JPH031837B2 - - Google Patents

Info

Publication number
JPH031837B2
JPH031837B2 JP56099802A JP9980281A JPH031837B2 JP H031837 B2 JPH031837 B2 JP H031837B2 JP 56099802 A JP56099802 A JP 56099802A JP 9980281 A JP9980281 A JP 9980281A JP H031837 B2 JPH031837 B2 JP H031837B2
Authority
JP
Japan
Prior art keywords
region
memory cell
layer
cell structure
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56099802A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5773968A (en
Inventor
Kaabaa Haadeii Kimu
Sudo Raauru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SOON II EMU AI NOOSU AMERIKA Inc
Original Assignee
SOON II EMU AI NOOSU AMERIKA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SOON II EMU AI NOOSU AMERIKA Inc filed Critical SOON II EMU AI NOOSU AMERIKA Inc
Publication of JPS5773968A publication Critical patent/JPS5773968A/ja
Publication of JPH031837B2 publication Critical patent/JPH031837B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56099802A 1980-06-30 1981-06-29 Memory cell structure and method of producing same Granted JPS5773968A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/164,285 US4471374A (en) 1980-06-30 1980-06-30 Single polycrystalline silicon memory cell

Publications (2)

Publication Number Publication Date
JPS5773968A JPS5773968A (en) 1982-05-08
JPH031837B2 true JPH031837B2 (en, 2012) 1991-01-11

Family

ID=22593804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56099802A Granted JPS5773968A (en) 1980-06-30 1981-06-29 Memory cell structure and method of producing same

Country Status (5)

Country Link
US (1) US4471374A (en, 2012)
EP (1) EP0043244B1 (en, 2012)
JP (1) JPS5773968A (en, 2012)
CA (1) CA1149950A (en, 2012)
DE (2) DE3175339D1 (en, 2012)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3380548D1 (en) * 1982-03-03 1989-10-12 Fujitsu Ltd A semiconductor memory device
US4554644A (en) * 1982-06-21 1985-11-19 Fairchild Camera & Instrument Corporation Static RAM cell
JPS59155165A (ja) * 1983-02-23 1984-09-04 Toshiba Corp 半導体記憶装置
JPS604253A (ja) * 1983-06-23 1985-01-10 Nec Corp 半導体集積回路メモリ
DE3330026A1 (de) * 1983-08-19 1985-02-28 Siemens AG, 1000 Berlin und 8000 München Integrierte rs-flipflop-schaltung
DE3330013A1 (de) * 1983-08-19 1985-02-28 Siemens AG, 1000 Berlin und 8000 München Statische speicherzelle
US4847732A (en) * 1983-09-15 1989-07-11 Mosaic Systems, Inc. Wafer and method of making same
JP2673424B2 (ja) * 1984-02-21 1997-11-05 エンバィアロンメンタル・リサーチ・インスティテュート・オブ・ミシガン 集積回路用サブストレート
US5202751A (en) * 1984-03-30 1993-04-13 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
JPS60206161A (ja) * 1984-03-30 1985-10-17 Toshiba Corp 半導体集積回路
JPH0652782B2 (ja) * 1984-08-31 1994-07-06 株式会社日立製作所 半導体集積回路装置
KR940002772B1 (ko) * 1984-08-31 1994-04-02 가부시기가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치 및 그 제조방법
EP0231271A1 (en) * 1985-07-29 1987-08-12 AT&T Corp. Three-level interconnection scheme for integrated circuits
JPH0746702B2 (ja) * 1986-08-01 1995-05-17 株式会社日立製作所 半導体記憶装置
GB8700347D0 (en) * 1987-01-08 1987-02-11 Inmos Ltd Memory cell
US4920388A (en) * 1987-02-17 1990-04-24 Siliconix Incorporated Power transistor with integrated gate resistor
JPH061822B2 (ja) * 1989-05-24 1994-01-05 株式会社日立製作所 半導体集積回路装置の製法
US5838044A (en) 1995-12-12 1998-11-17 Advanced Micro Devices Integrated circuit having improved polysilicon resistor structures

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110776A (en) * 1976-09-27 1978-08-29 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
US4208781A (en) * 1976-09-27 1980-06-24 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
US4125854A (en) * 1976-12-02 1978-11-14 Mostek Corporation Symmetrical cell layout for static RAM
US4240097A (en) * 1977-05-31 1980-12-16 Texas Instruments Incorporated Field-effect transistor structure in multilevel polycrystalline silicon
JPS5828744B2 (ja) * 1977-05-31 1983-06-17 テキサス インスツルメンツ インコ−ポレイテツド シリコンゲ−ト型集積回路デバイスおよびその製造方法
US4246593A (en) * 1979-01-02 1981-01-20 Texas Instruments Incorporated High density static memory cell with polysilicon resistors
US4280271A (en) * 1979-10-11 1981-07-28 Texas Instruments Incorporated Three level interconnect process for manufacture of integrated circuit devices
US4322824A (en) * 1979-11-13 1982-03-30 Texas Instruments Incorporated Static random access memory with merged bit lines

Also Published As

Publication number Publication date
EP0043244A3 (en) 1983-07-20
JPS5773968A (en) 1982-05-08
DE3175339D1 (en) 1986-10-23
DE43244T1 (de) 1986-02-27
EP0043244A2 (en) 1982-01-06
EP0043244B1 (en) 1986-09-17
CA1149950A (en) 1983-07-12
US4471374A (en) 1984-09-11

Similar Documents

Publication Publication Date Title
US4890144A (en) Integrated circuit trench cell
US4178674A (en) Process for forming a contact region between layers of polysilicon with an integral polysilicon resistor
US4481524A (en) Semiconductor memory device having stacked polycrystalline silicon layers
JP2950558B2 (ja) 半導体装置
US5814895A (en) Static random access memory having transistor elements formed on side walls of a trench in a semiconductor substrate
KR100404829B1 (ko) 다중의 단일화된 플러그에서 개선된 정렬 톨러런스를 위한방법 및 구조
JP3957013B2 (ja) スタティックランダムアクセスメモリ装置
KR920010846B1 (ko) 반도체 장치의 그의 제조방법
JPH031837B2 (en, 2012)
US5573969A (en) Method for fabrication of CMOS devices having minimized drain contact area
US5877059A (en) Method for forming an integrated circuit resistor comprising amorphous silicon
JPS6321351B2 (en, 2012)
US4748492A (en) Read only memory
US4780751A (en) Semiconductor integrated circuit device
KR20020062590A (ko) 반도체메모리장치 및 그 제조방법
US5107322A (en) Wiring or conductor interconnect for a semiconductor device or the like
US5369046A (en) Method for forming a gate array base cell
US4570175A (en) Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations
US4910576A (en) Memory cell
US5323045A (en) Semiconductor SRAM with low resistance power line
US4486944A (en) Method of making single poly memory cell
US5981328A (en) Method of forming a high load resistance type static random access memory cell
JPH09266259A (ja) 半導体記憶装置とその製造方法
US6417545B1 (en) Semiconductor device
US6914300B2 (en) Semiconductor device