JPH0351094B2 - - Google Patents

Info

Publication number
JPH0351094B2
JPH0351094B2 JP56101895A JP10189581A JPH0351094B2 JP H0351094 B2 JPH0351094 B2 JP H0351094B2 JP 56101895 A JP56101895 A JP 56101895A JP 10189581 A JP10189581 A JP 10189581A JP H0351094 B2 JPH0351094 B2 JP H0351094B2
Authority
JP
Japan
Prior art keywords
insulating film
gate insulating
thin film
silane
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56101895A
Other languages
English (en)
Japanese (ja)
Other versions
JPS583289A (ja
Inventor
Satoru Kawai
Toshiro Kodama
Kyoshi Ozawa
Nobuyoshi Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56101895A priority Critical patent/JPS583289A/ja
Publication of JPS583289A publication Critical patent/JPS583289A/ja
Publication of JPH0351094B2 publication Critical patent/JPH0351094B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP56101895A 1981-06-30 1981-06-30 薄膜トランジスタの製造方法 Granted JPS583289A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56101895A JPS583289A (ja) 1981-06-30 1981-06-30 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56101895A JPS583289A (ja) 1981-06-30 1981-06-30 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS583289A JPS583289A (ja) 1983-01-10
JPH0351094B2 true JPH0351094B2 (cs) 1991-08-05

Family

ID=14312650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56101895A Granted JPS583289A (ja) 1981-06-30 1981-06-30 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS583289A (cs)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60166435A (ja) * 1984-02-09 1985-08-29 Toyobo Co Ltd 配向ポリエステルフイルム
JPH0682839B2 (ja) * 1984-08-21 1994-10-19 セイコー電子工業株式会社 表示用パネルの製造方法
JPS61179721A (ja) * 1985-02-05 1986-08-12 Toyobo Co Ltd 配向ポリエステルフイルム
JPS61237622A (ja) * 1985-04-16 1986-10-22 Teijin Ltd ポリエステルフイルム
JPS6292371A (ja) * 1985-10-18 1987-04-27 Hitachi Ltd 薄膜トランジスタおよびその製造方法
JPS6375028A (ja) * 1986-09-18 1988-04-05 Toray Ind Inc 磁気記録媒体用ベ−スフイルム
JPH0659679B2 (ja) * 1989-09-01 1994-08-10 東レ株式会社 二軸配向熱可塑性樹脂フイルム
DE69323716T2 (de) * 1993-01-28 1999-08-19 Applied Materials Verfahren zur CVD-Beschichtung einer Mehrschichtstruktur in einer einzigen Kammer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5667751U (cs) * 1979-10-29 1981-06-05

Also Published As

Publication number Publication date
JPS583289A (ja) 1983-01-10

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