JPH0314234B2 - - Google Patents

Info

Publication number
JPH0314234B2
JPH0314234B2 JP58168695A JP16869583A JPH0314234B2 JP H0314234 B2 JPH0314234 B2 JP H0314234B2 JP 58168695 A JP58168695 A JP 58168695A JP 16869583 A JP16869583 A JP 16869583A JP H0314234 B2 JPH0314234 B2 JP H0314234B2
Authority
JP
Japan
Prior art keywords
gnd
power supply
transistor
drain
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58168695A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6059770A (ja
Inventor
Motoaki Murayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58168695A priority Critical patent/JPS6059770A/ja
Publication of JPS6059770A publication Critical patent/JPS6059770A/ja
Publication of JPH0314234B2 publication Critical patent/JPH0314234B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58168695A 1983-09-13 1983-09-13 半導体装置 Granted JPS6059770A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58168695A JPS6059770A (ja) 1983-09-13 1983-09-13 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58168695A JPS6059770A (ja) 1983-09-13 1983-09-13 半導体装置

Publications (2)

Publication Number Publication Date
JPS6059770A JPS6059770A (ja) 1985-04-06
JPH0314234B2 true JPH0314234B2 (cs) 1991-02-26

Family

ID=15872745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58168695A Granted JPS6059770A (ja) 1983-09-13 1983-09-13 半導体装置

Country Status (1)

Country Link
JP (1) JPS6059770A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9215654D0 (en) * 1992-07-23 1992-09-09 Philips Electronics Uk Ltd A semiconductor component

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155953A (ja) * 1983-02-24 1984-09-05 Mitsubishi Electric Corp ラツチアツプ防止回路
JPS59231850A (ja) * 1983-06-14 1984-12-26 Mitsubishi Electric Corp 相補形ｍｏｓ半導体集積回路装置

Also Published As

Publication number Publication date
JPS6059770A (ja) 1985-04-06

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