JPH02862B2 - - Google Patents
Info
- Publication number
- JPH02862B2 JPH02862B2 JP56062229A JP6222981A JPH02862B2 JP H02862 B2 JPH02862 B2 JP H02862B2 JP 56062229 A JP56062229 A JP 56062229A JP 6222981 A JP6222981 A JP 6222981A JP H02862 B2 JPH02862 B2 JP H02862B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- region
- drain
- transistors
- channel transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 238000009792 diffusion process Methods 0.000 description 26
- 239000000758 substrate Substances 0.000 description 8
- 230000010354 integration Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56062229A JPS57177553A (en) | 1981-04-24 | 1981-04-24 | Semiconductor |
| US06/354,034 US4523216A (en) | 1981-04-24 | 1982-03-02 | CMOS device with high density wiring layout |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56062229A JPS57177553A (en) | 1981-04-24 | 1981-04-24 | Semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57177553A JPS57177553A (en) | 1982-11-01 |
| JPH02862B2 true JPH02862B2 (US07652168-20100126-C00068.png) | 1990-01-09 |
Family
ID=13194115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56062229A Granted JPS57177553A (en) | 1981-04-24 | 1981-04-24 | Semiconductor |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4523216A (US07652168-20100126-C00068.png) |
| JP (1) | JPS57177553A (US07652168-20100126-C00068.png) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4570176A (en) * | 1984-04-16 | 1986-02-11 | At&T Bell Laboratories | CMOS Cell array with transistor isolation |
| EP0166027B1 (de) * | 1984-06-19 | 1990-06-13 | Siemens Aktiengesellschaft | In C-MOS-Technik realisierte Basiszelle |
| JPS6450443A (en) * | 1987-08-20 | 1989-02-27 | Toshiba Corp | Semiconductor device |
| US5084404A (en) * | 1988-03-31 | 1992-01-28 | Advanced Micro Devices | Gate array structure and process to allow optioning at second metal mask only |
| WO1989009492A1 (en) * | 1988-03-31 | 1989-10-05 | Advanced Micro Devices, Inc. | Gate array structure and process to allow optioning at second metal mask only |
| JPH0244753A (ja) * | 1988-08-05 | 1990-02-14 | Toshiba Corp | 半導体装置の製造方法 |
| US5243219A (en) * | 1990-07-05 | 1993-09-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having impurity diffusion region formed in substrate beneath interlayer contact hole |
| US9680473B1 (en) | 2016-02-18 | 2017-06-13 | International Business Machines Corporation | Ultra dense vertical transport FET circuits |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3877051A (en) * | 1972-10-18 | 1975-04-08 | Ibm | Multilayer insulation integrated circuit structure |
| US4163242A (en) * | 1972-11-13 | 1979-07-31 | Siemens Aktiengesellschaft | MOS storage integrated circuit using individual FET elements |
| JPS5714026B2 (US07652168-20100126-C00068.png) * | 1973-08-09 | 1982-03-20 | ||
| JPS5925381B2 (ja) * | 1977-12-30 | 1984-06-16 | 富士通株式会社 | 半導体集積回路装置 |
| JPS5519857A (en) * | 1978-07-28 | 1980-02-12 | Nec Corp | Semiconductor |
| JPS5567993A (en) * | 1978-11-14 | 1980-05-22 | Fujitsu Ltd | Semiconductor memory unit |
| JPS55132055A (en) * | 1979-03-30 | 1980-10-14 | Nec Corp | Mos integrated circuit |
| US4356504A (en) * | 1980-03-28 | 1982-10-26 | International Microcircuits, Inc. | MOS Integrated circuit structure for discretionary interconnection |
| US4392150A (en) * | 1980-10-27 | 1983-07-05 | National Semiconductor Corporation | MOS Integrated circuit having refractory metal or metal silicide interconnect layer |
-
1981
- 1981-04-24 JP JP56062229A patent/JPS57177553A/ja active Granted
-
1982
- 1982-03-02 US US06/354,034 patent/US4523216A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57177553A (en) | 1982-11-01 |
| US4523216A (en) | 1985-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5814844A (en) | Gate array having highly flexible interconnection structure | |
| JPH0527267B2 (US07652168-20100126-C00068.png) | ||
| JPH02862B2 (US07652168-20100126-C00068.png) | ||
| JPH1084083A (ja) | 静電気保護回路を備えた半導体装置 | |
| JPS6234150B2 (US07652168-20100126-C00068.png) | ||
| US5643832A (en) | Semiconductor device and method for fabrication thereof | |
| US4570175A (en) | Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations | |
| US4961101A (en) | Semiconductor MOSFET device with offset regions | |
| JP2753301B2 (ja) | 半導体集積回路装置 | |
| JPS60200541A (ja) | 半導体装置 | |
| JPH09167838A (ja) | 半導体装置及びその製造方法 | |
| JPH0287568A (ja) | 半導体装置の製造方法 | |
| JPH0255953B2 (US07652168-20100126-C00068.png) | ||
| JPH0122736B2 (US07652168-20100126-C00068.png) | ||
| JP2993041B2 (ja) | 相補型ｍｏｓ半導体装置 | |
| JPS61120459A (ja) | 半導体集積回路装置の製造方法 | |
| JP2517452B2 (ja) | 半導体装置 | |
| JP2702427B2 (ja) | 半導体集積回路装置およびその製造方法 | |
| JPH0247849A (ja) | 半導体装置 | |
| US6043546A (en) | Planar channel-type MOS transistor | |
| JPH10135355A (ja) | 半導体記憶装置及びその製造方法 | |
| JPS61114552A (ja) | 半導体装置 | |
| JPH077141A (ja) | サリサイドパワー分布を有するベーシックゲートアレイセル | |
| JPS6370542A (ja) | 半導体集積回路装置 | |
| JPS5999759A (ja) | 集積回路装置の製造方法 |
