JPH0348652B2 - - Google Patents

Info

Publication number
JPH0348652B2
JPH0348652B2 JP58050396A JP5039683A JPH0348652B2 JP H0348652 B2 JPH0348652 B2 JP H0348652B2 JP 58050396 A JP58050396 A JP 58050396A JP 5039683 A JP5039683 A JP 5039683A JP H0348652 B2 JPH0348652 B2 JP H0348652B2
Authority
JP
Japan
Prior art keywords
film
polycrystalline silicon
emitter
base
silicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58050396A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59193059A (ja
Inventor
Keijiro Uehara
Hisayuki Higuchi
Tetsushi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP58050396A priority Critical patent/JPS59193059A/ja
Publication of JPS59193059A publication Critical patent/JPS59193059A/ja
Publication of JPH0348652B2 publication Critical patent/JPH0348652B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP58050396A 1983-03-28 1983-03-28 半導体装置の製造方法 Granted JPS59193059A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58050396A JPS59193059A (ja) 1983-03-28 1983-03-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58050396A JPS59193059A (ja) 1983-03-28 1983-03-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59193059A JPS59193059A (ja) 1984-11-01
JPH0348652B2 true JPH0348652B2 (enrdf_load_stackoverflow) 1991-07-25

Family

ID=12857711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58050396A Granted JPS59193059A (ja) 1983-03-28 1983-03-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59193059A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7290403B2 (ja) * 2018-08-07 2023-06-13 日東電工株式会社 複合体

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54155778A (en) * 1978-05-30 1979-12-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
JPS6028146B2 (ja) * 1979-12-12 1985-07-03 株式会社日立製作所 半導体装置の製造方法
JPS57188871A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS59193059A (ja) 1984-11-01

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