JPH0262944B2 - - Google Patents
Info
- Publication number
- JPH0262944B2 JPH0262944B2 JP24602385A JP24602385A JPH0262944B2 JP H0262944 B2 JPH0262944 B2 JP H0262944B2 JP 24602385 A JP24602385 A JP 24602385A JP 24602385 A JP24602385 A JP 24602385A JP H0262944 B2 JPH0262944 B2 JP H0262944B2
- Authority
- JP
- Japan
- Prior art keywords
- groove
- forming
- insulating film
- glass
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011521 glass Substances 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 23
- 239000011247 coating layer Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000013508 migration Methods 0.000 claims 1
- 230000005012 migration Effects 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 239000000843 powder Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 7
- 238000001962 electrophoresis Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000003550 marker Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XWROUVVQGRRRMF-UHFFFAOYSA-N F.O[N+]([O-])=O Chemical compound F.O[N+]([O-])=O XWROUVVQGRRRMF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24602385A JPS62105427A (ja) | 1985-11-01 | 1985-11-01 | ガラス被覆半導体チツプの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24602385A JPS62105427A (ja) | 1985-11-01 | 1985-11-01 | ガラス被覆半導体チツプの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62105427A JPS62105427A (ja) | 1987-05-15 |
JPH0262944B2 true JPH0262944B2 (enrdf_load_html_response) | 1990-12-27 |
Family
ID=17142295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24602385A Granted JPS62105427A (ja) | 1985-11-01 | 1985-11-01 | ガラス被覆半導体チツプの製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62105427A (enrdf_load_html_response) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01287229A (ja) * | 1988-05-12 | 1989-11-17 | Tanaka Kikinzoku Kogyo Kk | 貴金属の回収方法 |
-
1985
- 1985-11-01 JP JP24602385A patent/JPS62105427A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS62105427A (ja) | 1987-05-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4179794A (en) | Process of manufacturing semiconductor devices | |
US4899199A (en) | Schottky diode with titanium or like layer contacting the dielectric layer | |
JPH0222869A (ja) | 対称阻止高降伏電圧半導体デバイスとその製造方法 | |
US3913217A (en) | Method of producing a semiconductor device | |
EP0046316B1 (en) | Semiconductor devices and their manufacture | |
JPH0728044B2 (ja) | ガラス被覆半導体チツプの製造方法 | |
JPS582076A (ja) | シヨツトキダイオ−ドの製造方法 | |
JP2000294805A (ja) | ショットキバリアダイオード及びその製造方法 | |
JPH0262944B2 (enrdf_load_html_response) | ||
JPS584815B2 (ja) | 半導体装置の製造方法 | |
US4220963A (en) | Fast recovery diode with very thin base | |
US4320571A (en) | Stencil mask process for high power, high speed controlled rectifiers | |
JPH0249732Y2 (enrdf_load_html_response) | ||
JPS63313859A (ja) | メサ型半導体装置及びその製造方法 | |
JPS5851413B2 (ja) | ハンドウタイソウチノ セイゾウホウホウ | |
JPH03165541A (ja) | 半導体装置の製造方法 | |
JPS5836495B2 (ja) | 半導体装置の製造方法 | |
JPS6260234A (ja) | 半導体ダイオ−ド素子の製造方法 | |
JPH03245536A (ja) | 半導体装置の製造方法 | |
JPS61240679A (ja) | シヨツトキ−バリヤ型半導体装置およびその製造方法 | |
JPS59150471A (ja) | 半導体装置 | |
JPH0638510B2 (ja) | ダイオ−ドアレイの製造方法 | |
JPS59100563A (ja) | メサ型半導体装置の製造方法 | |
JPS5951150B2 (ja) | 逆メサ型半導体装置の製法 | |
JPH06151884A (ja) | 半導体装置とその製造方法 |