JPH0319259A - Semiconductor device - Google Patents

Abstract

PURPOSE:To improve reliability and easily control the dripping quantity of a resin solution by providing a 20-40mum thick pattern containing a region for forming a resin film. CONSTITUTION:A side wall of 20-40mum in thickness forms a goldplated pattern 3 by using gold-plating, so as to surround a region for forming a resin film 4 on a semiconductor chip 1. Resin solution is dropped on the region for forming the resin film 4 in the pattern 3, thereby completely covering the inside of the pattern 3. Since the pattern 3 serves as a bank, the resin solution covers only the pattern 3 and does not stretch outside. Next a resin film 4 is formed by heat treatment. Hence the region for forming the resin film 4 is completely covered, so that the reliability is improved and the control of the dripping quantity of resin solution is facilitated.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to measures against fatigue caused by alpha rays in semiconductor devices, and relates to the structure of a region on the surface of a semiconductor device where a resin film is to be formed.

[Conventional technology]

Examples of conventional semiconductor devices of this type are shown in FIGS. 5 and 6. FIG. 5 is a plan view of the conventional embodiment, and FIG. 6 is a sectional view taken along line CC' in FIG. Alternatively, a semiconductor chip configured with a semiconductor integrated circuit 1 power supply and signal input/output pad 2,
These are the resin film 4 formed on the semiconductor chip l as a countermeasure against soft errors caused by α rays, and the region 8 where the resin film on the semiconductor device is to be formed.

Next, a conventional embodiment will be explained using FIGS. 5 and 6.

In a semiconductor device, a resin solution such as polyimide is dropped at one point or multiple points on an area 8 where a resin film such as a memory area should be protected, as a measure against erectile dysfunction caused by alpha rays.
Add heat treatment at 200-300℃ to a thickness of 30-300μ
A resin film 4 of m is formed.

Here, when the resin solution is dropped, the resin film 4 spreads onto the input/output pad 2 for the power supply and wiring due to a defect in the dropping method or the amount dropped. Alternatively, problems such as not completely covering the region 8 where the resin film should be applied may occur.

[Problem to be solved by the invention]

In the conventional semiconductor device described above, when a resin film is formed on the semiconductor surface as a countermeasure against alpha-ray radiation, due to a problem with the method or amount of dropping of the resin solution, the resin film may end up on the power supply and signal input/output pads. It will spread. Alternatively, problems such as not completely covering the region where the resin film is to be formed occur, resulting in a disadvantage that the reliability of the semiconductor device is reduced.

[Means to solve the problem]

The semiconductor device of the present invention has a pattern with a thickness of 20 to 40 μm surrounding a region where a resin film is to be formed, and the resin film is formed within the pattern.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

Figure 1 is a plan view of Embodiment 1 of the present invention, and Figure 2 is Figure 1A.
-A' cross-sectional view. A semiconductor chip 1 in which a structure or a semiconductor integrated circuit is formed, a power supply and signal input/output pad 2, a pattern 3 surrounding the area where a resin film is to be formed, and a pattern 3 formed on the semiconductor chip 1 as a countermeasure against soft errors caused by alpha rays. This is the resin film 4. Next, Embodiment 1 of the present invention will be explained using FIGS. 1 and 2. Electrolytic gold plating is used to surround areas where a resin film is to be formed, such as a memory area, on the semiconductor chip 1 on which a semiconductor integrated circuit is formed, to a thickness of 20 to 40 μm and a width of 50 to 100 μm.
A gold plating pattern 3 with vertical side walls of about μm is formed. The pattern 3 may be formed at the same time as forming the top layer wiring, or may be used in common with the power supply wiring, etc.

Next, a resin solution such as polyimide is dropped at one point or multiple points on the region in the pattern 3 where a resin film is to be formed. At this time, an amount sufficient to completely cover the inside of the pattern 3 is dropped, but the pattern 3 becomes an embankment and the resin solution does not spread outside the pattern 3.

Next, a heat treatment is applied at about 200 to 300°C to form a resin film 4. The thickness of the resin film 4 is approximately 30 to 300 μm. In Example 1, electrolytic gold plating was selectively performed using a Nopola resin-based ultra-thick film resist that yields a well-shaped pattern with a thickness of 20 μm or more. Although attention is focused on obtaining a 40 μm gold plating pattern, pattern 3 may of course be formed using a method and material other than gold plating.

[Embodiment 2] FIG. 3 is a plan view of Embodiment 2 of the present invention, and FIG. 4 is a sectional view taken along the line BB' in FIG. The structure consists of a chip on which a semiconductor integrated circuit is formed, a power supply and signal input/output pad 2, a first
wiring pattern 5 of the power supply, wiring pattern 6 of the second power supply
, a wiring pattern 7 for the third power supply, and a resin film 4 formed to prevent soft errors caused by alpha rays.

Next, a second embodiment of the present invention will be described using FIGS. 3 and 4.

The uppermost layer wiring of the semiconductor chip l on which the semiconductor integrated circuit is formed is formed to a thickness of about 20 to 40 μm using gold plating or the like. At this time, the wiring pattern 5 for the first power supply, the wiring pattern 6 for the second power supply, and the wiring pattern 7 for the third power supply are respectively arranged so as to surround the area where the resin film is to be formed. Next, a resin solution such as polyimide is dropped at one point or multiple points on the area where the resin film is to be formed. At this time, enough resin solution is dropped to completely cover the area where the resin film is to be formed. 7 becomes a double-structured embankment, and the resin solution does not spread outside the power supply wiring pattern.

Next, heat treatment is applied at about 200 to 300℃, and the thickness is 30 to 30℃.
A resin film of about 300 μm is formed.

In this way, by surrounding the area where the resin film is to be formed with two or more patterns, it becomes easier to control the dropping method and amount of the resin solution than in Example 1, and the reliability of the semiconductor device is further improved.

[Effects of the Invention] As explained above, the present invention has a pattern surrounding the area where the resin film is to be formed, and the pattern is used as an embankment.
By forming the resin film only within the pattern, it is possible to suppress the spread of the resin film and completely cover the region where the resin film is to be formed, thereby improving the reliability of the semiconductor device. Furthermore, it becomes easier to control the method and amount of dropping the resin solution.

[Brief explanation of the drawing]

Figure 1 is a plan view of Embodiment 1 of the present invention, and Figure 2 is Figure 1A.
-A' sectional view. FIG. 3 is a plan view of a second embodiment of the present invention, and FIG. 4 is a sectional view taken along line BB' in FIG. FIG. 5 is a plan view of the conventional embodiment, and FIG. 6 is a sectional view taken along line CC' in FIG. 1... Semiconductor chip, 2... Power supply and signal input/output pad, 3... Pattern surrounding the area where the resin film is to be formed, 4... Resin film, 5...
... Wiring pattern of first power supply, 6 ... Wiring pattern of second power supply, 7 ... Wiring pattern of third power supply, 8 ... Resin Area where a film should be formed.

Claims (1)

[Claims] In a semiconductor device having a resin film on the surface, a thickness of 20 to 40 μm surrounding the area where the resin film is to be formed on the semiconductor device.
What is claimed is: 1. A semiconductor device having a pattern, and a resin film formed within the pattern.