JPS628942B2 - - Google Patents

Info

Publication number

JPS628942B2

JPS628942B2 JP54113231A JP11323179A JPS628942B2 JP S628942 B2 JPS628942 B2 JP S628942B2 JP 54113231 A JP54113231 A JP 54113231A JP 11323179 A JP11323179 A JP 11323179A JP S628942 B2 JPS628942 B2 JP S628942B2

Authority

JP

Japan

Prior art keywords

layer

wiring

film

oxide film

forming

Prior art date

1979-09-04

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 229910052751 metal Inorganic materials 0.000 claims description 33
• 239000002184 metal Substances 0.000 claims description 33
• 238000005530 etching Methods 0.000 claims description 30
• 229910052581 Si3N4 Inorganic materials 0.000 claims description 28
• 238000009792 diffusion process Methods 0.000 claims description 28
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 28
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
• 229910052814 silicon oxide Inorganic materials 0.000 claims description 27
• 239000004065 semiconductor Substances 0.000 claims description 18
• 238000004519 manufacturing process Methods 0.000 claims description 16
• 238000002955 isolation Methods 0.000 claims description 14
• 239000000758 substrate Substances 0.000 claims description 13
• 230000015572 biosynthetic process Effects 0.000 claims description 10
• 239000011521 glass Substances 0.000 claims description 7
• 239000000463 material Substances 0.000 claims description 5
• 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
• 230000000873 masking effect Effects 0.000 claims 1
• 238000000034 method Methods 0.000 description 19
• 229920002120 photoresistant polymer Polymers 0.000 description 13
• QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
• 229910052782 aluminium Inorganic materials 0.000 description 9
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
• 230000010354 integration Effects 0.000 description 6
• 229920001721 polyimide Polymers 0.000 description 5
• 239000009719 polyimide resin Substances 0.000 description 5
• 229910052785 arsenic Inorganic materials 0.000 description 4
• 239000012535 impurity Substances 0.000 description 4
• DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 3
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
• 238000000137 annealing Methods 0.000 description 3
• -1 arsenic ions Chemical class 0.000 description 3
• 230000003647 oxidation Effects 0.000 description 3
• 238000007254 oxidation reaction Methods 0.000 description 3
• 238000000059 patterning Methods 0.000 description 3
• 238000000206 photolithography Methods 0.000 description 3
• 229910052710 silicon Inorganic materials 0.000 description 3
• 239000010703 silicon Substances 0.000 description 3
• OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
• OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
• RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
• 229910052796 boron Inorganic materials 0.000 description 2
• 238000000151 deposition Methods 0.000 description 2
• 239000000203 mixture Substances 0.000 description 2
• 229910052698 phosphorus Inorganic materials 0.000 description 2
• 239000011574 phosphorus Substances 0.000 description 2
• 239000000243 solution Substances 0.000 description 2
• 229910000838 Al alloy Inorganic materials 0.000 description 1
• 229910018125 Al-Si Inorganic materials 0.000 description 1
• 229910018182 Al—Cu Inorganic materials 0.000 description 1
• 229910018520 Al—Si Inorganic materials 0.000 description 1
• ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
• KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
• 230000001133 acceleration Effects 0.000 description 1
• 239000002253 acid Substances 0.000 description 1
• 229910045601 alloy Inorganic materials 0.000 description 1
• 238000007796 conventional method Methods 0.000 description 1
• 230000001419 dependent effect Effects 0.000 description 1
• 230000006866 deterioration Effects 0.000 description 1
• 238000001312 dry etching Methods 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• 230000005669 field effect Effects 0.000 description 1
• 239000007789 gas Substances 0.000 description 1
• 238000007654 immersion Methods 0.000 description 1
• 238000005468 ion implantation Methods 0.000 description 1
• 150000002500 ions Chemical class 0.000 description 1
• 230000008018 melting Effects 0.000 description 1
• 238000002844 melting Methods 0.000 description 1
• 150000002739 metals Chemical class 0.000 description 1
• 239000011259 mixed solution Substances 0.000 description 1
• 229910052750 molybdenum Inorganic materials 0.000 description 1
• 239000012299 nitrogen atmosphere Substances 0.000 description 1
• 229910052697 platinum Inorganic materials 0.000 description 1
• 238000004904 shortening Methods 0.000 description 1
• 238000000992 sputter etching Methods 0.000 description 1
• 238000007740 vapor deposition Methods 0.000 description 1
• 238000001039 wet etching Methods 0.000 description 1