JPH0330440A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH0330440A
JPH0330440A JP1163990A JP16399089A JPH0330440A JP H0330440 A JPH0330440 A JP H0330440A JP 1163990 A JP1163990 A JP 1163990A JP 16399089 A JP16399089 A JP 16399089A JP H0330440 A JPH0330440 A JP H0330440A
Authority
JP
Japan
Prior art keywords
solder
plate
lead
semiconductor
weight ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1163990A
Other languages
English (en)
Other versions
JP2609724B2 (ja
Inventor
Katsuyoshi Izawa
井沢　勝嘉
Ryoichi Kobayashi
良一 小林
Masayuki Ozawa
小沢　正之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1163990A priority Critical patent/JP2609724B2/ja
Priority to KR1019900008973A priority patent/KR0183010B1/ko
Priority to GB9014392A priority patent/GB2233593B/en
Priority to DE4020577A priority patent/DE4020577C3/de
Publication of JPH0330440A publication Critical patent/JPH0330440A/ja
Priority to US07/774,373 priority patent/US5182628A/en
Application granted granted Critical
Publication of JP2609724B2 publication Critical patent/JP2609724B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Engineering & Computer Science (AREA)
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に関するものである。
〔従来の技術〕
一般に半導体装置の接合部はハンダによって接合されて
いる。このような技術は例えば特開昭６１−１３９０４
７号公報等に開示されている。
〔発明が解決しようとする課題〕
ところが、上述したような半導体装置においては内燃機
関のエンジンルー１１内に配置される場合もあり、熱サ
イクルに対する問題を解決する必要がある。
例えば、従来使用されていた半導体装置においてはいわ
ゆる高温ハンダと呼ばれるＰ　ｂ　／　Ｓ　ｎ　／Ａｇ
合金ハンダ（重量比９３．６１５／１．５）を用いてい
たが、実際に絶縁板と放熱板の間のハンダにクラックが
生じてしまうといった問題があった。
〔課題を解決するための手段〕
このような問題点をなくすため、本発明においては少な
くとも半導体装置の絶縁板と放熱板の間を重量比５０±
５１５０乎５を有する釦−スズ合金ハンダによって接合
することを特徴とするものである。
〔作用〕
このように重量比５０±５１５０乎５を有する鉛−スズ
合金を用いれば熱サイクルに極めて強い半導体装置が得
られた。
〔実施例〕
以下本発明の実施例を図面に従い説明する。
第１図は半導体を用いた内燃機関用点火装置の構成図で
、モールドケース１と銅よりなる放熱板８０によって収
納体１００が形成されている。ここでモールドケース１
と放熱板８０とは接着剤１１で接着されている。
収納体１００の内部にはパワースイッチ半導体部１１０
と増幅半導体部１２０が収納され、それぞれはり−ド１
３によって接続されており、更に増幅半導体部１２０は
外部端子１２と接続されている。
増幅半導体部１２０は増幅回路基板９よりなり、これは
接着剤１０により放熱板８０に接着固定されている。
一方、パワースイッチ半導体部１１０は半導体素子２、
放熱機能を有するモリブデン板４０、絶縁板であるアル
ミナ板６０よりなり、これらはそれぞれハンダによって
接合されている。ここで、半導体素子２とモリブデン板
４０とは高温ハンダと呼ばれるｐｂ／Ｓｎ／Ａｇ合金ハ
ンダ３（重量比９３．５１５／１．５）で接合され、モ
リブデン板４０とアルミナ板６０及び放熱板８ｏの間は
重量比５０±５１５０壬５を有する鉛−スズ合金ハンダ
７によって接合されている。
次に、この重量比５０±５　／　５０　Ｔｒ　５を有す
る鉛−スズ合金ハンダを使用した半導体装置の耐久試験
について実施したので説明する。
耐久試験では厚さ３．２ｍのニッケルめっき銅板（放熱
板）上に８．５ｍ角、厚さ０．５１のタングステン−ニ
ッケルめっきアルミナ板及び８．２Ｗａ角、厚さ０．２
５−の半導体素子（シリコンチップ）を配置し、それぞ
れの間を厚さ１００μｍの鉛−スズの配分比をかえたハ
ンダによって接合した試験片を用いて、−５５℃状態に
１時間放置、＋１５０℃状態に１時間放置を１サイクル
としてアルミナ板と銅板の間にクラックが生じるサイク
ル数をプロットした。
第２図は上述の耐久試験の結果を示しており、横軸は釦
−スズの重量比、縦軸は平均寿命（クラックが生じるま
でのサイクル数）を示している。
この第２図から理解できるように釦−スズ合金ハンダの
重量比が５０±５１５ｏ王５のものを使用するとほぼ２
０００サイクルに渡ってクラックの発生が認められなか
った。
尚、第１図の実施例では放熱板８０とアルミナ板６０及
びモリブデン板４ｏの間を重量比５０±５１５０壬５の
鉛−スズ合金ハンダ７を用いて接合したが、半導体素子
２とモリブデン板４０の間も重量比５０±５１５０乎５
の鉛−スズ合金ハンダを用いて接合しても良い。
ただ、この重量比５ｏ±５１５０壬５の鉛−スズ合金ハ
ンダは２００℃以上では接合力が低下する傾向にあるの
で、できるならば２００℃以下の条件が達成される部分
に適用するのが好ましい。
特に、この種の半導体装置においては半導体素子の熱を
逃がすのに絶縁板６０、放熱板８０に向って放熱特性を
良くするべく接触面積を大きくしている。したがって、
この大きい接触面積によってよりクラックが発生しやす
くなるので、少なくとも放熱板８０と絶縁板６０の間に
は重量比５０±５１５０乎５の鉛−スズ合金ハンダを用
いる。
次に第３図ないし第５図に基づいて本発明の実施例の変
形例を説明する。
第３図は半導体素子２と酸化ベリリウムよりなる絶縁板
６１を高温ハンダ３で接合し、鋼板８１とアルミニウム
板８２を接合した放熱板と先の酸化ベリリウムよりなる
絶縁板６１とは重量比５０±５１５０壬５よりなる鉛−
スズ合金ハンダ７で接合している。
第４図は半導体素子２と銅よりなる放熱板４１及びアル
ミナよりなる絶縁板６０とを高温ハンダ３で接合し、ア
ルミナよりなる絶縁板６０とアルミニウムよりなる放熱
板８２とは重量比５０±５１５０乎５の鉛−スズ合金ハ
ンダ７によって接合している。
第５図は半導体素子２と窒化アルミニウムよりなる絶縁
板６２を高温ハンダ３で接合し、窒化アルミニウムより
なる絶縁板６２とアルミニウムよりなる放熱板８２とは
重量比５０±５１５０乎５の鉛−スズ合金ハンダ７によ
って接合されている。
尚、これらの変形例においては絶縁板と放熱板の間を重
量比５０±５　／　５０　”Ｆ’　５の鉛−スズ合金ハ
ンダ７で接合しているが、使用温度が２００℃以下であ
れば絶縁板と半導体素子の間も重量比５０±５１５０壬
５の鉛−スズ合金ハンダで接合しても良いことは先に述
べた通りである。
また、実施例ではパワースイッチ半導体素子の例につい
て説明したが、これに限らず他の半導体素子についても
適用が可能である。
〔発明の効果〕
以上述べたように本発明によれば、熱サイクルが加わる
状態で絶縁板と放熱板の間のハンダにクランクが生じる
ことを少なくでき、実用上きわめて有効な半導体装置を
得ることができる。
【図面の簡単な説明】
第１図は本発明になる半導体装置の構造図、第２図は耐
久試験の結果を示す図、第３図ないし第５図は本発明の
他の変形例を示す図である。 ２・・・半導体素子、３・・・高温ハンダ、７・・・重
量比５０±５１５０壬５の鉛−スズ合金ハンダ、６０第
２図 第１図 ３ｎ組成（ｗｔ、％〕

Claims (1)

  1. 【特許請求の範囲】 １、（ａ）、アクチュエータ等を駆動する半導体駆動素
    子； （ｂ）、前記半導体駆動素子とハンダを介して直接ある
    いはハンダ、放熱板及びハンダ を介して接合された絶縁板； （ｃ）、前記絶縁板と重量比５０±５／５０■５を有す
    る鉛−スズ合金ハンダを介して 接合された金属放熱板 とよりなる半導体装置。 ２、（ａ）、アクチュエータ等を駆動する半導体駆動素
    子； （ｂ）、前記半導体駆動素子とハンダを介して直接ある
    いはハンダ、放熱板及びハンダ を介して接合された絶縁板； （ｃ）、前記絶縁板と下記に示す特性を備えたハンダに
    よつて接合された金属放熱板 ＊前記ハンダは−５５℃下で１時間放置、 ＋１５０℃下で１時間放置した状態を １サイクルとして、ほぼ２０００サイ クルを経過してもクラックが発生しな い鉛−スズ合金ハンダである。 とよりなる半導体装置。
JP1163990A 1989-06-28 1989-06-28 半導体装置 Expired - Fee Related JP2609724B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1163990A JP2609724B2 (ja) 1989-06-28 1989-06-28 半導体装置
KR1019900008973A KR0183010B1 (ko) 1989-06-28 1990-06-19 반도체장치
GB9014392A GB2233593B (en) 1989-06-28 1990-06-28 Semiconductor device
DE4020577A DE4020577C3 (de) 1989-06-28 1990-06-28 Halbleiteranordnung mit Lötverbindung zwischen Halbleiterbauelement, Isolierplatte und Wärmeableitplatte
US07/774,373 US5182628A (en) 1989-06-28 1991-10-10 Semiconductor device having particular solder interconnection arrangement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1163990A JP2609724B2 (ja) 1989-06-28 1989-06-28 半導体装置

Publications (2)

Publication Number Publication Date
JPH0330440A true JPH0330440A (ja) 1991-02-08
JP2609724B2 JP2609724B2 (ja) 1997-05-14

Family

ID=15784666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1163990A Expired - Fee Related JP2609724B2 (ja) 1989-06-28 1989-06-28 半導体装置

Country Status (4)

Country Link
JP (1) JP2609724B2 (ja)
KR (1) KR0183010B1 (ja)
DE (1) DE4020577C3 (ja)
GB (1) GB2233593B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0659998A3 (en) * 1993-12-27 1996-05-15 Hitachi Ltd Ignition device for an internal combustion engine.

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136304A (ja) * 1991-11-14 1993-06-01 Mitsubishi Electric Corp 半導体モジユール及びそれを用いたパワー制御装置
JP2838625B2 (ja) * 1992-09-08 1998-12-16 株式会社日立製作所 半導体モジュール
DE4300516C2 (de) * 1993-01-12 2001-05-17 Ixys Semiconductor Gmbh Leistungshalbleitermodul
DE19609929B4 (de) * 1996-03-14 2006-10-26 Ixys Semiconductor Gmbh Leistungshalbleitermodul

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5344176A (en) * 1976-10-04 1978-04-20 Hitachi Cable Ltd Clad solder for semiconductor device
JPS57114242A (en) * 1981-01-07 1982-07-16 Hitachi Ltd Semiconductor device
JPS5982734A (ja) * 1982-11-04 1984-05-12 Hitachi Ltd 絶縁型半導体装置
JPS6010633A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
JPS6117355A (ja) * 1984-07-03 1986-01-25 Hitachi Ltd 異種部材のはんだ接合方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1122238A (en) * 1964-11-18 1968-07-31 English Electric Co Ltd Semi-conductor device
DE3009925C2 (de) * 1980-03-14 1984-03-08 Siemens AG, 1000 Berlin und 8000 München Kontaktstück für einen elektrischen Vakuumschalter
DE3513530A1 (de) * 1984-06-01 1985-12-05 Bbc Brown Boveri & Cie Verfahren zur herstellung von leistungshalbleitermodulen mit isoliertem aufbau
DE3523808C3 (de) * 1984-07-03 1995-05-04 Hitachi Ltd Verfahren zum Löten von Teilen einer elektronischen Anordnung aus unterschiedlichen Werkstoffen und dessen Verwendung
JPS61139047A (ja) * 1984-12-11 1986-06-26 Toshiba Corp 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5344176A (en) * 1976-10-04 1978-04-20 Hitachi Cable Ltd Clad solder for semiconductor device
JPS57114242A (en) * 1981-01-07 1982-07-16 Hitachi Ltd Semiconductor device
JPS5982734A (ja) * 1982-11-04 1984-05-12 Hitachi Ltd 絶縁型半導体装置
JPS6010633A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
JPS6117355A (ja) * 1984-07-03 1986-01-25 Hitachi Ltd 異種部材のはんだ接合方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0659998A3 (en) * 1993-12-27 1996-05-15 Hitachi Ltd Ignition device for an internal combustion engine.
US6590774B2 (en) 1993-12-27 2003-07-08 Hitachi, Ltd. Ignition apparatus for internal combustion engine with improved electrical insulation plate including beryllia

Also Published As

Publication number Publication date
GB2233593B (en) 1993-11-10
GB9014392D0 (en) 1990-08-22
GB2233593A (en) 1991-01-16
DE4020577A1 (de) 1991-01-10
KR910001953A (ko) 1991-01-31
KR0183010B1 (ko) 1999-03-20
JP2609724B2 (ja) 1997-05-14
DE4020577C3 (de) 1998-11-12
DE4020577C2 (de) 1994-07-07

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