JPH0260077B2 - - Google Patents

Info

Publication number
JPH0260077B2
JPH0260077B2 JP18348284A JP18348284A JPH0260077B2 JP H0260077 B2 JPH0260077 B2 JP H0260077B2 JP 18348284 A JP18348284 A JP 18348284A JP 18348284 A JP18348284 A JP 18348284A JP H0260077 B2 JPH0260077 B2 JP H0260077B2
Authority
JP
Japan
Prior art keywords
layer
algaas
cladding layer
protrusion
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP18348284A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6161484A (ja
Inventor
Akira Watanabe
Hideaki Horikawa
Tomoyuki Yamada
Koichi Imanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP59183482A priority Critical patent/JPS6161484A/ja
Publication of JPS6161484A publication Critical patent/JPS6161484A/ja
Publication of JPH0260077B2 publication Critical patent/JPH0260077B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP59183482A 1984-09-01 1984-09-01 発光素子の製造方法 Granted JPS6161484A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59183482A JPS6161484A (ja) 1984-09-01 1984-09-01 発光素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59183482A JPS6161484A (ja) 1984-09-01 1984-09-01 発光素子の製造方法

Publications (2)

Publication Number Publication Date
JPS6161484A JPS6161484A (ja) 1986-03-29
JPH0260077B2 true JPH0260077B2 (de) 1990-12-14

Family

ID=16136580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59183482A Granted JPS6161484A (ja) 1984-09-01 1984-09-01 発光素子の製造方法

Country Status (1)

Country Link
JP (1) JPS6161484A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6797388B1 (en) * 1999-03-18 2004-09-28 Ppg Industries Ohio, Inc. Methods of making low haze coatings and the coatings and coated articles made thereby

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5830186A (ja) * 1981-08-18 1983-02-22 Toshiba Corp 光半導体素子及びその製造方法
JPS5861695A (ja) * 1981-10-09 1983-04-12 Hitachi Ltd 半導体レ−ザ素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5830186A (ja) * 1981-08-18 1983-02-22 Toshiba Corp 光半導体素子及びその製造方法
JPS5861695A (ja) * 1981-10-09 1983-04-12 Hitachi Ltd 半導体レ−ザ素子

Also Published As

Publication number Publication date
JPS6161484A (ja) 1986-03-29

Similar Documents

Publication Publication Date Title
JPH0118590B2 (de)
JP3510305B2 (ja) 半導体レーザの製造方法,及び半導体レーザ
JPH0722214B2 (ja) 半導体レーザ素子の製造方法
JPH02288288A (ja) 埋め込みヘテロ構造レーザダイオードの製造方法
JPH01220492A (ja) 半導体レーザ装置及びその製造方法
JP2001057459A (ja) 半導体レーザ
JPH0376288A (ja) 埋め込み型半導体レーザ
JPH0260077B2 (de)
JP2629678B2 (ja) 半導体レーザ装置およびその製造方法
US5490159A (en) Visible light semiconductor laser
JPS589592B2 (ja) 半導体発光装置の製造方法
JPS5925399B2 (ja) 半導体レ−ザの製造方法
JPH07235725A (ja) 半導体レーザ素子およびその製造方法
JPH037153B2 (de)
JP2973215B2 (ja) 半導体レーザ装置
JPH0260075B2 (de)
US4358850A (en) Terraced substrate semiconductor laser
JPH0513885A (ja) 可視光半導体レーザの製造方法
JPH0680868B2 (ja) 半導体レーザ素子
JP3034177B2 (ja) 半導体レーザ素子およびその製造方法
JPH0590706A (ja) 半導体レーザ素子
JPS5914912B2 (ja) 半導体レ−ザの製造方法
JPH0213834B2 (de)
JPH0680869B2 (ja) 半導体レーザ素子
JPH04171782A (ja) 化合物半導体レーザ