JPH03212958A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPH03212958A
JPH03212958A JP2009163A JP916390A JPH03212958A JP H03212958 A JPH03212958 A JP H03212958A JP 2009163 A JP2009163 A JP 2009163A JP 916390 A JP916390 A JP 916390A JP H03212958 A JPH03212958 A JP H03212958A
Authority
JP
Japan
Prior art keywords
film
insulating film
wiring
bpsg
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009163A
Other languages
English (en)
Japanese (ja)
Inventor
Akemichi Yonekura
米倉　明道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2009163A priority Critical patent/JPH03212958A/ja
Priority to PCT/JP1991/000040 priority patent/WO1991011023A1/ja
Priority to DE19914190089 priority patent/DE4190089T1/de
Publication of JPH03212958A publication Critical patent/JPH03212958A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2009163A 1990-01-18 1990-01-18 半導体装置の製造方法 Pending JPH03212958A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009163A JPH03212958A (ja) 1990-01-18 1990-01-18 半導体装置の製造方法
PCT/JP1991/000040 WO1991011023A1 (fr) 1990-01-18 1991-01-17 Procede de production de dispositifs semi-conducteurs
DE19914190089 DE4190089T1 (https=) 1990-01-18 1991-01-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009163A JPH03212958A (ja) 1990-01-18 1990-01-18 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JPH03212958A true JPH03212958A (ja) 1991-09-18

Family

ID=11712948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009163A Pending JPH03212958A (ja) 1990-01-18 1990-01-18 半導体装置の製造方法

Country Status (3)

Country Link
JP (1) JPH03212958A (https=)
DE (1) DE4190089T1 (https=)
WO (1) WO1991011023A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5488007A (en) * 1992-04-16 1996-01-30 Samsung Electronics Co., Ltd. Method of manufacture of a semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6388829A (ja) * 1986-10-01 1988-04-19 Matsushita Electric Ind Co Ltd 気相成長方法
JPS63192239A (ja) * 1987-02-05 1988-08-09 Fujitsu Ltd 半導体装置の製造方法
JPS6476727A (en) * 1987-09-17 1989-03-22 Nec Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5488007A (en) * 1992-04-16 1996-01-30 Samsung Electronics Co., Ltd. Method of manufacture of a semiconductor device

Also Published As

Publication number Publication date
WO1991011023A1 (fr) 1991-07-25
DE4190089T1 (https=) 1992-01-30

Similar Documents

Publication Publication Date Title
JPH08181210A (ja) 半導体装置の製造方法
JPH05243402A (ja) 半導体装置の製造方法
JPH01185947A (ja) 半導体装置製造方法
JPH03212958A (ja) 半導体装置の製造方法
JPH01185945A (ja) 半導体装置の製造方法
KR930006128B1 (ko) 반도체장치의 금속 배선 형성방법
JPH0653189A (ja) 成膜層の平坦化方法
JPS5893328A (ja) 絶縁層の平担化方法
KR20050000871A (ko) 고밀도 플라즈마 갭필 향상 방법
JPS63192239A (ja) 半導体装置の製造方法
JP3196847B2 (ja) 配線構造及びその製造方法
JP2003218116A (ja) 半導体装置及びその製造方法
JPH0766178A (ja) 半導体装置の製造方法
JP2663833B2 (ja) 半導体装置およびその製造方法
JPH04142065A (ja) 半導体装置の製造方法
JPH0590425A (ja) 多層配線形成法
JPH0425159A (ja) 電極配線の形成方法
JPH06244180A (ja) 半導体装置およびその製造方法
JPH0273652A (ja) 半導体装置の製造方法
JPH0214525A (ja) 半導体集積回路の製造方法
JPS59115541A (ja) 半導体装置の製造方法
JPH05304219A (ja) 半導体装置における絶縁層の形成方法
JPH0379031A (ja) 半導体装置
JPH05259296A (ja) 半導体装置およびその製造方法
JPH0499358A (ja) 半導体装置およびその製造方法