JP3077140B2 - Semiconductor device manufacturing equipment - Google Patents

Semiconductor device manufacturing equipment

Info

Publication number
JP3077140B2
JP3077140B2 JP63228022A JP22802288A JP3077140B2 JP 3077140 B2 JP3077140 B2 JP 3077140B2 JP 63228022 A JP63228022 A JP 63228022A JP 22802288 A JP22802288 A JP 22802288A JP 3077140 B2 JP3077140 B2 JP 3077140B2
Authority
JP
Japan
Prior art keywords
storage tank
liquid
filtering
etching
etching solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63228022A
Other languages
Japanese (ja)
Other versions
JPH0276229A (en
Inventor
真 甲斐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63228022A priority Critical patent/JP3077140B2/en
Publication of JPH0276229A publication Critical patent/JPH0276229A/en
Application granted granted Critical
Publication of JP3077140B2 publication Critical patent/JP3077140B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Weting (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造装置、特にウェットエッチ
ング装置の貯液槽内のエッチング液の清浄化を行う装置
に関する。
The present invention relates to an apparatus for manufacturing a semiconductor device, and more particularly to an apparatus for cleaning an etching solution in a liquid storage tank of a wet etching apparatus.

〔従来の技術〕 従来、この種のウェットエッチング装置は第3図に示
すように、エッチング液2を貯留する貯液槽1の底部一
箇所から配管系を導出し、該配管系に電磁弁4a、ポンプ
5、フィルタ6、電磁弁4fを設け、該配管系を貯液槽1
に帰還させる構造になっていた。また8は液補充ライ
ン、4dはライン8に設けた電磁弁、7は処理槽給液ライ
ン、4eはライン7に設けた電磁弁である。
[Prior Art] Conventionally, as shown in FIG. 3, this type of wet etching apparatus draws out a piping system from a bottom portion of a liquid storage tank 1 for storing an etching solution 2 and supplies an electromagnetic valve 4a to the piping system. , A pump 5, a filter 6, and a solenoid valve 4f.
It had a structure to return to. Reference numeral 8 denotes a liquid replenishment line, 4d denotes an electromagnetic valve provided in the line 8, 7 denotes a processing tank liquid supply line, and 4e denotes an electromagnetic valve provided in the line 7.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

上述した従来のウェットエッチング装置は貯液槽1の
一箇所のみでエッチング液を抜き取りフィルタリングし
ているが、採取している部分から離れた槽内のエッチン
グ液はほとんどフィルタリングされないため、貯液槽内
の全てのエッチング液を完全にフィルタリングして清浄
化することができないという欠点がある。またエッチン
グ液は1回のフィルタリングだけでは完全に微粒子の除
去ができないため、何回もフィルタリングすることによ
りエッチング液の清浄化を行う必要があり、貯液槽内の
エッチング液の清浄化は半日以上フィルタリングの実施
が必要となる欠点がある。
In the above-described conventional wet etching apparatus, the etching solution is extracted and filtered only at one location of the liquid storage tank 1, but the etching liquid in the tank apart from the sampling portion is hardly filtered. Has the drawback that it is not possible to completely filter and clean all the etchants. In addition, since the fine particles cannot be completely removed by only one filtering of the etching solution, it is necessary to clean the etching solution by filtering a number of times, and the cleaning of the etching solution in the storage tank takes more than half a day. There is a disadvantage that filtering must be performed.

本発明の目的は前記課題を解決した半導体装置の製造
装置を提供することにある。
An object of the present invention is to provide a semiconductor device manufacturing apparatus which solves the above-mentioned problems.

〔発明の従来技術に対する相違点〕[Differences of the Invention from the Prior Art]

上述した従来のウェットエッチング装置に対し、本発
明は貯液槽内のエッチング液を撹拌させることにより、
局部的に汚れたエッチング液がたまることを防止し、か
つ複数箇所でエッチング液を抜き取りフィルタリングを
行い、短時間で貯液槽内のエッチング液を清浄化できる
という相違点を有する。
In contrast to the conventional wet etching apparatus described above, the present invention agitates the etching solution in the storage tank,
There is a difference in that it is possible to prevent a locally contaminated etchant from accumulating, and to extract and filter the etchant at a plurality of locations to clean the etchant in the storage tank in a short time.

〔課題を解決するための手段〕[Means for solving the problem]

前記目的を達成するため、本発明に係る半導体装置の
製造方法は、貯液槽内のエッチング液を攪拌するスター
ラと、該スターラによりエッチング液を攪拌しつつ、該
貯液槽の複数箇所よりエッチング液を順次抜き取り、該
エッチング液をフィルタリングしてから貯液槽内に再び
帰還させる機構と、所定の前記フィルタリングが終了し
た前記貯液槽のエッチング液をエッチング処理槽に給送
する機構とを有するものである。
In order to achieve the above object, a method for manufacturing a semiconductor device according to the present invention includes a stirrer for stirring an etchant in a liquid storage tank, and etching from a plurality of locations in the liquid storage tank while stirring the etchant with the stirrer. It has a mechanism for sequentially extracting the liquid, filtering the etching liquid and then returning it back to the liquid storage tank, and a mechanism for feeding the etching liquid in the liquid storage tank after the predetermined filtering to the etching processing tank. Things.

〔実施例〕〔Example〕

以下、本発明の実施例を図により説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(実施例1) 第1図は本発明の実施例1を示す構成図である。(First Embodiment) FIG. 1 is a configuration diagram showing a first embodiment of the present invention.

図において、貯液槽1の底部3箇所から配管をそれぞ
れ導出し、各配管にそれぞれ電磁弁4a,4b,4cを設けてポ
ンプ5、フィルタ6に接続し、該フィルタ6の吐出側を
電磁弁4fを介して貯液槽1に帰還させる。8は液補充ラ
イン、4dはその電磁弁、7は処理槽給液ライン、4eはそ
の電磁弁である。
In the figure, pipes are respectively led out from three places at the bottom of the liquid storage tank 1, and each pipe is provided with a solenoid valve 4a, 4b, 4c and connected to a pump 5 and a filter 6, and the discharge side of the filter 6 is connected to a solenoid valve. It is returned to the storage tank 1 via 4f. 8 is a liquid replenishing line, 4d is its solenoid valve, 7 is a processing tank liquid supply line, and 4e is its solenoid valve.

一方、貯液槽1の底部には、エッチング液を撹拌させ
るスターラ3,3を設置する。貯液槽1内にはエッチング
液2が満たされている。スターラ3は常時動作して貯液
槽1内のエッチング液2を撹拌している。液補充ライン
8よりエッチング液2は補充され、フィルタ6によって
フィルタリングされてからエッチング液2は貯液槽1に
給液される。給液時は電磁弁4a,4b,4c,4eは閉じ、電磁
弁4d,4fが開いて行われる。フィルタリングが充分行わ
れ、エッチング液2が清浄化された後、電磁弁4a.4b.4
d.4fを閉じ、電磁弁4c,4eを開くことにより、処理槽給
液ライン7からエッチング処理槽へとエッチング液2を
給液する。給液液補充時以外は電磁弁4d,4eは閉じてい
る。最初に電磁弁4c,4fが開き、電磁弁4a,4bを閉じた状
態でフィルタリングを10分行う。次に電磁弁4b,4fを開
き、電磁弁4a,4cを閉じた状態でフィルタリングを10分
行う。次に電磁弁4a,4fを開き、電磁弁4b,4cを閉じた状
態で10分間フィルタリングを行う。その後、また電磁弁
4c,4fを開き、電磁弁4a,4bを閉じた状態という様に繰り
返す。これにより、貯液槽内のエッチング液2を完全に
効率よくフィルタリングすることが可能となる。
On the other hand, at the bottom of the liquid storage tank 1, stirrs 3, 3 for stirring the etching liquid are installed. The etching solution 2 is filled in the liquid storage tank 1. The stirrer 3 constantly operates to stir the etching liquid 2 in the liquid storage tank 1. The etching solution 2 is replenished from the solution replenishing line 8 and filtered by the filter 6 and then supplied to the storage tank 1. At the time of liquid supply, the operation is performed with the solenoid valves 4a, 4b, 4c, and 4e closed and the solenoid valves 4d and 4f opened. After the filtering is sufficiently performed and the etching solution 2 is cleaned, the solenoid valves 4a.4b.4
d. By closing 4f and opening the solenoid valves 4c and 4e, the etching liquid 2 is supplied from the processing tank liquid supply line 7 to the etching processing tank. The solenoid valves 4d and 4e are closed except when replenishing the supply liquid. First, filtering is performed for 10 minutes with the solenoid valves 4c and 4f opened and the solenoid valves 4a and 4b closed. Next, filtering is performed for 10 minutes with the solenoid valves 4b and 4f opened and the solenoid valves 4a and 4c closed. Next, filtering is performed for 10 minutes with the solenoid valves 4a and 4f opened and the solenoid valves 4b and 4c closed. Then again the solenoid valve
4c, 4f are opened and the solenoid valves 4a, 4b are closed, and so on. This makes it possible to completely and efficiently filter the etching liquid 2 in the liquid storage tank.

(実施例2) 第2図は本発明の実施例2を示す構成図である。Embodiment 2 FIG. 2 is a configuration diagram showing Embodiment 2 of the present invention.

本実施例はポンプ5の後段に液体微粒子計測器9を接
続し、ポンプ5から送られてくるエッチング液2中のパ
ーティクルをリアルタイムでカウントし、パーティクル
数に応じて電磁弁コントローラ10にて電磁弁4a,4b,4cの
それぞれの開閉をコントロールするようにしたものであ
る。まず電磁弁4c,4fを開き、電磁弁4a,4bを閉じた状態
でのフィルタリングを、パーティクルのカウント数が規
格値α以下になるまで行う。次に電磁弁4b,4fを開き、
電磁弁4a,4cを閉じた状態でフィルタリングをパーティ
クルのカウント数が規格値α以下になるまで行う。次に
電磁弁4a,4fを開き、電磁弁4b,4cを閉じた状態でフィル
タリングをパーティクルのカウント数が規格値α以下に
なるまで行う。電磁弁4aの開いている時間が3分以上な
らば、上記3つの状態を何回もくり返す。電磁弁4aの開
いている時間が3分以内になった時点で、電磁弁コント
ローラ10は規格値β(β<α)になるまで前記3つの状
態をくり返すように切り換える。ただし、3つの各状態
は30分以上続く場合は規格値α,βまでいかなくとも次
の状態へと移行するものとする。規格値α,βは1〜50
0個/mlであり、パーティクルのサイズは0.2μm以上の
ものをカウントする。この実施例では、貯液槽1内の各
部分の液の汚れの程度によってその部分のフィルタリン
グ時間を決めるため、フィルタリングが充分行われた時
点で次の場所のフィルタリングに移行し、最も効果的な
時間でフィルタリングを実施できる利点がある。
In the present embodiment, a liquid fine particle measuring device 9 is connected to the subsequent stage of the pump 5 to count particles in the etching solution 2 sent from the pump 5 in real time, and the electromagnetic valve controller 10 controls the electromagnetic valve according to the number of particles. The opening and closing of each of 4a, 4b, and 4c is controlled. First, the filtering with the solenoid valves 4c and 4f opened and the solenoid valves 4a and 4b closed is performed until the particle count becomes equal to or smaller than the standard value α. Next, open the solenoid valves 4b and 4f,
Filtering is performed with the solenoid valves 4a and 4c closed until the particle count becomes equal to or smaller than the standard value α. Next, while the solenoid valves 4a and 4f are opened and the solenoid valves 4b and 4c are closed, filtering is performed until the particle count becomes equal to or smaller than the standard value α. If the opening time of the solenoid valve 4a is 3 minutes or more, the above three states are repeated many times. When the time during which the solenoid valve 4a is open becomes less than three minutes, the solenoid valve controller 10 switches so as to repeat the above three states until the standard value β (β <α) is satisfied. However, if each of the three states lasts for 30 minutes or more, the state transitions to the next state without reaching the standard values α and β. Standard values α and β are 1 to 50
The number of particles is 0 / ml, and those having a particle size of 0.2 μm or more are counted. In this embodiment, since the filtering time of each part in the liquid storage tank 1 is determined by the degree of contamination of the liquid, the filtering is shifted to the next place when the filtering is sufficiently performed, and the most effective method is performed. There is an advantage that filtering can be performed in time.

第4図に本発明の実施例2の貯液槽と、従来の貯液槽
のフィルタリングによるエッチング液中のパーティクル
数の変化をグラフにして示してある。従来の貯液槽内の
パーティクル数が10個/ml以下になるのに10時間もかか
るのに対し、本発明の実施例2の貯液槽内のパーティク
ル数が10個/ml以下になるのに6時間で済み、フィルタ
リングに要する時間を短縮できることが分った。
FIG. 4 is a graph showing a change in the number of particles in the etching solution due to filtering of the liquid storage tank according to the second embodiment of the present invention and a conventional liquid storage tank. While it takes 10 hours for the number of particles in the conventional liquid storage tank to become 10 particles / ml or less, the number of particles in the liquid storage tank of the second embodiment of the present invention becomes 10 particles / ml or less. It took only 6 hours, and it was found that the time required for filtering could be reduced.

〔発明の効果〕〔The invention's effect〕

以上説明したように本発明はウェットエッチング装置
の貯液槽内にスターラを設置することにより、貯液槽内
のエッチング液の撹拌を行い、局部的なエッチング液2
のよどみを防止する効果がある。さらに複数箇所におい
てエッチング液を抜き取り、フィルタリングを実施して
いるため、貯液槽内のエッチング液を効率よく完全な清
浄化を行える効果がある。短時間でエッチング液を清浄
化できるため、安定したウェットエッチング装置の稼動
が実現でき、安定した半導体素子の製造が行えるという
効果がある。
As described above, the present invention stirs the etching liquid in the liquid storage tank by installing the stirrer in the liquid storage tank of the wet etching apparatus, and allows the local etching liquid 2 to be stirred.
It has the effect of preventing stagnation. Further, since the etching solution is extracted at a plurality of locations and filtering is performed, there is an effect that the etching solution in the storage tank can be efficiently and completely cleaned. Since the etchant can be cleaned in a short time, stable operation of the wet etching apparatus can be realized, and there is an effect that a stable semiconductor element can be manufactured.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の実施例1を示す構成図、第2図は実施
例2を示す構成図、第3図は従来の貯液槽を示す構成
図、第4図は本発明の実施例2の貯液槽と、従来の貯液
槽のフィルタリングによるエッチング液中のパーティク
ル数の変化を示す図である。 1……貯液槽、2……エッチング液 3……スターラ 4a,4b,4c,4d,4e,4f……電磁弁 5……ポンプ、6……フィルタ 7……処理槽給液ライン、8……液補充ライン 9……液体微粒子計測器 10……電磁弁コントローラ
1 is a block diagram showing a first embodiment of the present invention, FIG. 2 is a block diagram showing a second embodiment, FIG. 3 is a block diagram showing a conventional liquid storage tank, and FIG. 4 is an embodiment of the present invention. FIG. 2 is a diagram showing a change in the number of particles in an etching solution due to filtering of a liquid storage tank of No. 2 and a conventional liquid storage tank. DESCRIPTION OF SYMBOLS 1 ... Storage tank, 2 ... Etching liquid 3 ... Stirrer 4a, 4b, 4c, 4d, 4e, 4f ... Solenoid valve 5 ... Pump, 6 ... Filter 7 ... Processing tank liquid supply line, 8 …… Replenishment line 9 …… Liquid particle measuring instrument 10 …… Solenoid valve controller

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01L 21/306 H01L 21/3063 H01L 21/308 ──────────────────────────────────────────────────の Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/306 H01L 21/3063 H01L 21/308

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】貯液槽内のエッチング液を攪拌するスター
ラと、該スターラによりエッチング液を攪拌しつつ、該
貯液槽の複数箇所よりエッチング液を順次抜き取り、該
エッチング液をフィルタリングしてから貯液槽内に再び
帰還させる機構と、所定の前記フィルタリングが終了し
た前記貯液槽のエッチング液をエッチング処理槽に給送
する機構とを有することを特徴とする半導体装置の製造
装置。
1. A stirrer for stirring an etching solution in a storage tank, and sequentially extracting the etching solution from a plurality of locations in the storage tank while stirring the etching solution with the stirrer, and filtering the etching solution. An apparatus for manufacturing a semiconductor device, comprising: a mechanism for returning to the inside of a liquid storage tank again; and a mechanism for feeding an etching solution in the liquid storage tank after the predetermined filtering to the etching processing tank.
JP63228022A 1988-09-12 1988-09-12 Semiconductor device manufacturing equipment Expired - Lifetime JP3077140B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63228022A JP3077140B2 (en) 1988-09-12 1988-09-12 Semiconductor device manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63228022A JP3077140B2 (en) 1988-09-12 1988-09-12 Semiconductor device manufacturing equipment

Publications (2)

Publication Number Publication Date
JPH0276229A JPH0276229A (en) 1990-03-15
JP3077140B2 true JP3077140B2 (en) 2000-08-14

Family

ID=16869968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63228022A Expired - Lifetime JP3077140B2 (en) 1988-09-12 1988-09-12 Semiconductor device manufacturing equipment

Country Status (1)

Country Link
JP (1) JP3077140B2 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59179788A (en) * 1983-03-31 1984-10-12 Fujitsu Ltd Chemical etching device
JPH0821563B2 (en) * 1986-05-02 1996-03-04 日本電気株式会社 Manufacturing equipment for semiconductor integrated circuit devices
JPH0354138Y2 (en) * 1986-10-30 1991-11-28
JPS63137430A (en) * 1986-11-29 1988-06-09 Nec Corp Semiconductor manufacture apparatus

Also Published As

Publication number Publication date
JPH0276229A (en) 1990-03-15

Similar Documents

Publication Publication Date Title
US4969991A (en) Water purifying and dispensing system
US4237538A (en) Electronic means for controlling the regeneration of resins in a resin type ion exchange device
Martinez Pillet et al. The distribution of sunspot decay rates
KR102603022B1 (en) Substrate liquid processing apparatus, substrate liquid processing method, and storage medium
JP3077140B2 (en) Semiconductor device manufacturing equipment
JPH0521413A (en) Semiconductor substrate cleaner and semiconductor substrate cleaning method
DE2558239A1 (en) Chemical cleaning bath for semiconductor - uses one container for all cleaning steps allowing water saving and permits ultrasonic cleaning where necessary
EP0588963B1 (en) Apparatus for processing photosensitive materials
US4145928A (en) Automated entrainment abundance sampler
US6264806B1 (en) Plating fluid replenishment system and method
DE3528617A1 (en) Control even for only part-loaded water treatment plants having measurement and/or test points for the water and/or the exchanger mass for matching the regular regenerations to the actual degree of exhaustion of the total exchanger mass
JPH0439063B2 (en)
JPS62156659A (en) Method and apparatus for cleaning
JPH1147582A (en) Immersion apparatus and method for immersion
JP3099907B2 (en) Semiconductor processing equipment
JPS62140423A (en) Manufacturing equipment for semiconductor integrated circuit device
JP3263222B2 (en) Electrodeposition paint supply device
JP2003502495A (en) Apparatus and method for replenishing copper for a copper precision plating system
JPH01263283A (en) Wet etching device
JPH0622477Y2 (en) Automatic water supply type ultrasonic cleaning device
JPS60183392A (en) Chemical injector with automatic washing mechanism
JPS6242535Y2 (en)
JP2894985B2 (en) Anaerobic biological treatment method and apparatus for organic wastewater
JPS5819471Y2 (en) Equipment for sampling
JPH05147865A (en) Hydraulic power unit of hydraulic elevator