JPS628023B2 - - Google Patents

Info

Publication number
JPS628023B2
JPS628023B2 JP54147321A JP14732179A JPS628023B2 JP S628023 B2 JPS628023 B2 JP S628023B2 JP 54147321 A JP54147321 A JP 54147321A JP 14732179 A JP14732179 A JP 14732179A JP S628023 B2 JPS628023 B2 JP S628023B2
Authority
JP
Japan
Prior art keywords
oxide film
ion implantation
film
substrate
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54147321A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5670645A (en
Inventor
Shigeharu Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO ERU ESU AI GIJUTSU KENKYU KUMIAI filed Critical CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority to JP14732179A priority Critical patent/JPS5670645A/ja
Publication of JPS5670645A publication Critical patent/JPS5670645A/ja
Publication of JPS628023B2 publication Critical patent/JPS628023B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P90/1908—
    • H10W10/181—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP14732179A 1979-11-14 1979-11-14 Manufacture of semiconductor device Granted JPS5670645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14732179A JPS5670645A (en) 1979-11-14 1979-11-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14732179A JPS5670645A (en) 1979-11-14 1979-11-14 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5670645A JPS5670645A (en) 1981-06-12
JPS628023B2 true JPS628023B2 (cg-RX-API-DMAC10.html) 1987-02-20

Family

ID=15427532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14732179A Granted JPS5670645A (en) 1979-11-14 1979-11-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5670645A (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2563377B1 (fr) * 1984-04-19 1987-01-23 Commissariat Energie Atomique Procede de fabrication d'une couche isolante enterree dans un substrat semi-conducteur, par implantation ionique

Also Published As

Publication number Publication date
JPS5670645A (en) 1981-06-12

Similar Documents

Publication Publication Date Title
JP2558931B2 (ja) 半導体装置およびその製造方法
JPH0426542B2 (cg-RX-API-DMAC10.html)
US3679492A (en) Process for making mosfet's
JPS6214459A (ja) 半導体装置の製造方法
JPS61145868A (ja) 半導体装置の製造方法
JP3039978B2 (ja) 集積ｍｉｓｆｅｔデバイス中に電界分離構造及びゲート構造を形成する方法
US4170500A (en) Process for forming field dielectric regions in semiconductor structures without encroaching on device regions
JPH0298143A (ja) Ｌｄｄ構造ポリシリコン薄膜トランジスタの製造方法
JPS6252950B2 (cg-RX-API-DMAC10.html)
JPS628023B2 (cg-RX-API-DMAC10.html)
JPS58200554A (ja) 半導体装置の製造方法
JP2632159B2 (ja) 半導体装置の製造方法
JP2890550B2 (ja) 半導体装置の製造方法
JP2883242B2 (ja) 半導体装置の製造方法
KR0167674B1 (ko) 반도체 소자의 소자분리막 형성방법
JPS6092666A (ja) Ｍｉｓトランジスタの製造方法
JPS6154661A (ja) 半導体装置の製造方法
JPS628028B2 (cg-RX-API-DMAC10.html)
JP3229790B2 (ja) 半導体集積回路の製造方法
JP2720592B2 (ja) 半導体装置の製造方法
JPH0352221B2 (cg-RX-API-DMAC10.html)
JPS628029B2 (cg-RX-API-DMAC10.html)
JPH1126756A (ja) 半導体装置の製造方法
JPS62131538A (ja) 半導体装置の製造方法
JPH11289082A (ja) 半導体装置及び半導体装置の製造方法