JPH03257940A - 半導体集積回路装置のワイヤボンディング装置 - Google Patents

半導体集積回路装置のワイヤボンディング装置

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Publication number
JPH03257940A
JPH03257940A JP2058397A JP5839790A JPH03257940A JP H03257940 A JPH03257940 A JP H03257940A JP 2058397 A JP2058397 A JP 2058397A JP 5839790 A JP5839790 A JP 5839790A JP H03257940 A JPH03257940 A JP H03257940A
Authority
JP
Japan
Prior art keywords
wire
integrated circuit
thin film
semiconductor integrated
insulating thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2058397A
Other languages
English (en)
Inventor
Masaaki Murakami
村上　雅映
Yasushi Araki
荒木　康司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2058397A priority Critical patent/JPH03257940A/ja
Publication of JPH03257940A publication Critical patent/JPH03257940A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
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    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （産業上の利用分野） この発明は半導体集積回路装置のワイヤボンディング装
置に関するものである。
〔従来の技術〕
第２図は、従来の半導体集積回路装置のワイヤボンディ
ング装置を示す断面図、第３図は第２図のワイヤボンデ
ィングによる半導体集積回路チップとリードとの接続状
態を示す断面図である。
図において、（１）は半導体集積回路チップ、（２）は
外部端子と接続するリード、（３）は半導体集積回路チ
ップ（１）上の端子とリード（２）とを接続するワイヤ
、（４〉はワイヤ（３）を各端子と接続するための装置
であるキャピラリ、（５）はパッケージである。
従来の半導体集積回路装置のワイヤボンディング装置は
キャピラリ（４）より金線等の導体材料により構成され
たワイヤ（３）を導出し、熱圧着等の手法により半導体
集積回路チップ（１）上の端子とリード（２）とを接続
する。次いて、高温の溶解したモールド樹脂を流し込み
冷却してモールド樹脂を凝固させることによりパッケー
ジングを行っていた。
〔発明が解決しようとする課題〕
従来の半導体集積回路装置のワイヤボンディング装置は
以上のように構成されていたので、パツケージングにお
ける溶解したモールド樹脂を流し込む際に、モールド樹
脂がワイヤを押して近接したワイヤが接触し、この時導
体により構成されたワイヤ配線がショートするなどの問
題点があった。
この発明は上記のような問題点を解消するためになされ
たものでパッケージングの際にモールド樹脂がワイヤを
押して近接したワイヤと接触しても、ショートを起こさ
ないワイヤボンディング装置を得ることを目的とする。
〔課題を解決するための手段〕
この発明に係る半導体集積回路装置のワイヤボンディン
グ装置は、ワイヤボンディングにおけるワイヤに絶縁薄
膜を塗布した導線を用い、その絶縁薄膜を場所選択的に
除去できる除去装置を備えたものである。
〔作用〕
この発明におけるワイヤの絶縁薄膜は、パッケージング
の際のワイヤの接触において、それぞれの配線を絶縁保
持する。
〔実施例〕
以下、この発明の一実施例を図について説明する。
第１図において、（１）は半導体集積回路チップ、（２
）は外部端子と接続するリード、（３）は半導体集積回
路チップ（１）上の端子とリード（２）とを接続するワ
イヤ、（４）はワイヤ（３〉を各端子と接続するための
装置であるキャピラリ、（５）はパッケージ、（６）は
キャピラリ（４）のワイヤ導出部に設けられた高温部、
（７）はワイヤ（３）の導線、（８）は導線（７）に塗
布された絶縁薄膜である。
次に動作について説明する。
ワイヤ（３）にはあらかじめ導線（７）に絶縁薄膜（１
８）を塗布したものを使用する。このワイヤ（３）を用
い、キャピラリ（４）の先端部に設けられた高温部（６
）は、半導体集積回路チップ（１）の端子及びリード（
２）とワイヤとの接続時には絶縁薄膜（８）を蒸発させ
、接続時以外は、高温部（６〉による絶縁薄膜の蒸発を
行わないようになっている。
以上のように絶縁薄膜（８）を塗布した導線（７）によ
り構成されたワイヤ（３）は、パッケージングの際に融
解したモールド樹脂を流し込むときに押されるが、絶縁
薄膜（８）に強度があるとき、近接するワイヤ（３）と
接触しない。
また、絶縁薄膜（８）に強度がないとき、近接したワイ
ヤ（３）と接触するが、絶縁薄膜（８）により配線はシ
ョートしない。更に絶縁薄膜（８）が融解することがあ
っても、モールド樹脂の温度を適当に設定することによ
って、絶縁薄膜（８）の融解後ワイヤ（３）の接触に至
るまでに絶縁薄＠（８）の凝固によりショートしない。
（発明の効果） 以上のようにこの発明によれば、ワイヤボンティングに
用いるワイヤを絶縁薄膜を塗布した導線とし、キャピラ
リで端子との接続部におけるワイヤの絶縁薄膜を除去す
る除・表装置を設けたので、モールド樹脂による半導体
集積回路チップ封止時のワイヤの接触によるショートを
防止できる効果がある。
【図面の簡単な説明】
第１図はこの発明の一実施例である半導体集積回路装置
のワイヤボンディング装置を示す断面図、第２図は従来
の半導体集積回路装置のワイヤボンディング装置を示す
断面図、第３図は第２図のワイヤボンディングによる半
導体集積回路チップとリードとの接続状態を示す断面図
である。 図において、（１）は半導体集積回路チップ、（２）は
リート、（３）はワイヤ、（４）はキャピラリ、（５）
はパッケージ、（６）は高温部、（７）は導線、（８）
は絶縁薄膜を示す。 なお、図中、同一符号は同一　または相当部分をボす。

Claims (1)

    【特許請求の範囲】
  1. 　単一あるいは複数の半導体集積回路チップ、及び半導
    体集積回路チップ端子をパッケージの外部へ引き出すた
    めのリード端子を有し、前記半導体集積回路チップ端子
    と前記リード端子とを接続しこれらを単一パッケージ内
    に封止した半導体集積回路において、前記半導体集積回
    路チップ端子とリード端子を接続するワイヤにあらかじ
    め絶縁薄膜を設け、この絶縁薄膜を場所選択的に除去す
    る除去装置を備えたことを特徴とする半導体集積回路装
    置のワイヤボンディング装置。
JP2058397A 1990-03-08 1990-03-08 半導体集積回路装置のワイヤボンディング装置 Pending JPH03257940A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2058397A JPH03257940A (ja) 1990-03-08 1990-03-08 半導体集積回路装置のワイヤボンディング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2058397A JPH03257940A (ja) 1990-03-08 1990-03-08 半導体集積回路装置のワイヤボンディング装置

Publications (1)

Publication Number Publication Date
JPH03257940A true JPH03257940A (ja) 1991-11-18

Family

ID=13083221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2058397A Pending JPH03257940A (ja) 1990-03-08 1990-03-08 半導体集積回路装置のワイヤボンディング装置

Country Status (1)

Country Link
JP (1) JPH03257940A (ja)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61101043A (ja) * 1984-10-24 1986-05-19 Hitachi Ltd ワイヤボンデイング装置
JPS6216537A (ja) * 1985-07-15 1987-01-24 Toshiba Corp ワイヤボンデイング用ボ−ル形成装置
JPH02146742A (ja) * 1988-11-28 1990-06-05 Hitachi Ltd ワイヤボンディング方法および装置
JPH02213146A (ja) * 1989-02-13 1990-08-24 Hitachi Ltd ワイヤボンディング方法および装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61101043A (ja) * 1984-10-24 1986-05-19 Hitachi Ltd ワイヤボンデイング装置
JPS6216537A (ja) * 1985-07-15 1987-01-24 Toshiba Corp ワイヤボンデイング用ボ−ル形成装置
JPH02146742A (ja) * 1988-11-28 1990-06-05 Hitachi Ltd ワイヤボンディング方法および装置
JPH02213146A (ja) * 1989-02-13 1990-08-24 Hitachi Ltd ワイヤボンディング方法および装置

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