JPH0322690B2 - - Google Patents

Info

Publication number
JPH0322690B2
JPH0322690B2 JP57223058A JP22305882A JPH0322690B2 JP H0322690 B2 JPH0322690 B2 JP H0322690B2 JP 57223058 A JP57223058 A JP 57223058A JP 22305882 A JP22305882 A JP 22305882A JP H0322690 B2 JPH0322690 B2 JP H0322690B2
Authority
JP
Japan
Prior art keywords
insulating film
resist
photoresist
semiconductor
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57223058A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59114824A (ja
Inventor
Katsunori Mihashi
Ryohei Kawabata
Hiroaki Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP22305882A priority Critical patent/JPS59114824A/ja
Publication of JPS59114824A publication Critical patent/JPS59114824A/ja
Publication of JPH0322690B2 publication Critical patent/JPH0322690B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
JP22305882A 1982-12-21 1982-12-21 半導体装置の平坦化方法 Granted JPS59114824A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22305882A JPS59114824A (ja) 1982-12-21 1982-12-21 半導体装置の平坦化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22305882A JPS59114824A (ja) 1982-12-21 1982-12-21 半導体装置の平坦化方法

Publications (2)

Publication Number Publication Date
JPS59114824A JPS59114824A (ja) 1984-07-03
JPH0322690B2 true JPH0322690B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-03-27

Family

ID=16792169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22305882A Granted JPS59114824A (ja) 1982-12-21 1982-12-21 半導体装置の平坦化方法

Country Status (1)

Country Link
JP (1) JPS59114824A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6170720A (ja) * 1984-09-14 1986-04-11 Hitachi Ltd パタ−ン形成方法
JPH0727216B2 (ja) * 1985-02-06 1995-03-29 株式会社日立製作所 パタ−ン形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143035A (en) * 1979-04-24 1980-11-08 Nec Corp Manufacture of pattern
JPS6033307B2 (ja) * 1979-07-23 1985-08-02 富士通株式会社 半導体装置の製造方法
JPS57149733A (en) * 1981-03-11 1982-09-16 Hitachi Ltd Dry etching method

Also Published As

Publication number Publication date
JPS59114824A (ja) 1984-07-03

Similar Documents

Publication Publication Date Title
JPS6245043A (ja) 半導体構造における溝の充填方法
JPH07120650B2 (ja) スピンオンしたゲルマニウムガラス
US4499119A (en) Method of manufacturing super-conductive tunnel junction devices with precise junction area control
JPH0434296B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0322690B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US6448183B1 (en) Method of forming contact portion of semiconductor element
JPH0669351A (ja) 多層金属配線構造のコンタクトの製造方法
KR100200297B1 (ko) 반도체 소자의 콘택홀 형성방법
JPS6362255A (ja) 半導体装置の平坦化方法
JPS59114823A (ja) 半導体装置の平坦化方法
KR0147648B1 (ko) 반도체 장치의 층간절연층 평탄화방법
KR0171316B1 (ko) 반도체 소자의 층간 절연막의 평탄화 방법
JPS627699B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0226053A (ja) 半導体装置の製造方法
JP3021711B2 (ja) 半導体集積回路の製造方法
JPH10214892A (ja) 半導体装置の製造方法
KR100190191B1 (ko) 반도체 소자의 저장전극 형성방법
JP3041929B2 (ja) 平坦化方法
JPH0677182A (ja) 凹凸のある絶縁膜の平坦化方法
KR960008559B1 (ko) 반도체 소자의 미세 콘택홀 형성방법
JPH0231448A (ja) 半導体装置の製造方法
JPH1187310A (ja) 緩やかな傾斜を有する酸化膜パターン形成のための半導体素子の製造方法
JPS62216268A (ja) 半導体装置の製造方法
KR0155864B1 (ko) 반도체 장치의 배선 방법
JPH03254123A (ja) 選択エッチング方法