JPS6095947A - 半導体素子のボンデイング用Ａｌ線 - Google Patents

半導体素子のボンデイング用Ａｌ線

Info

Publication number
JPS6095947A
JPS6095947A JP58203872A JP20387283A JPS6095947A JP S6095947 A JPS6095947 A JP S6095947A JP 58203872 A JP58203872 A JP 58203872A JP 20387283 A JP20387283 A JP 20387283A JP S6095947 A JPS6095947 A JP S6095947A
Authority
JP
Japan
Prior art keywords
wire
bonding
addition
tensile strength
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58203872A
Other languages
English (en)
Other versions
JPH0347578B2 (ja
Inventor
Yasuo Fukui
福井　康夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP58203872A priority Critical patent/JPS6095947A/ja
Publication of JPS6095947A publication Critical patent/JPS6095947A/ja
Publication of JPH0347578B2 publication Critical patent/JPH0347578B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01203—3N purity grades, i.e. 99.9%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/2076—Diameter ranges equal to or larger than 100 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は半導体素子のボンディング用ＡＪＩ！、詳しく
は線径が０．１〜Ｑ、５１１１１ＲΦのボンディング用
ＡＪ、線の改良に関する。
従来、パワートランジスタ、サイリスク等の高出力の半
導体素子の配線用リード線として線径が０．１〜０．５
ＩＩＩｌｌΦ、一般的には０．２〜ｎＱＮＩＩ山出慮妬
膚Δ■ｌ繍田六ｈＴいス−しかるに高純度Δ叉線は軟か
すぎて所定の引張り強度が得られないために、線引き１
０１時およびボンディング作業時において断線づる不具
合があり、この引張り強度を改善づるために高純度ＡＪ
に各種の元素を添加することが考えられている。
しかしながら、ボンディング用Ａ、Ｌ線は引張り強度を
大きくして硬くなりすぎた場合には、ボンディング時に
おいて、チップ割れを起したり、潰れ巾の不安定、ネッ
ク切れの原因となり、あるいは添加元素の偏析によって
ボンディング強度がバラ付いて品質の安定が得られない
などボンディング特性の低下をきたす不具合がある。
しかして本発明は多くの実験結果よりボンディング特性
に最適な機械的特性、詳しくは熱処理（３５０℃、３０
分）後にＪ５ける△Ｊ、線の引張り強度が４．５〜　Ｂ
、５ｋａ／ｍｍ’　ｒあルコとを知り、該強度が得られ
る添加元素及びその添加ｍ＜含有量）をめたものである
。
又、上記引張り強度を改ｐＪツる添加元素は−種単体の
場合には最適強度を得るために多量を添加しなければな
らず、例えばシリコン単体の場合は０．０１６〜０．０
３８ｗｔ％、マグネシウム単体の場合は０．０１〜０．
０２５ｗｔ％、であって好ましくない。
本発明は断る従来事情に鑑み、二種の選択した元素を添
加させることにより、その相乗効果によって少ない添加
量でボンディング特性に優れたＡＬ線を提供せんとする
ものであり、高純１＊Ａ叉に０．００１５〜０．００５
ｗｔ％３ｉと０．００１５〜０．００５ｗｔ％ＭＯとを
添加し、両者の含有量を０．００３〜ｏ、ｏｏａｗｔ％
ならしめたことを特徴とする。
上記△又は９９．９９％以上の＾純度のものを用い、３
ｉ及びＭｇは夫々Ａｉの引張り強度を高める。
３ｉ及びＭ９の添加統計量が０．００３ｗｔ％未満では
前記適正強度に至らず、ｏ、ｏｏｓｗｔ％を越える場合
には前記適正強度を越えてへ叉轢が硬くなりすぎチップ
割れやボンディング強度のバラ付きが生ずるなどボンデ
ィング特性が低下する。
以下に実施例を示す。
各試料は△叉合金を溶解鋳造し、線引Ｑ’　＋１１１　
Ｉにより直径０．２ＩＩＩＩｌｌΦのＡ、を線としたも
のである。
各試料の添加元素及びその添加量とその熱処理（３５０
℃、３０分）後の引張り強度とを次表に承り。各試料に
は残部に不可避なる不純物を含むものである。
この結果ＳｉとＭａとの総計含有量を０．００３〜ｏ、
ｏｏａｗｔ％と選定した。
特許出願人　田中電子工業株式会社

Claims (1)

    【特許請求の範囲】
  1. 線径が０．１〜Ｑ、５１１１１Φのボンディング用ＡＪ
    、線であって、高純度ＡＪ、に０．００１５〜０．００
    ５ｗｔ％のシリコン（Ｓｉ　）と０．００１５〜０．０
    ０５ｗｔ％のマグネシウム（Ｍ（１）とを添加し、両者
    の含有量が０．００３〜０．００８ｗｔ％であることを
    特徴とする半導体素子のボンディング用ＡＪ、線。
JP58203872A 1983-10-31 1983-10-31 半導体素子のボンデイング用Ａｌ線 Granted JPS6095947A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58203872A JPS6095947A (ja) 1983-10-31 1983-10-31 半導体素子のボンデイング用Ａｌ線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58203872A JPS6095947A (ja) 1983-10-31 1983-10-31 半導体素子のボンデイング用Ａｌ線

Publications (2)

Publication Number Publication Date
JPS6095947A true JPS6095947A (ja) 1985-05-29
JPH0347578B2 JPH0347578B2 (ja) 1991-07-19

Family

ID=16481105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58203872A Granted JPS6095947A (ja) 1983-10-31 1983-10-31 半導体素子のボンデイング用Ａｌ線

Country Status (1)

Country Link
JP (1) JPS6095947A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801445A (en) * 1996-03-15 1998-09-01 Denso Corporation Semiconductor device and method of manufacturing same
US6693350B2 (en) 1999-11-24 2004-02-17 Denso Corporation Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
US6703707B1 (en) 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
US6946730B2 (en) 2001-04-25 2005-09-20 Denso Corporation Semiconductor device having heat conducting plate

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801445A (en) * 1996-03-15 1998-09-01 Denso Corporation Semiconductor device and method of manufacturing same
US6693350B2 (en) 1999-11-24 2004-02-17 Denso Corporation Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
US6703707B1 (en) 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
US6798062B2 (en) 1999-11-24 2004-09-28 Denso Corporation Semiconductor device having radiation structure
US6891265B2 (en) 1999-11-24 2005-05-10 Denso Corporation Semiconductor device having radiation structure
US6960825B2 (en) 1999-11-24 2005-11-01 Denso Corporation Semiconductor device having radiation structure
US6967404B2 (en) 1999-11-24 2005-11-22 Denso Corporation Semiconductor device having radiation structure
US6992383B2 (en) 1999-11-24 2006-01-31 Denso Corporation Semiconductor device having radiation structure
US6998707B2 (en) 1999-11-24 2006-02-14 Denso Corporation Semiconductor device having radiation structure
US6946730B2 (en) 2001-04-25 2005-09-20 Denso Corporation Semiconductor device having heat conducting plate
US6963133B2 (en) 2001-04-25 2005-11-08 Denso Corporation Semiconductor device and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH0347578B2 (ja) 1991-07-19

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