor substrates according to the present invention. 2 and 3 are structural diagrams of a semiconductor substrate wet processing apparatus according to an embodiment of the present invention. FIGS. 4a, 4b, 4c, and 4d are explanatory views showing processing steps of a conventional semiconductor substrate wet processing apparatus. DESCRIPTION OF SYMBOLS 1 ... Rod-shaped member, 11 ... Recess of rod-shaped member, 12 ... End of rod-shaped member, 2 ... End support member, 3 ... Semiconductor substrate support member, 4 ... Support means, W ... Semiconductor substrate , H ... Hanger, P ... Particles generated by rubbing between the support means and the hanger.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】相互に並置され、半導体基板を支持する凹
部(11)を有する少なくとも3本の棒状部材(1)と、
該棒状部材(1)の端部(12)を支持固定する端部支持
部材(2)とよりなる半導体基板支持部材(3)の前記
端部支持部材(2)には、該半導体基板支持部材(3)
を懸架する支持手段(4)が具備されている半導体基板
の湿式処理装置において、 前記半導体基板支持部材(3)を懸架する支持手段
(4)は、少なくとも前記半導体基板の上端より上部に
位置する ことを特徴とする半導体基板の湿式処理装置。
1. At least three rod-shaped members (1) juxtaposed with each other and having recesses (11) for supporting a semiconductor substrate,
The semiconductor substrate supporting member is provided on the end supporting member (2) of the semiconductor substrate supporting member (3) including the end supporting member (2) for supporting and fixing the end (12) of the rod-shaped member (1). (3)
In a wet processing apparatus for a semiconductor substrate, which is provided with a supporting means (4) for suspending the semiconductor substrate, the supporting means (4) for suspending the semiconductor substrate supporting member (3) is located at least above the upper end of the semiconductor substrate. A wet processing apparatus for a semiconductor substrate, comprising:
JP62312083A 1987-12-11 1987-12-11 Wet processing equipment for semiconductor substrates Expired - Fee Related JP2561104B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62312083A JP2561104B2 (en) 1987-12-11 1987-12-11 Wet processing equipment for semiconductor substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62312083A JP2561104B2 (en) 1987-12-11 1987-12-11 Wet processing equipment for semiconductor substrates

Publications (2)

Publication Number Publication Date
JPH01154530A JPH01154530A (en) 1989-06-16
JP2561104B2 true JP2561104B2 (en) 1996-12-04

Family

ID=18025032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62312083A Expired - Fee Related JP2561104B2 (en) 1987-12-11 1987-12-11 Wet processing equipment for semiconductor substrates

Country Status (1)

Country Link
JP (1) JP2561104B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2609815B2 (en) * 1994-07-22 1997-05-14 九州日本電気株式会社 Wet processing equipment

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL187942C (en) * 1980-08-18 1992-02-17 Philips Nv ZENERDIODE AND METHOD OF MANUFACTURE THEREOF
JPS60183438U (en) * 1984-05-17 1985-12-05 株式会社東芝 Semiconductor substrate storage cassette
JPS62120289A (en) * 1985-11-19 1987-06-01 株式会社 丹下鉄工所 Method of joining fork shoulder and stem of bicycle
JPS62175316A (en) * 1986-01-28 1987-08-01 Nec Yamagata Ltd Semi-conductor aligning device
JPH0179838U (en) * 1987-11-17 1989-05-29

Also Published As

Publication number Publication date
JPH01154530A (en) 1989-06-16

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