JPS58111351A - Radiation shielding type semiconductor device - Google Patents

Radiation shielding type semiconductor device

Info

Publication number
JPS58111351A
JPS58111351A JP56209229A JP20922981A JPS58111351A JP S58111351 A JPS58111351 A JP S58111351A JP 56209229 A JP56209229 A JP 56209229A JP 20922981 A JP20922981 A JP 20922981A JP S58111351 A JPS58111351 A JP S58111351A
Authority
JP
Japan
Prior art keywords
frame
shielding material
radiation shielding
semiconductor device
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56209229A
Other languages
Japanese (ja)
Inventor
Keizo Matsukawa
松川　敬三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56209229A priority Critical patent/JPS58111351A/en
Publication of JPS58111351A publication Critical patent/JPS58111351A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05553—Shape in top view being rectangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To form a radiation shielding film with sufficient film thickness only to a necessary section by forming a frame consisting of a radiation shielding material around a circuit and dropping the shielding material into the frame and solidifying the material. CONSTITUTION:The radiation shielding material in polyimide resin, etc. is applied uniformly onto the surface of a wafer 1, to which the necessary circuit is shaped, through rotary application, etc., a thin film is formed through heat treatment, and the frame 2 is formed around the circuit requiring the shielding of the semiconductor device (wafer) 1 through photoetching, etc. A wiring section 3 is removed from the frame 2. The semiconductor device 1 is assembled and wired, and the radiation shielding material 4 is dropped into the frame 2 and thermally treated. Accordingly, the thick hilm consisting of the shielding material is formed into the frame 2, and the quality of shielding material with sufficient film thickness is obtained only at a position requiring radiation shielding. Wiring 5 can be executed excellently because the shileding material 4 does not adhere on the wiring section 3.

Description

【発明の詳細な説明】 本発明は、放射線の影響で誤動作を生じる半導体装置に
おいて放射線の影響を防止する構造に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a structure for preventing the effects of radiation in a semiconductor device that malfunctions due to the effects of radiation.

従来、半導体装置への放射線の影響を防止するために放
射線遮蔽材を利用しているが、この遮蔽材の形成に際し
ては次のような方法が行なわれている。Conventionally, radiation shielding materials have been used to prevent the influence of radiation on semiconductor devices, and the following method has been used to form this shielding material.

（１）液状の遮蔽材を組立て後の半導体装置上に滴下し
たのち熱処理で皮膜を形成する。(1) After dropping a liquid shielding material onto an assembled semiconductor device, a film is formed by heat treatment.

（２１ワエへ時に液状遮蔽材を回転塗布し、熱処理で均
一な皮膜を形成したのち、フォトエツチング等により配
線部の皮膜を除去する。(At times, the liquid shielding material is applied by rotation to the wafer 21, and after a uniform film is formed by heat treatment, the film on the wiring portion is removed by photo-etching or the like.

しかしながら前記した（１）の方法では、遮蔽材が半導
体装置全面に広がるため、これが周辺に設けた配線部に
までおよび、配線部を榎った遮蔽材の影響で信頼性が低
下する場合がめる、また前記（２１の方法では、同転塗
布等により均一な膜厚を得なければならないため、厚膜
の形成が困難であり、充分な対放射線強度が得られない
等の不具合がある。However, in method (1) described above, since the shielding material spreads over the entire surface of the semiconductor device, the shielding material spreads over the entire surface of the semiconductor device, so that the shielding material that covers the wiring section may reduce reliability. Furthermore, in the method (21), since a uniform film thickness must be obtained by simultaneous coating, it is difficult to form a thick film, and there are problems such as insufficient radiation resistance.

したがって、本発明の目的は上述のような諸方法の欠点
を解決した新規な放射線遮蔽構造を提供するものであり
、放射線遮蔽材より成る枠を遮蔽が必要な回路の周辺に
のみ形成し、その後に上記枠内に遮蔽材を滴下、固化さ
せることにより、必要部分のみに充分な膜厚の放射線遮
蔽膜を形成することができるものである。Therefore, an object of the present invention is to provide a novel radiation shielding structure that solves the drawbacks of the various methods described above, in which a frame made of radiation shielding material is formed only around the circuit that needs to be shielded, and then By dropping the shielding material into the frame and solidifying it, a radiation shielding film having a sufficient thickness can be formed only in the necessary areas.

以下、本発明を図示の実施例により説明する。Hereinafter, the present invention will be explained with reference to illustrated embodiments.

第１図、第２図は本発明の一実施例を示すもので、所要
の回路を形成したダイシング前のクエ／Ｓｌの表面にポ
リイミド樹脂等の放射線遮蔽材を回転塗布等で均一に塗
布し、熱処理して薄膜を形、成し、その後半導体装置（
ウニ・・）ｌの遮蔽を必要とする回路の周辺に図１囚、
（ロ）に示すような枠２をフォトエツチング等により形
成する。この枠２は配線部３を除いている。そして上記
半導体装置ｌを組立て配線後、上記の枠２の内側に放射
線遮蔽材４を滴下、熱処理すると図２囚、但）に示すよ
うに枠内２内に遮蔽材からなる厚膜が形成され、放射線
遮蔽が必要な箇所にのみ充分な膜厚の遮蔽材質が得られ
る。このとき、配線部３に遮蔽材４は付着せず、したが
って配線５を良好に行なうことができる。Figures 1 and 2 show an embodiment of the present invention, in which a radiation shielding material such as polyimide resin is uniformly applied by spin coating etc. to the surface of Que/Sl on which the required circuit has been formed before dicing. , heat-treated to form and form a thin film, and then semiconductor devices (
Sea urchin...) Figure 1 is placed around circuits that require shielding.
A frame 2 as shown in (b) is formed by photoetching or the like. This frame 2 excludes the wiring section 3. After assembling and wiring the semiconductor device 1, a radiation shielding material 4 is dropped inside the frame 2 and heat-treated, so that a thick film made of the shielding material is formed within the frame 2 as shown in FIG. , a shielding material with a sufficient thickness can be obtained only in areas where radiation shielding is required. At this time, the shielding material 4 does not adhere to the wiring portion 3, so that the wiring 5 can be performed satisfactorily.

したがって、本発明の構造によれば半導体装置における
放射線の遮蔽が必要な箇所にのみ遮蔽材の厚膜を形成し
ているので、放射線の影響による半導体装置の誤動作を
防止するとともに、配線部等での遮蔽材の影響による信
頼性の低下を防止することができる。Therefore, according to the structure of the present invention, a thick film of the shielding material is formed only in the parts of the semiconductor device where radiation shielding is necessary, so that malfunction of the semiconductor device due to the influence of radiation is prevented, and it is also possible to prevent the semiconductor device from malfunctioning due to the influence of radiation. It is possible to prevent a decrease in reliability due to the influence of the shielding material.

【図面の簡単な説明】 第１ｆｔ！０（Ａ１．（Ｂ）はそれぞれ遮蔽材の枠を形
成した半導体装置の断面図及び斜視図、第２図囚、β）
はそれぞれ上記枠内に遮蔽材厚膜を形成した半導体装置
の断面図及び斜視図である、 ｌ・・・半導体装置、２・・・放射線遮蔽材（枠）、３
・・・ボンディングバット（配線部）、４・・・放射線
遮蔽材（厚膜）、５・・・配線。 代理人　弁理士　　薄　１）利　幸＋、；、、７．）・
　−、Ｊ　／、。 第 （Ａ＞ ／ 第　　２ （Ａ＞ （Ｂ）[Brief explanation of the drawing] 1st ft! 0 (A1. (B) is a cross-sectional view and a perspective view of a semiconductor device in which a frame of a shielding material is formed, respectively, Figure 2, β)
are a cross-sectional view and a perspective view of a semiconductor device in which a thick film of shielding material is formed in the frame, respectively; l...Semiconductor device, 2...Radiation shielding material (frame), 3.
... Bonding bat (wiring part), 4... Radiation shielding material (thick film), 5... Wiring. Agent Patent Attorney Susuki 1) Yuki Toshi +;,,7. )・
-, J/,. No. (A> / No. 2 (A> (B))

Claims (1)

【特許請求の範囲】[Claims] １、放射線の影響を受ける回路を有する半導体装置の回
路部位の周囲に放射線遮蔽材より成る枠を設けると共に
、その枠内に放射線遮蔽材を滴下して遮蔽厚膜を形成せ
しめて上記回路のみを放射線より遮蔽したことを特徴と
する放射線遮蔽製半導体装置。1. A frame made of a radiation shielding material is provided around the circuit part of a semiconductor device that has a circuit that is affected by radiation, and the radiation shielding material is dropped into the frame to form a thick shielding film to protect only the above circuit. A radiation-shielded semiconductor device characterized by being shielded from radiation.
JP56209229A 1981-12-25 1981-12-25 Radiation shielding type semiconductor device Pending JPS58111351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56209229A JPS58111351A (en) 1981-12-25 1981-12-25 Radiation shielding type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56209229A JPS58111351A (en) 1981-12-25 1981-12-25 Radiation shielding type semiconductor device

Publications (1)

Publication Number Publication Date
JPS58111351A true JPS58111351A (en) 1983-07-02

Family

ID=16569484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56209229A Pending JPS58111351A (en) 1981-12-25 1981-12-25 Radiation shielding type semiconductor device

Country Status (1)

Country Link
JP (1) JPS58111351A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4712129A (en) * 1983-12-12 1987-12-08 Texas Instruments Incorporated Integrated circuit device with textured bar cover
JPH02271547A (en) * 1989-04-12 1990-11-06 Nec Corp Film carrier-type semiconductor device
JPH0319259A (en) * 1989-06-15 1991-01-28 Nec Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4712129A (en) * 1983-12-12 1987-12-08 Texas Instruments Incorporated Integrated circuit device with textured bar cover
JPH02271547A (en) * 1989-04-12 1990-11-06 Nec Corp Film carrier-type semiconductor device
JPH0319259A (en) * 1989-06-15 1991-01-28 Nec Corp Semiconductor device

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