JPH0347578B2 - - Google Patents
Info
- Publication number
- JPH0347578B2 JPH0347578B2 JP58203872A JP20387283A JPH0347578B2 JP H0347578 B2 JPH0347578 B2 JP H0347578B2 JP 58203872 A JP58203872 A JP 58203872A JP 20387283 A JP20387283 A JP 20387283A JP H0347578 B2 JPH0347578 B2 JP H0347578B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- strength
- tensile strength
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000011777 magnesium Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/432—Mechanical processes
- H01L2224/4321—Pulling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01203—3N purity grades, i.e. 99.9%
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/2076—Diameter ranges equal to or larger than 100 microns
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58203872A JPS6095947A (ja) | 1983-10-31 | 1983-10-31 | 半導体素子のボンデイング用Al線 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58203872A JPS6095947A (ja) | 1983-10-31 | 1983-10-31 | 半導体素子のボンデイング用Al線 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6095947A JPS6095947A (ja) | 1985-05-29 |
JPH0347578B2 true JPH0347578B2 (enrdf_load_stackoverflow) | 1991-07-19 |
Family
ID=16481105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58203872A Granted JPS6095947A (ja) | 1983-10-31 | 1983-10-31 | 半導体素子のボンデイング用Al線 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6095947A (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3510039B2 (ja) * | 1996-03-15 | 2004-03-22 | 株式会社デンソー | 半導体装置およびその製造方法 |
US6693350B2 (en) | 1999-11-24 | 2004-02-17 | Denso Corporation | Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure |
US6703707B1 (en) | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
JP4479121B2 (ja) | 2001-04-25 | 2010-06-09 | 株式会社デンソー | 半導体装置の製造方法 |
WO2025028382A1 (ja) * | 2023-07-31 | 2025-02-06 | 田中電子工業株式会社 | アルミニウム配線材及びその製造方法 |
-
1983
- 1983-10-31 JP JP58203872A patent/JPS6095947A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6095947A (ja) | 1985-05-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102107888B1 (ko) | 주철 용탕 처리 방법 | |
JPH0347578B2 (enrdf_load_stackoverflow) | ||
JPS63145729A (ja) | 半導体素子ボンデイング用金線 | |
JPS6130019B2 (enrdf_load_stackoverflow) | ||
JPH0443974B2 (enrdf_load_stackoverflow) | ||
JP4693028B2 (ja) | 切削性に優れたアルミニウム合金材の製造方法 | |
JPS6283445A (ja) | 鋳造用高力アルミニウム合金 | |
JPS6095946A (ja) | 半導体素子のボンデイング用Al線 | |
JPH0514014B2 (enrdf_load_stackoverflow) | ||
JPH0367813B2 (enrdf_load_stackoverflow) | ||
JP2002302727A (ja) | 導電用耐熱アルミニウム合金線及びその製造方法 | |
JPH0320065B2 (enrdf_load_stackoverflow) | ||
JPS6095952A (ja) | 半導体素子のボンデイング用Al線 | |
JPH0347579B2 (enrdf_load_stackoverflow) | ||
JPS6095953A (ja) | 半導体素子のボンデイング用Al線 | |
JPS6095951A (ja) | 半導体素子のボンデイング用Al線 | |
JPS6095949A (ja) | 半導体素子のボンデイング用Al線 | |
JPH048944B2 (enrdf_load_stackoverflow) | ||
JPH0454383B2 (enrdf_load_stackoverflow) | ||
JPS63128145A (ja) | 切削性に優れた耐摩耗性鍛造用アルミニウム合金 | |
JPH02263939A (ja) | 高導電率高耐熱性銅合金及びその製造方法 | |
JPH02219248A (ja) | 半導体装置用銅ボンディングワイヤ | |
JPS62211335A (ja) | 快削無酸素銅 | |
JPS62101061A (ja) | 半導体素子のボンデイング用金線 | |
JPH01159339A (ja) | ボンディングワイヤ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |