JPH0352221B2 - - Google Patents

Info

Publication number
JPH0352221B2
JPH0352221B2 JP57132424A JP13242482A JPH0352221B2 JP H0352221 B2 JPH0352221 B2 JP H0352221B2 JP 57132424 A JP57132424 A JP 57132424A JP 13242482 A JP13242482 A JP 13242482A JP H0352221 B2 JPH0352221 B2 JP H0352221B2
Authority
JP
Japan
Prior art keywords
film
oxidation
oxide film
resistant
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57132424A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5922343A (ja
Inventor
Kikuo Yamabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57132424A priority Critical patent/JPS5922343A/ja
Publication of JPS5922343A publication Critical patent/JPS5922343A/ja
Publication of JPH0352221B2 publication Critical patent/JPH0352221B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0126—
    • H10W10/13—

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
JP57132424A 1982-07-29 1982-07-29 半導体装置の製造方法 Granted JPS5922343A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57132424A JPS5922343A (ja) 1982-07-29 1982-07-29 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57132424A JPS5922343A (ja) 1982-07-29 1982-07-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5922343A JPS5922343A (ja) 1984-02-04
JPH0352221B2 true JPH0352221B2 (cg-RX-API-DMAC10.html) 1991-08-09

Family

ID=15081048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57132424A Granted JPS5922343A (ja) 1982-07-29 1982-07-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5922343A (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103887161A (zh) * 2014-03-20 2014-06-25 上海华力微电子有限公司 一种抑制掺杂原子在栅介质中扩散的方法

Also Published As

Publication number Publication date
JPS5922343A (ja) 1984-02-04

Similar Documents

Publication Publication Date Title
JPH0312785B2 (cg-RX-API-DMAC10.html)
JPH0473296B2 (cg-RX-API-DMAC10.html)
JPS6252950B2 (cg-RX-API-DMAC10.html)
JPS5922342A (ja) 半導体装置の製造方法
JP3328600B2 (ja) バイポーラ及びｂｉｃｍｏｓデバイスの作製プロセス
JPH0352221B2 (cg-RX-API-DMAC10.html)
JPH0231468A (ja) 浮遊ゲート型半導体記憶装置の製造方法
JPS5933271B2 (ja) 半導体装置の製造方法
JPS6154661A (ja) 半導体装置の製造方法
JPH023306B2 (cg-RX-API-DMAC10.html)
JPH0155585B2 (cg-RX-API-DMAC10.html)
JPS628028B2 (cg-RX-API-DMAC10.html)
JP2722829B2 (ja) 半導体装置の製造方法
JP2774407B2 (ja) 半導体装置の製造方法
JPS628029B2 (cg-RX-API-DMAC10.html)
JPH06188259A (ja) 半導体装置の製造方法
JPS63170922A (ja) 配線方法
JPS62131538A (ja) 半導体装置の製造方法
JPH02135738A (ja) 半導体装置の製造方法
JPS59105367A (ja) Ｍｏｓ型トランジスタの製造方法
JPS62269352A (ja) 半導体装置の製造方法
JPS628023B2 (cg-RX-API-DMAC10.html)
JP2001035931A (ja) 半導体素子の製造方法
JPH0555204A (ja) 半導体装置の製造方法
JPS60251640A (ja) 半導体装置およびその製造方法