JPS6083334A - Washer - Google Patents

Washer

Info

Publication number
JPS6083334A
JPS6083334A JP19162483A JP19162483A JPS6083334A JP S6083334 A JPS6083334 A JP S6083334A JP 19162483 A JP19162483 A JP 19162483A JP 19162483 A JP19162483 A JP 19162483A JP S6083334 A JPS6083334 A JP S6083334A
Authority
JP
Japan
Prior art keywords
washing tank
water
substrate
washing
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19162483A
Other languages
Japanese (ja)
Inventor
Setsuo Nagashima
長島 節夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP19162483A priority Critical patent/JPS6083334A/en
Publication of JPS6083334A publication Critical patent/JPS6083334A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To remove abrasives efficiently from the surface of a substrate by washing the substrate while giving a vibration to wash water spirally flowing back by an ultrasonic vibtator fitted to the side surface of a washing tank and removing particles having large specific gravity from a drainage pipe while making fine particles overflow from the washing tank. CONSTITUTION:With a substrate washing tank, a water pipe 2 is fitted to the side surface of a cylindrical washing tank 1 while the bottom of the washing tank 1 takes a funnel shape, a drainage pipe 3 is formed at the center, and an ultrasonic vibrator 4 is fitted to the side surface of the cylindrical washing tank 1, and it is installed to a rest 5 and used. When substrates 6 are entered, water is poured from the water pipe 2 and the substrates are washed while operating the ultrasonic vibrator 4, fine particles in abrasive particles stripped off from the substrates 6 overflow from the upper section of the washing tank 1, and comparatively large particles having specific gravity larger than water are discharged from the drainage pipe 3, thus resulting in complete washing.

Description

【発明の詳細な説明】 (al 発明の、技術分野 ” 本発明は新暦、した基板を洗滌する洗酢槽の構成に関す
る。′ □ (b) 技術の背景 ゛ 半導体IC,LSIなどのデバイス(・1シリコン(S
t )、ガリウム砒fi: (Ga As )などの−
t¥結結晶基板出用薄膜形成技術と写真蝕刻技術(ホト
リングラフィ)によって導体パターンなどの微イ1:1
パターンが作られでいる。
[Detailed Description of the Invention] (Al Technical Field of the Invention) The present invention relates to the configuration of a cleaning vinegar tank for cleaning substrates that have been cleaned by the new calendar.' □ (b) Background of the Technology ゛Devices such as semiconductor ICs and LSIs (・1 silicon (S
t), gallium arsenide: (GaAs), etc.
t¥ 1:1 fine patterning of conductor patterns, etc. using thin film formation technology for crystalline substrates and photolithography
A pattern is being created.

こ\で写真蝕刻技術はホトレジストを塗布した半導体基
板に予め微細パターンが形成しであるホトマスクを用い
て紫外fl、il’、+−などを投影露光し、ホトレジ
ストとしてネガタイプを用いるjZ”1合は光照射部が
不溶となり、一方ボシタイブを用いる場合は光照射部が
可溶となる性質を利用し7て選択エツチングが行われて
いる。
In this photo-etching technique, a fine pattern is formed in advance on a semiconductor substrate coated with photoresist, and a photomask is used to project and expose ultraviolet light, il', +-, etc. In the case of using a negative type photoresist, Selective etching is carried out by taking advantage of the property that the light irradiated part becomes insoluble, whereas when using a bossitive, the light irradiated part becomes soluble.

この処理で使用されるホトマスクはガラス或(寸透明石
芙かもなる基板上にクローム(Cr)金梢を蒸着しこれ
に原画を露光しパターン形成I7て得た原板であって半
fil;体デバイスの量産工程において半導体基板(ウ
ェハ)に投影露光を行う除の原板として1ハ五用丁され
るものである。
The photomask used in this process is an original plate obtained by depositing chromium (Cr) gold on a substrate made of glass (or even transparent stone) and exposing an original image thereto to form a pattern. It is used as an original plate for projection exposure on semiconductor substrates (wafers) in the mass production process.

さてホトマスクは高いパターン81g二が性質であり、
壕だ傷や汚染があってはならぬことから比較的短い使用
頻度で新品と交換されている。
Now, the photomask has a high pattern of 81g2,
Because there should be no scratches or contamination, they are replaced with new ones after relatively short use.

こ\でホトマスク用の基板としては石英或はガラスが用
いられているがホトマスク生成過程で不良となったもの
或り使用後不良となったものはマスクパターンをエツチ
ングして除去し、基板として可使用することが可能であ
る。本発明は基板の再生工程で使用する洗滌槽の構成に
関するものである。
Quartz or glass is used as a substrate for photomasks, but if the photomask becomes defective during the photomask production process or becomes defective after use, the mask pattern is removed by etching, and it can be used as a substrate. It is possible to use. The present invention relates to the structure of a cleaning tank used in a substrate recycling process.

fcl 従来技術と問題点 ホトマスクの製造過程で不良として除去された基板或は
使用後不良となった基板は深い引掻き傷或は基板割れ等
の致命的な欠陥が無い限り再生が可能である。特に石英
基板はガラス基板と較べて高価であると共に機械的特性
も優れているので使用済みの基板は再生使用されている
fcl Prior Art and Problems Substrates removed as defective during the photomask manufacturing process or substrates that become defective after use can be recycled as long as there are no fatal defects such as deep scratches or substrate cracks. In particular, quartz substrates are more expensive than glass substrates and have superior mechanical properties, so used substrates are often recycled.

すなわちホトマスク形成の際に使用したエツチング液例
えば硝酸第2セリウムアン七ンと過塩素酸からなる液に
浸漬して約1000(A)の厚さに形成されているCr
層を除去し次に研Mt!kを用いて両面を研磨(ラッピ
ング)し表面FIJを数〔μm〕除くことにより平滑面
が得られている。然し乍らこのラッピング工程で使用す
る研摩剤例えば酸化セリウム(CeO,)などは極めて
微少粒径のものが用いられまた不溶性であることからう
、ピング終了後これらの研摩剤を完全に除去することは
容易ではない。然し収率よ〈ホトマスクを形成するには
これらの研摩剤を完全に除くことが必要である。
That is, Cr is formed to a thickness of about 1000 (A) by immersing it in an etching solution used in forming a photomask, such as a solution consisting of ceric nitrate and perchloric acid.
Remove the layer and then polish Mt! A smooth surface was obtained by polishing (lapping) both surfaces using k and removing several μm of surface FIJ. However, since the abrasives used in this lapping process, such as cerium oxide (CeO), have extremely small particle sizes and are insoluble, it is easy to completely remove these abrasives after lapping is completed. isn't it. However, in order to form a photomask, it is necessary to completely remove these abrasives.

その理由はホトマスクを形成するCr層の厚さが約10
00(A)と極めて薄いこと以外に研摩粉などが微少な
りとも存在するとCr層と基板との接着力が減少する結
果としてパターンが部分的に欧ける現象を生じ不良とな
る。そのため従来は超音波洗滌器を備えた洗滌槽の中に
長時間浸漬すると共に、か\る洗滌槽を連続して設置ぺ
し順次移行させることにより行っていた。然しCε02
の比較的粒度の大きなものは洗滌槽の底部に沈積すると
共に液中全浮遊しており、多量の基板を連続して洗滌す
る場合には新暦粉の完全除去は容易ではなかった。
The reason for this is that the thickness of the Cr layer forming the photomask is approximately 10
In addition to being extremely thin (00 (A)), the presence of even a small amount of polishing powder will reduce the adhesive force between the Cr layer and the substrate, resulting in a phenomenon in which the pattern partially fades, resulting in a defect. Conventionally, this has been done by immersing the item in a cleaning tank equipped with an ultrasonic cleaner for a long time, and by sequentially installing such a cleaning tank and moving the item one by one. However, Cε02
The relatively large particles of Shinreki powder were deposited at the bottom of the cleaning tank and were completely suspended in the solution, making it difficult to completely remove Shinreki powder when washing a large amount of substrates continuously.

(cl) 発明の目的 本発明は短時間の洗滌で効率よく基板の表面から研磨剤
を除去できる洗滌槽の構成を提供することを目的とする
(cl) Object of the Invention The object of the present invention is to provide a cleaning tank configuration that can efficiently remove abrasive from the surface of a substrate in a short time.

te+ 発明の構成 本発明の目的は洗滌槽が洗滌水を供給する給水管とこの
給水管が接続してあり、基板洗滌を行う円筒状の洗滌槽
とこの洗滌槽に接続する漏斗状の排水管から構成され、
洗滌槽の側面に備えた超音波振動子により渦巻状に環流
する洗滌水に振動を与え乍ら基板洗滌を行い比重の大き
な粒子は排水管より除去し、一方微粒子は洗滌槽からオ
ーバフローさせて洗滌する構造をとることにより達成す
ることができる。
te+ Structure of the Invention The purpose of the present invention is to provide a cylindrical cleaning tank in which a cleaning tank is connected to a water supply pipe that supplies cleaning water, and a cylindrical cleaning tank for cleaning substrates, and a funnel-shaped drain pipe that is connected to the cleaning tank. It consists of
An ultrasonic vibrator installed on the side of the cleaning tank vibrates the swirling cleaning water while cleaning the substrate. Particles with large specific gravity are removed from the drain pipe, while fine particles are washed by overflowing from the cleaning tank. This can be achieved by adopting a structure that

ffl 発明の実施例 第1図は本発明に係る基板洗滌槽の斜視図、第2図はこ
の中に設置する基板保持台(基板ホルダ)の斜視図、第
3図(ト)は基板洗滌槽の正面図また同図(B)は平面
図である。
ffl Embodiment of the Invention Fig. 1 is a perspective view of a substrate cleaning tank according to the present invention, Fig. 2 is a perspective view of a substrate holding stand (substrate holder) installed therein, and Fig. 3 (G) is a perspective view of the substrate cleaning tank. The front view and the same figure (B) are a plan view.

本発明に係る基板洗滌槽は円筒状の洗滌槽1の側面に給
水管2を備えると共に洗滌槽1の底部が円筒状の洗滌槽
1の側面に超音波振動子4を設けた構造をとり、架台5
に設置して使用される。こ\で給水管2は第3図(B)
に示すように洗滌槽1の接線方向に設けてあり、給水管
2を通りて注入された洗滌水は槽内を渦巻き状に環流し
て排水管3より排出される。
The substrate cleaning tank according to the present invention has a structure in which a water supply pipe 2 is provided on the side surface of a cylindrical cleaning tank 1, and an ultrasonic vibrator 4 is provided on the side surface of the cylindrical cleaning tank 1 at the bottom of the cleaning tank 1. Frame 5
It is installed and used. The water supply pipe 2 is shown in Figure 3 (B).
As shown in the figure, the cleaning water is provided in the tangential direction of the cleaning tank 1, and the cleaning water injected through the water supply pipe 2 circulates in the tank in a spiral shape and is discharged from the drain pipe 3.

また超音波振動子4は環流する洗滌水に超音波振動を与
えて基板表面に固着している微細な研磨剤をウェハより
剥離させるもので洗滌槽1の側面に固定して設けること
が洗滌水の環流を妨げぬ点から望ましいが洗滌槽に吊し
て使用してもよい。
Further, the ultrasonic vibrator 4 applies ultrasonic vibration to the circulating cleaning water to peel off fine abrasives stuck to the substrate surface from the wafer. Although it is desirable from the viewpoint of not interfering with the reflux of water, it may also be used by hanging it in a washing tank.

なお基板6は第2図に示すような基板ホルダ5を用いて
複数個を一定間隔を置いて配列する。
Note that a plurality of substrates 6 are arranged at regular intervals using a substrate holder 5 as shown in FIG.

こ\でホトマスクに使用する基板6は角形以外に直径が
6〔インチ〕或は7〔インチ〕のディスク状のものもあ
り、それぞれ適合する基板ホルダ5に配列して洗滌槽1
の中に設置する。
In this case, the substrates 6 used for the photomask are not only rectangular but also disc-shaped with a diameter of 6 or 7 inches, and they are arranged in suitable substrate holders 5 and placed in the cleaning tank 1.
Install it inside.

このように基板6を入れた後給水管2より注水し超音波
振動子4′fr、動作させ乍ら洗滌すると基板6より剥
ぎ取られた研磨剤粒子の内機粒子は洗滌し Ql!llの上よりオーバーフロー柔、また比較的大き
く水よりも比重の大きな粒子は排水管3より排出され完
全な洗滌を行うことができる。
After inserting the substrate 6 in this way, water is poured from the water supply pipe 2 and the ultrasonic vibrator 4'fr is operated while cleaning, and the internal particles of the abrasive particles peeled off from the substrate 6 are washed away.Ql! Overflow particles from above 11 and relatively large particles having a specific gravity greater than that of water are discharged from the drain pipe 3, allowing complete washing.

なお本発明に係る洗滌槽において排水管3の径は給水管
2の径に較べて小さく構成されており、動作中排水管3
よ抄の排水と共にオーバーフローによる排水が行われる
ことが必要条件でちる。
In addition, in the washing tank according to the present invention, the diameter of the drain pipe 3 is configured to be smaller than the diameter of the water supply pipe 2.
It is a necessary condition that drainage is carried out by overflow together with drainage from Yosho.

(g) 発明の効果 本発明は従来の洗滌槽は排水管を備えておらずまた備え
ていてもその位置が悪いため比重の大きな微粒子が洗滌
槽の底部に沈積すると共に一部は超音波撮動てより液中
全運動しており、基板引上げの際基板面に付着する可能
性が強かったが、本発明に係る洗滌槽の使用により、洗
滌槽を何回も換えて洗滌する必要がなくなり洗滌効率を
上げることができlこ。
(g) Effects of the Invention The present invention shows that the conventional cleaning tank is not equipped with a drain pipe, and even if it is provided, the drain pipe is located in a bad position, so fine particles with a large specific gravity settle at the bottom of the cleaning tank, and some of them cannot be detected by ultrasonic imaging. However, by using the cleaning tank of the present invention, there is no need to change the cleaning tank many times for cleaning. This can increase cleaning efficiency.

【図面の簡単な説明】[Brief explanation of the drawing]

へ(1図は本発明に係る基板洗滌槽の斜視図、第2図は
基板保持台の斜視図また第3図囚は基板洗滌槽の正面図
で(B)は平面図である。 図において1は基板洗滌槽、2は給水管、3は排水管、
4は超音波振動子、5は架台、6は基板。
Figure 1 is a perspective view of a substrate cleaning tank according to the present invention, Figure 2 is a perspective view of a substrate holding stand, Figure 3 is a front view of the substrate cleaning tank, and (B) is a plan view. 1 is a substrate cleaning tank, 2 is a water supply pipe, 3 is a drain pipe,
4 is an ultrasonic transducer, 5 is a pedestal, and 6 is a substrate.

Claims (2)

【特許請求の範囲】[Claims] (1)基板を洗滌する装装置が洗滌水を供給する給水管
と、該給水管が接続された円筒状の洗滌Il′I々と、
該洗滌槽に接続された漏斗状の排水管とを具備し、該給
水管が該洗滌槽に対し接線方向に峻けられており、該給
水管よりの供給水が洗滌槽内を渦巻状に環流しで排水管
より・排水されることを特徴とする洗滌装置。
(1) A water supply pipe that supplies cleaning water to a device for cleaning the substrate, and a cylindrical cleaning pipe Il′I to which the water supply pipe is connected;
A funnel-shaped drain pipe is connected to the washing tank, and the water supply pipe is tapered tangentially to the washing tank, and the water supplied from the water supply pipe flows inside the washing tank in a spiral shape. A washing device characterized in that water is discharged from a drain pipe by circulating water.
(2)洗滌槽の外周部側面に超音波振動子を設け、環流
を妨げることなく洗滌水に超音波振動を与えて洗滌する
ことを特徴とする特許請求の範囲第1項記載の洗滌装置
。 :・・
(2) The washing device according to claim 1, characterized in that an ultrasonic vibrator is provided on the side surface of the outer circumference of the washing tank, and washing is performed by applying ultrasonic vibrations to the washing water without interfering with circulation. :...
JP19162483A 1983-10-13 1983-10-13 Washer Pending JPS6083334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19162483A JPS6083334A (en) 1983-10-13 1983-10-13 Washer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19162483A JPS6083334A (en) 1983-10-13 1983-10-13 Washer

Publications (1)

Publication Number Publication Date
JPS6083334A true JPS6083334A (en) 1985-05-11

Family

ID=16277734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19162483A Pending JPS6083334A (en) 1983-10-13 1983-10-13 Washer

Country Status (1)

Country Link
JP (1) JPS6083334A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62149161A (en) * 1985-12-23 1987-07-03 Mitsui Toatsu Chem Inc Removing method for abrasive material

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4941800U (en) * 1972-07-13 1974-04-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4941800U (en) * 1972-07-13 1974-04-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62149161A (en) * 1985-12-23 1987-07-03 Mitsui Toatsu Chem Inc Removing method for abrasive material

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