CN216413009U - Wet etching device - Google Patents
Wet etching device Download PDFInfo
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- CN216413009U CN216413009U CN202220484817.0U CN202220484817U CN216413009U CN 216413009 U CN216413009 U CN 216413009U CN 202220484817 U CN202220484817 U CN 202220484817U CN 216413009 U CN216413009 U CN 216413009U
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Abstract
The utility model relates to the technical field of semiconductor device manufacturing, and provides a wet etching device, wherein an etching groove of the wet etching device comprises an outer groove and an inner groove, the inner groove is arranged in the outer groove, the inner groove is of a structure with an upper opening and used for containing a substrate to be etched, the upper surface of the inner groove is lower than that of the outer groove, the liquid level of an etching solution in the outer groove is lower than that of the inner groove in the etching process, the inner groove is filled with the etching solution, the etching solution in the inner groove overflows to the outer groove from the upper opening, a circulating pump pumps the etching solution in the outer groove back to the inner groove, the circulating flow of the etching solution is realized, the uniformity of the etching solution is improved, meanwhile, the etching solution and the surface of the substrate form relative motion, and the etching rate difference between longitudinal etching and transverse etching is reduced. The supporting structure is arranged to move up and down along the height direction of the inner groove and can drive the substrate to rotate 360 degrees, so that the concentration distribution of the etching solution is uniform, the uniformity of a temperature field is improved, and the etching rate and the performance uniformity of different positions are improved.
Description
Technical Field
The utility model relates to the technical field of semiconductor device manufacturing, in particular to a wet etching device.
Background
Wet etching (also called chemical etching) is a method of directly and chemically etching unprotected parts of a workpiece, such as a silicon wafer, a sapphire substrate, and the like, with a chemical solution. The wet etching machine is a device for performing wet etching.
In the prior art, in the etching process, a supporting structure for placing a substrate in a wet etching machine is in a static state or can shake up and down, and the etching uniformity is insufficient in any state. On one hand, the liquid has poor thermal conductivity, and the liquid temperature field is not uniformly distributed, so that the chemical reaction rate uniformity of the liquid and the substrate is influenced; on the other hand, the substrate crystal has anisotropy, and the anisotropic etching rate is consistent. The above two points cause insufficient etching uniformity of the substrate surface, which affects the substrate performance and further affects the yield of the subsequently formed devices.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned defects of the wet etching device in the prior art, the present invention provides a wet etching device, which comprises an etching tank and a supporting structure, wherein the etching tank comprises an outer tank and an inner tank, the inner tank is arranged in the outer tank, the inner tank is arranged in a structure with an opening at the upper part and used for accommodating a substrate to be etched, the upper surface of the inner tank is lower than the upper surface of the outer tank, during etching, the liquid level of an etching solution in the outer tank is lower than the upper surface of the inner tank, the etching solution in the inner tank overflows to the outer tank from the opening at the upper part of the inner tank, and a circulating pump pumps the etching solution in the outer tank back to the inner tank, so that the circulating flow of the etching solution is realized, the uniformity of the etching solution is improved, and the relative movement of the etching solution and the surface of the substrate is formed, so that the difference between the etching rates of longitudinal etching and transverse etching is reduced, and the uniformity of the surface of the etched substrate is improved. The supporting structure is used for placing the substrate to be etched and is arranged to move up and down along the height direction of the inner groove and can drive the substrate to rotate. The rotation of the support structure further improves the distribution uniformity of the etching solution.
According to an embodiment of the present invention, there is provided a wet etching apparatus including:
the etching tank comprises an outer tank and an inner tank, the inner tank is arranged in the outer tank, the inner tank is arranged in a structure with an upper opening and used for containing a substrate to be etched, the upper surface of the inner tank is lower than that of the outer tank, the liquid level of an etching solution in the outer tank is lower than that of the inner tank during etching, the etching solution in the inner tank overflows to the outer tank from the upper opening of the inner tank, a liquid return port is formed in one end, close to the bottom of the inner tank, of the side wall of the inner tank, and the etching solution in the outer tank flows back to the inner tank through the liquid return port; and
the supporting structure is arranged corresponding to the inner groove and can move up and down along the height direction of the inner groove so as to drive the substrate to enter the etching liquid in the inner groove to start etching or drive the substrate to leave from the etching liquid in the inner groove to stop etching.
Optionally, the etching apparatus further comprises a circulation pump configured to pump back the etching solution in the outer tank to the inner tank.
Optionally, heating devices are further arranged in the inner tank and the outer tank.
Optionally, the wet etching apparatus further comprises a control device, and the control device is connected to the heating device and is configured to control a heating temperature and a heating time of the heating device.
Optionally, the support structure comprises:
the supporting seat is used for placing the substrate; and
the rotating mechanism is connected with the supporting seat and is perpendicular to the surface of the supporting seat, and the rotating mechanism drives the supporting seat to rotate for 360 degrees.
Optionally, the wet etching apparatus further comprises a control device, connected to the rotation mechanism, for controlling the rotation rate and the rotation time of the rotation mechanism.
Optionally, the wet etching apparatus further comprises an etching liquid supply device connected to the inner tank for supplying the etching liquid to the inner tank.
Optionally, the wet etching apparatus further comprises a driving device for driving the supporting structure to move up and down along the height direction of the inner tank.
Optionally, the wet etching apparatus further comprises a sensor disposed on the support base, and the sensor is configured to sense a conductivity of the substrate during the etching process to determine an etching endpoint.
As described above, the wet etching apparatus of the present invention has the following advantageous effects:
the etching groove of the wet etching device comprises an outer groove and an inner groove, the inner groove is arranged in the outer groove, the inner groove is of a structure with an opening in the upper part and used for containing a substrate to be etched, the upper surface of the inner groove is lower than that of the outer groove, the liquid level of an etching solution in the outer groove is lower than that of the inner groove in the etching process, the inner groove is filled with the etching solution, the etching solution in the inner groove overflows to the outer groove from the opening in the upper part, the circulating pump pumps the etching solution in the outer groove back to the inner groove, the circulating flow of the etching solution is realized, the uniformity of the etching solution is improved, meanwhile, the etching solution and the surface of the substrate form relative motion, the difference of etching rates of longitudinal etching and transverse etching is reduced, and the uniformity of the surface of the etched substrate is improved.
The supporting structure is used for placing the substrate to be etched and is arranged to move up and down along the height direction of the inner groove and can drive the substrate to rotate by 360 degrees. The rotation of the supporting structure increases the stirring of the etching solution, so that the concentration distribution of the etching solution is homogenized; secondly, the supporting structure stirs the etching solution, so that the uniformity of the temperature field of the etching solution is improved, and the etching speed and the uniformity of different positions are improved.
Drawings
Fig. 1 is a schematic structural diagram of a wet etching apparatus in the prior art.
FIG. 2 is a schematic structural diagram of a wet etching apparatus according to the present invention.
Fig. 3 is a schematic structural diagram of a wet etching apparatus according to an alternative embodiment of the utility model.
Fig. 4 is a schematic diagram showing the difference between the vertical etching rate and the lateral etching rate when the substrate is etched by using the wet etching apparatus of the prior art and the wet etching apparatus of the present invention.
FIG. 5 is a schematic diagram of roughness test value points of a substrate after wet etching.
Fig. 6 shows a schematic view of a substrate taken for roughness testing of the substrate after wet etching.
Element numbers are used for illustration.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The utility model is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As shown in fig. 1, the immersion type wet etching apparatus in the prior art includes an etch bath 010 and a supporting structure 020, and the supporting structure 020 is configured to be shaken up and down in the direction of the arrow shown in fig. 1. However, the liquid has poor thermal conductivity, and the liquid temperature field is not uniformly distributed, so that the chemical reaction rate uniformity of the liquid and the substrate is influenced; on the other hand, the substrate crystal has anisotropy, and the anisotropic etching rate is consistent. Resulting in insufficient substrate surface etch uniformity.
In view of the above-mentioned drawbacks in the prior art, the present invention provides a wet etching apparatus, as shown in fig. 2, the wet etching apparatus 100 includes an etching chamber 101 and a supporting structure 102. The etch tank 101 includes an outer tank 1011 and an inner tank 1012, the inner tank 1012 being disposed within the outer tank 1011, the inner tank 1012 being adapted to receive a substrate to be etched, and the inner tank 1012 having an opening 104 above the inner tank 1012, the support structure 102 being disposed within the inner tank 1012 from the opening 104.
Referring also to fig. 2, the upper surface of the inner tank 1012 is set lower than the upper surface of the outer tank 1011, and during etching, the etching liquid supply means 300 injects the etching liquid into the inner tank 1012 through the liquid delivery pipe 301, so that the inner tank 1012 is filled with the etching liquid and the etching liquid in the inner tank 1012 overflows into the outer tank 1011 from the upper opening 104. The surface of the etching solution in the outer tank 1011 is lower than the side wall of the inner tank 1012.
In an alternative embodiment, the wet etching apparatus 100 further comprises a circulation pump 108, and the circulation pump 108 pumps the etching solution in the outer tank 1011 back to the inner tank 1012. Optionally, the inner tank 1012 is withdrawn through the upper opening 104 of the inner tank 1012. Thereby, the etching solution in the etching chamber 101 is circulated in the direction indicated by the arrow a3 in fig. 2.
In another alternative embodiment of this embodiment, as shown in FIG. 3, the side wall of the inner tank 1012 is provided with the liquid return ports 103, the liquid return ports 103 are preferably disposed on the side wall of the inner tank 1012 near the bottom of the inner tank 1012, and the number of the liquid return ports 103 can be set according to the actual application. The liquid return port 103 is connected to a circulation pump, and the etching liquid in the outer tank 1011 is pumped back to the inner tank 1012 through the liquid return port 103. The etching solution is circulated in the direction indicated by the arrow a4 in fig. 3. Drawing the etching solution back into the inner tank 1012 through the return port increases the flow of the etching solution in the inner tank 1012.
In addition, the heating devices 106 are disposed in both the outer tank 1011 and the inner tank 1012 of the etching tank 101 to heat the etching solution and increase the etching rate. The heating device 106 may be a heating tube, a heating plate, or the like. The heating device 106 may be disposed in the inner tank 1012, e.g., on the bottom and/or side walls of the inner tank 1012, or may be disposed in both the outer tank 1011 and the inner tank 1012, e.g., on the bottom and/or side walls of the outer tank and the inner tank. The circular flow of the etching solution can improve the uniformity of the etching solution, improve the temperature uniformity of the etching solution, enable the etching solution and the surface of the substrate 200 to form relative motion, reduce the difference of the etching rates of the transverse etching and the longitudinal etching of the surface of the substrate, and improve the etching uniformity of the surface of the substrate.
Fig. 4 shows the substrate surface topography difference after etching the same batch of substrates (e.g., sapphire substrates) using the wet etching apparatus of the present invention and the prior art etching apparatus. The data of fig. 4 is derived from the leading, middle and trailing pieces 202, 203, 204 of fig. 6 at different positions of the support bed, each substrate taking 9 different data points on the single piece of substrate shown in fig. 5. As shown in fig. 5, these 9 data points may include data point 1 at the center of the substrate, four data points 2, 3, 4, 5 evenly distributed over the circumference of 1/2 at the radius of the substrate, and four data points 6, 7, 8, 9 evenly distributed over the circumference of the edge of the substrate. As can be seen from FIG. 4, the circulation of the etching solution reduces the rate difference between the longitudinal etching and the lateral etching, and reduces the roughness (Ra) of the surface of the etched substrate, and it is found by analysis that the roughness of the surface 201' of the substrate obtained by using the etching apparatus of the prior art shown in FIG. 1 is about 0.4 μm to 1.0 μm, whereas the roughness of the surface 201 of the substrate is improved to 0.3 μm to 0.5 μm after the etching by using the etching apparatus of the present invention, and the uniformity of the roughness of the single substrate is reduced from the original 10% to less than 5%.
As also shown in fig. 2 and 3, the support structure 102 of the wet etching apparatus 100 is disposed corresponding to the inner tank 1012 and moves up and down in the height direction of the inner tank 1012, i.e., the Z-axis direction shown in fig. 2 and 3, as indicated by the arrow a1, to drive a substrate placed on the support structure to be etched into the etching liquid in the inner tank 1012 to start etching, or to drive the substrate away from the etching liquid in the inner tank 1012 to stop etching, or to drive the substrate up and down in the etching liquid during etching, to increase the fluidity of the etching liquid. In an alternative embodiment of this embodiment, the support structure 102 comprises a support base 1021 and a rotation mechanism 1022, the support structure 102 is used for carrying the substrate 200 to be etched, the rotation mechanism 1022 is connected with the support base 1021 and is preferably fixedly arranged with the surface of the support base 1021, and the rotation mechanism 1022 can rotate 360 ° in the direction indicated by the arrow a2 shown in fig. 2 and 3, i.e. in the XY plane around the Z axis shown in fig. 2 and 3. The up-and-down movement and the rotation movement of the support structure are driven by a driving device 105, and the up-and-down movement and the 360 ° rotation movement may be performed separately or simultaneously. In addition, the wet etching apparatus 100 may further include a control device 109 connected to the support structure 102 and the heating device 106 through data lines, preferably connected to the driving device 105 of the support structure 102, for controlling parameters such as a moving time of the support structure moving up and down, a rotating time of the rotating motion, a rotating speed, and a heating temperature and a heating time of the heating device.
The rotational movement of the support structure 102 causes the support base and the substrate thereon to rotate together. The rotation increases the stirring of the etching solution, so that the concentration distribution of the etching solution is more uniform; and secondly, the stirring is carried out, so that the uniformity of the temperature field of the etching solution is improved, and the etching speed and performance uniformity of different positions on the surface of the substrate are improved. The detection shows that the rotation of the supporting structure can improve the etching rate of the substrate by 37.5%, and under the same etching parameters, the etching rate is improved from 0.4 μm/min to 0.55 μm/min, and the uniformity of the etching rate in the chip is improved from 30% to 10%.
In an alternative embodiment, the support 1021 may further be provided with a sensor 107, and the sensor 107 is preferably disposed on a side of the support 1021 on which the substrate is placed, and is disposed close to the substrate. The sensor 107 senses the conductivity of the substrate during the etching process to determine the etch endpoint. After the etching is finished, the supporting structure is driven by the driving device to move upwards, and the substrate 200 is taken away from the etching solution to finish the etching.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the utility model. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (9)
1. A wet etching apparatus, comprising:
the etching tank comprises an outer tank and an inner tank, the inner tank is arranged in the outer tank, the inner tank is arranged in a structure with an upper opening and used for containing a substrate to be etched, the upper surface of the inner tank is lower than that of the outer tank, the liquid level of an etching solution in the outer tank is lower than that of the inner tank during etching, the etching solution in the inner tank overflows to the outer tank from the upper opening of the inner tank, a liquid return port is formed in one end, close to the bottom of the inner tank, of the side wall of the inner tank, and the etching solution in the outer tank flows back to the inner tank through the liquid return port; and
the supporting structure is arranged corresponding to the inner groove and can move up and down along the height direction of the inner groove so as to drive the substrate to enter the etching liquid in the inner groove to start etching or drive the substrate to leave from the etching liquid in the inner groove to stop etching.
2. The wet etching apparatus of claim 1, further comprising a circulation pump configured to draw back the etching solution in the outer tank to the inner tank.
3. The wet etching apparatus of claim 1, wherein heating means are further disposed within the inner tank and the outer tank.
4. The wet etching apparatus according to claim 3, further comprising a control device connected to the heating device for controlling a heating temperature and a heating time of the heating device.
5. The wet etching apparatus of claim 1, wherein the support structure comprises:
the supporting seat is used for placing the substrate; and
the rotating mechanism is connected with the supporting seat and is perpendicular to the surface of the supporting seat, and the rotating mechanism drives the supporting seat to rotate for 360 degrees.
6. The wet etching apparatus of claim 5, further comprising a control device connected to the support structure for controlling the rotation rate and the rotation time of the rotation mechanism.
7. The wet etching apparatus of claim 1, further comprising an etching liquid supply connected to the inner tank for supplying the etching liquid to the inner tank.
8. The wet etching apparatus according to claim 5, further comprising a driving means for driving the support structure to move up and down in a height direction of the inner tank and/or driving rotation of the rotating mechanism.
9. The wet etching apparatus of claim 5, further comprising a sensor disposed on the support pedestal for sensing a conductivity of the substrate during etching to determine an etch endpoint.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220484817.0U CN216413009U (en) | 2022-03-08 | 2022-03-08 | Wet etching device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220484817.0U CN216413009U (en) | 2022-03-08 | 2022-03-08 | Wet etching device |
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| Publication Number | Publication Date |
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| CN216413009U true CN216413009U (en) | 2022-04-29 |
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| CN202220484817.0U Active CN216413009U (en) | 2022-03-08 | 2022-03-08 | Wet etching device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117976585A (en) * | 2024-04-01 | 2024-05-03 | 新美光(苏州)半导体科技有限公司 | Wet etching device and temperature regulation and control method |
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- 2022-03-08 CN CN202220484817.0U patent/CN216413009U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117976585A (en) * | 2024-04-01 | 2024-05-03 | 新美光(苏州)半导体科技有限公司 | Wet etching device and temperature regulation and control method |
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