JPH0337735B2 - - Google Patents
Info
- Publication number
- JPH0337735B2 JPH0337735B2 JP59075885A JP7588584A JPH0337735B2 JP H0337735 B2 JPH0337735 B2 JP H0337735B2 JP 59075885 A JP59075885 A JP 59075885A JP 7588584 A JP7588584 A JP 7588584A JP H0337735 B2 JPH0337735 B2 JP H0337735B2
- Authority
- JP
- Japan
- Prior art keywords
- collector
- emitter
- base
- conductivity type
- potential barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005036 potential barrier Methods 0.000 claims description 55
- 239000004065 semiconductor Substances 0.000 claims description 46
- 230000000694 effects Effects 0.000 claims description 16
- 230000005641 tunneling Effects 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 description 22
- 238000010586 diagram Methods 0.000 description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 15
- 239000010931 gold Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 230000003321 amplification Effects 0.000 description 8
- 238000003199 nucleic acid amplification method Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005640 de Broglie wave Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59075885A JPS60219766A (ja) | 1984-04-17 | 1984-04-17 | 半導体装置 |
| CA000478704A CA1237824A (en) | 1984-04-17 | 1985-04-10 | Resonant tunneling semiconductor device |
| EP85400744A EP0159273B1 (en) | 1984-04-17 | 1985-04-16 | Semiconductor device |
| DE8585400744T DE3583302D1 (de) | 1984-04-17 | 1985-04-16 | Halbleiteranordnung. |
| KR1019850002594A KR900004466B1 (ko) | 1984-04-17 | 1985-04-17 | 반도체 장치 |
| US07/059,216 US4958201A (en) | 1984-04-17 | 1987-06-05 | Resonant tunneling minority carrier transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59075885A JPS60219766A (ja) | 1984-04-17 | 1984-04-17 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60219766A JPS60219766A (ja) | 1985-11-02 |
| JPH0337735B2 true JPH0337735B2 (zh) | 1991-06-06 |
Family
ID=13589189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59075885A Granted JPS60219766A (ja) | 1984-04-17 | 1984-04-17 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60219766A (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6154665A (ja) * | 1984-08-24 | 1986-03-18 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置及びその製造方法 |
| US4760579A (en) * | 1986-07-01 | 1988-07-26 | Hughes Aircraft Company | Quantum well laser with charge carrier density enhancement |
| JPS6331165A (ja) * | 1986-07-18 | 1988-02-09 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 共鳴トンネリング半導体デバイス |
| JPS63140570A (ja) * | 1986-12-03 | 1988-06-13 | Hitachi Ltd | 半導体装置 |
| JPH0795675B2 (ja) * | 1987-02-14 | 1995-10-11 | 富士通株式会社 | 比較回路 |
| JPH07101817B2 (ja) * | 1987-03-06 | 1995-11-01 | 富士通株式会社 | 半導体装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52105785A (en) * | 1976-02-27 | 1977-09-05 | Max Planck Gesellschaft | Multiilayer semiconductor element |
| JPS583277A (ja) * | 1981-06-30 | 1983-01-10 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | 半導体共鳴トンネル３極装置 |
-
1984
- 1984-04-17 JP JP59075885A patent/JPS60219766A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52105785A (en) * | 1976-02-27 | 1977-09-05 | Max Planck Gesellschaft | Multiilayer semiconductor element |
| JPS583277A (ja) * | 1981-06-30 | 1983-01-10 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | 半導体共鳴トンネル３極装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60219766A (ja) | 1985-11-02 |
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