JPH0324056B2 - - Google Patents
Info
- Publication number
- JPH0324056B2 JPH0324056B2 JP55010359A JP1035980A JPH0324056B2 JP H0324056 B2 JPH0324056 B2 JP H0324056B2 JP 55010359 A JP55010359 A JP 55010359A JP 1035980 A JP1035980 A JP 1035980A JP H0324056 B2 JPH0324056 B2 JP H0324056B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- polycrystalline silicon
- diffusion layer
- polysilicon
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10W20/069—
-
- H10W72/536—
-
- H10W72/59—
-
- H10W72/934—
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1035980A JPS56108243A (en) | 1980-01-31 | 1980-01-31 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1035980A JPS56108243A (en) | 1980-01-31 | 1980-01-31 | Semiconductor integrated circuit device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62007658A Division JPS63162A (ja) | 1987-01-16 | 1987-01-16 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56108243A JPS56108243A (en) | 1981-08-27 |
| JPH0324056B2 true JPH0324056B2 (enExample) | 1991-04-02 |
Family
ID=11747965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1035980A Granted JPS56108243A (en) | 1980-01-31 | 1980-01-31 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56108243A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60160634A (ja) * | 1984-01-31 | 1985-08-22 | Fujitsu Ltd | 半導体装置 |
| JPS61159750A (ja) * | 1984-12-31 | 1986-07-19 | Sony Corp | 半導体装置及びその製造方法 |
| JPS61273931A (ja) * | 1985-05-10 | 1986-12-04 | Mitsubishi Monsanto Chem Co | 積層2軸延伸フイルムの製造方法 |
| JPS63268258A (ja) * | 1987-04-24 | 1988-11-04 | Nec Corp | 半導体装置 |
-
1980
- 1980-01-31 JP JP1035980A patent/JPS56108243A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56108243A (en) | 1981-08-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4176342B2 (ja) | 半導体装置およびそのレイアウト方法 | |
| US4688323A (en) | Method for fabricating vertical MOSFETs | |
| US4377819A (en) | Semiconductor device | |
| US4720737A (en) | Semiconductor device having a protection circuit with lateral bipolar transistor | |
| JPH0463546B2 (enExample) | ||
| JP3590207B2 (ja) | Mosキャパシタ | |
| JPH0324056B2 (enExample) | ||
| JP2755619B2 (ja) | 絶縁ゲート型半導体装置 | |
| US5348907A (en) | Method of fabricating of semiconductor device by forming two electrically insulated wells of the same type electroconductivity on semiconductor substrate | |
| US5327000A (en) | Semiconductor device interconnected to analog IC driven by high voltage | |
| JPH02246264A (ja) | 半導体装置およびその製造方法 | |
| JPH0376788B2 (enExample) | ||
| US4702796A (en) | Method for fabricting a semiconductor device | |
| JP2702909B2 (ja) | 半導体集積回路装置 | |
| JPS60136374A (ja) | 半導体装置 | |
| JPS6237547B2 (enExample) | ||
| EP0281032B1 (en) | Semiconductor device comprising a field effect transistor | |
| JPH0346980B2 (enExample) | ||
| JPH10154792A (ja) | 半導体集積回路とその製造方法 | |
| JPS60113967A (ja) | 半導体装置の製造方法 | |
| JPS61120459A (ja) | 半導体集積回路装置の製造方法 | |
| JPS61194764A (ja) | 半導体装置の製造方法 | |
| EP0317133B1 (en) | Semiconductor device for controlling supply voltage fluctuations | |
| JPH1174388A (ja) | 半導体装置及びその製造方法 | |
| JPS63182859A (ja) | 半導体集積回路装置 |